中文
English
NP109N04PUJ-E2B-AY-VB Product details
Back to previous pageProduct introduction：
NP109N04PUJ-E2B-AY-VB Product Introduction
NP109N04PUJ-E2B-AY-VB is a high-efficiency single N-channel MOSFET in a TO263 package, designed for high current, high power applications. With a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, the device is able to withstand high voltage stress. Its threshold voltage (Vth) is 3V, which ensures precise switching control at higher gate voltages. The low on-resistance (RDS(ON)) of this MOSFET is 2.5mΩ at a VGS of 4.5V, dropping to 2mΩ at a VGS of 10V, ensuring low loss and low heat generation under high current conditions. With a maximum drain current (ID) of up to 150A, the device is particularly suitable for systems that need to handle high currents.
---
NP109N04PUJ-E2B-AY-VB is a high-efficiency single N-channel MOSFET in a TO263 package, designed for high current, high power applications. With a drain-source voltage (VDS) of 40V and a gate-source voltage (VGS) of ±20V, the device is able to withstand high voltage stress. Its threshold voltage (Vth) is 3V, which ensures precise switching control at higher gate voltages. The low on-resistance (RDS(ON)) of this MOSFET is 2.5mΩ at a VGS of 4.5V, dropping to 2mΩ at a VGS of 10V, ensuring low loss and low heat generation under high current conditions. With a maximum drain current (ID) of up to 150A, the device is particularly suitable for systems that need to handle high currents.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
NP109N04PUJ-E2B-AY-VB Detailed parameter description
| Parameter| Value|
|--------------------|-----------------------------|
| **Model** | NP109N04PUJ-E2B-AY-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 40V |
| **Gate-source voltage (VGS)** | 20（±V） |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 2.5mΩ @ VGS=4.5V
2mΩ @ VGS=10V |
| **Drain current (ID)** | 150A |
| **Technology** | Trench |
---
| Parameter| Value|
|--------------------|-----------------------------|
| **Model** | NP109N04PUJ-E2B-AY-VB |
| **Package** | TO263 |
| **Configuration** | Single N-channel|
| **Drain-source voltage (VDS)** | 40V |
| **Gate-source voltage (VGS)** | 20（±V） |
| **Threshold voltage (Vth)** | 3V |
| **On-resistance (RDS(ON))** | 2.5mΩ @ VGS=4.5V
2mΩ @ VGS=10V |
| **Drain current (ID)** | 150A |
| **Technology** | Trench |
---
Domain and module applications：
Applications and modules
**NP109N04PUJ-E2B-AY-VB** is suitable for multiple applications and modules that require high current and low loss:
1. **Electric Vehicles and Battery Management Systems (BMS)**
In the power circuit of electric vehicles, this MOSFET can be used to control the charge and discharge management of the battery. Due to its low on-resistance and high current capability, it helps to improve the energy efficiency of the battery system and extend the driving range.
2. **Server Power and Data Center Equipment**
In the power modules of data centers, NP109N04PUJ-E2B-AY-VB is suitable for DC-DC converter and load switch applications, ensuring that the equipment can operate efficiently when handling large current loads and reducing heat dissipation pressure.
3. **Industrial Automation and Motor Drive**
This MOSFET can be used in industrial motor drive modules to achieve efficient current transmission, especially suitable for industrial automation systems that require fast response, such as robots and smart manufacturing equipment.
4. **High-power LED lighting system**
In high-power LED drive circuits, this device can be used as the main switch element to ensure efficient driving and heat control of lamps, thereby improving the stability of the light source.
5. **Power tools and consumer electronics**
NP109N04PUJ-E2B-AY-VB is suitable for power control modules in high-current power tools and high-performance consumer electronic devices to ensure maximum battery life and improved device performance.
The high current carrying capacity and low loss characteristics of this MOSFET make it an important choice for modern electronic systems that pursue high efficiency and reliability.
**NP109N04PUJ-E2B-AY-VB** is suitable for multiple applications and modules that require high current and low loss:
1. **Electric Vehicles and Battery Management Systems (BMS)**
In the power circuit of electric vehicles, this MOSFET can be used to control the charge and discharge management of the battery. Due to its low on-resistance and high current capability, it helps to improve the energy efficiency of the battery system and extend the driving range.
2. **Server Power and Data Center Equipment**
In the power modules of data centers, NP109N04PUJ-E2B-AY-VB is suitable for DC-DC converter and load switch applications, ensuring that the equipment can operate efficiently when handling large current loads and reducing heat dissipation pressure.
3. **Industrial Automation and Motor Drive**
This MOSFET can be used in industrial motor drive modules to achieve efficient current transmission, especially suitable for industrial automation systems that require fast response, such as robots and smart manufacturing equipment.
4. **High-power LED lighting system**
In high-power LED drive circuits, this device can be used as the main switch element to ensure efficient driving and heat control of lamps, thereby improving the stability of the light source.
5. **Power tools and consumer electronics**
NP109N04PUJ-E2B-AY-VB is suitable for power control modules in high-current power tools and high-performance consumer electronic devices to ensure maximum battery life and improved device performance.
The high current carrying capacity and low loss characteristics of this MOSFET make it an important choice for modern electronic systems that pursue high efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
