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NP109N04PUK-VB Product details
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1. NP109N04PUK-VB Product Introduction
NP109N04PUK-VB is a **high current, high efficiency N-channel power MOSFET**, using **TO263 package**, designed for applications requiring high performance and low conduction loss. The **drain-source voltage (VDS)** of this device is **40V**, which can work stably in medium and low voltage power supply systems. **The gate-source voltage (VGS)** is **±20V**, which has a wide range of drive compatibility. Its **turn-on threshold voltage (Vth)** is **3V**, which can reliably conduct under a variety of drive voltages. NP109N04PUK-VB has **very low on-resistance (RDS(ON))**, which is 2.5mΩ** at **VGS=4.5V** and only 2mΩ** at **VGS=10V**, which significantly reduces conduction loss. The maximum drain current (ID) can reach 150A, providing strong support for high-power loads. Based on Trench technology, this MOSFET has excellent switching speed and energy efficiency, and is widely used in power management, automotive electronics, industrial control and other fields.
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NP109N04PUK-VB is a **high current, high efficiency N-channel power MOSFET**, using **TO263 package**, designed for applications requiring high performance and low conduction loss. The **drain-source voltage (VDS)** of this device is **40V**, which can work stably in medium and low voltage power supply systems. **The gate-source voltage (VGS)** is **±20V**, which has a wide range of drive compatibility. Its **turn-on threshold voltage (Vth)** is **3V**, which can reliably conduct under a variety of drive voltages. NP109N04PUK-VB has **very low on-resistance (RDS(ON))**, which is 2.5mΩ** at **VGS=4.5V** and only 2mΩ** at **VGS=10V**, which significantly reduces conduction loss. The maximum drain current (ID) can reach 150A, providing strong support for high-power loads. Based on Trench technology, this MOSFET has excellent switching speed and energy efficiency, and is widely used in power management, automotive electronics, industrial control and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. Detailed parameter description
| **Parameter name** | **Parameter value** | **Description** |
|-----------------------|--------------------------|----------------------------------|
| **Package type** | TO263 | Compact package suitable for surface mounting|
| **Configuration** | Single N-channel | Unipolar design for forward conduction|
| **Drain-source voltage (VDS)** | 40V | Suitable for medium and low voltage circuits and power systems|
| **Gate-source voltage (VGS)** | ±20V | Provides a wide range of driving voltages|
| **Turn-on threshold voltage (Vth)** | 3V | Reliably conducts at voltages above 3V|
| **On-resistance (RDS(ON))** | 2.5mΩ @ VGS=4.5V | Resistance value at lower gate voltage|
| **On-resistance (RDS(ON))** | 2mΩ @ VGS=10V | Resistance value at higher gate voltage|
| **Drain current (ID)** | 150A | Supports high current load|
| **Process technology** | Trench | Provides low loss and fast switching characteristics|
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| **Parameter name** | **Parameter value** | **Description** |
|-----------------------|--------------------------|----------------------------------|
| **Package type** | TO263 | Compact package suitable for surface mounting|
| **Configuration** | Single N-channel | Unipolar design for forward conduction|
| **Drain-source voltage (VDS)** | 40V | Suitable for medium and low voltage circuits and power systems|
| **Gate-source voltage (VGS)** | ±20V | Provides a wide range of driving voltages|
| **Turn-on threshold voltage (Vth)** | 3V | Reliably conducts at voltages above 3V|
| **On-resistance (RDS(ON))** | 2.5mΩ @ VGS=4.5V | Resistance value at lower gate voltage|
| **On-resistance (RDS(ON))** | 2mΩ @ VGS=10V | Resistance value at higher gate voltage|
| **Drain current (ID)** | 150A | Supports high current load|
| **Process technology** | Trench | Provides low loss and fast switching characteristics|
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Domain and module applications：
III. Application fields and module examples
1. **Electric vehicle battery management system (BMS)**
NP109N04PUK-VB is ideal for battery management systems in **Electric Vehicles (EV)**. Its high current capability and low conduction loss help improve battery charging and discharging efficiency and support longer battery life.
2. **Motor Driver and Power Switch Module**
This MOSFET can be used in a variety of motor drivers, especially **DC motor and brushless motor control**. Its high current capacity enables it to perform well during motor starting and high-load operation, and its low RDS(ON) reduces heat dissipation.
3. **Server and Data Center Power Systems**
In power management modules in **servers and data centers**, NP109N04PUK-VB can reduce power loss, improve system energy efficiency, and support higher workloads.
4. **Industrial Automation Equipment**
This MOSFET is widely used in **automation control systems**, such as PLC controllers and intelligent sensor devices. Its efficient switching characteristics ensure the timeliness and stability of system response.
5. **Solar Inverter and Energy Storage System**
In **solar inverter and energy storage module**, this device can be used for power conversion and battery energy storage management to ensure efficient operation of the system under different working conditions.
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1. **Electric vehicle battery management system (BMS)**
NP109N04PUK-VB is ideal for battery management systems in **Electric Vehicles (EV)**. Its high current capability and low conduction loss help improve battery charging and discharging efficiency and support longer battery life.
2. **Motor Driver and Power Switch Module**
This MOSFET can be used in a variety of motor drivers, especially **DC motor and brushless motor control**. Its high current capacity enables it to perform well during motor starting and high-load operation, and its low RDS(ON) reduces heat dissipation.
3. **Server and Data Center Power Systems**
In power management modules in **servers and data centers**, NP109N04PUK-VB can reduce power loss, improve system energy efficiency, and support higher workloads.
4. **Industrial Automation Equipment**
This MOSFET is widely used in **automation control systems**, such as PLC controllers and intelligent sensor devices. Its efficient switching characteristics ensure the timeliness and stability of system response.
5. **Solar Inverter and Energy Storage System**
In **solar inverter and energy storage module**, this device can be used for power conversion and battery energy storage management to ensure efficient operation of the system under different working conditions.
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* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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