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NP109N04PUJ-E1B-AY-VB Product details
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1. NP109N04PUJ-E1B-AY-VB Product Introduction
NP109N04PUJ-E1B-AY-VB is a high-efficiency **N-channel** power MOSFET, using **TO263** package, designed for high current and high efficiency applications. Its **drain-source voltage (VDS)** is as high as **40V**, and the maximum gate-source voltage (**VGS**) can reach ±20V, suitable for a variety of power management and switching applications. Its **turn-on voltage (Vth)** is **3V**, which can be turned on quickly at a lower gate voltage. The **on-resistance (RDS(ON))** of this MOSFET is only **2mΩ** at **VGS=10V**, showing excellent conductivity and can effectively reduce energy loss. Using **trench technology (Trench Technology)**, the device not only has excellent conductivity, but also has good thermal management performance, suitable for high power density applications.
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NP109N04PUJ-E1B-AY-VB is a high-efficiency **N-channel** power MOSFET, using **TO263** package, designed for high current and high efficiency applications. Its **drain-source voltage (VDS)** is as high as **40V**, and the maximum gate-source voltage (**VGS**) can reach ±20V, suitable for a variety of power management and switching applications. Its **turn-on voltage (Vth)** is **3V**, which can be turned on quickly at a lower gate voltage. The **on-resistance (RDS(ON))** of this MOSFET is only **2mΩ** at **VGS=10V**, showing excellent conductivity and can effectively reduce energy loss. Using **trench technology (Trench Technology)**, the device not only has excellent conductivity, but also has good thermal management performance, suitable for high power density applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. NP109N04PUJ-E1B-AY-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------|-------------------------------------------------------|
| **Package** | TO263 | Compact TO263 package, suitable for applications with high heat dissipation requirements and limited space. |
| **Configuration** | Single-N-Channel | Single N-type MOSFET, suitable for a variety of power management and switching applications. |
| **Drain-Source Voltage (VDS)** | 40V | Maximum drain-source voltage, supports a variety of power management and load control. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate-source voltage range, supports higher gate voltage input. |
| **Turning point voltage (Vth)** | 3V | Gate voltage threshold, quickly turn on at a lower voltage, suitable for low voltage applications. |
| **On-resistance (RDS(ON))** | 2mΩ @ VGS=10V | On-resistance at 10V gate voltage, suitable for high load current applications. |
| **Drain current (ID)** | 150A | Maximum continuous drain current, supporting high power output. |
| **Technology** | Trench | Trench technology, providing low conduction loss and higher efficiency. |
| **Operating temperature range** | -55°C ~ +150°C | Wide operating temperature range, suitable for a variety of application scenarios. |
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| **Parameter** | **Value** | **Description** |
|-----------------------|--------------------------|-------------------------------------------------------|
| **Package** | TO263 | Compact TO263 package, suitable for applications with high heat dissipation requirements and limited space. |
| **Configuration** | Single-N-Channel | Single N-type MOSFET, suitable for a variety of power management and switching applications. |
| **Drain-Source Voltage (VDS)** | 40V | Maximum drain-source voltage, supports a variety of power management and load control. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate-source voltage range, supports higher gate voltage input. |
| **Turning point voltage (Vth)** | 3V | Gate voltage threshold, quickly turn on at a lower voltage, suitable for low voltage applications. |
| **On-resistance (RDS(ON))** | 2mΩ @ VGS=10V | On-resistance at 10V gate voltage, suitable for high load current applications. |
| **Drain current (ID)** | 150A | Maximum continuous drain current, supporting high power output. |
| **Technology** | Trench | Trench technology, providing low conduction loss and higher efficiency. |
| **Operating temperature range** | -55°C ~ +150°C | Wide operating temperature range, suitable for a variety of application scenarios. |
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Domain and module applications：
3. Application fields and module examples
1. **Power Management**
NP109N04PUJ-E1B-AY-VB is suitable for efficient power management solutions such as switching power supplies and DC-DC converters.
**Example:** In power adapters, this MOSFET can be used as a main switch to achieve efficient energy conversion and reduce energy loss.
2. **Motor Driving**
This MOSFET can effectively control the motor in the motor driving circuit and provide efficient power output.
**Example:** In electric vehicles and industrial automation equipment, NP109N04PUJ-E1B-AY-VB can be used to control DC motors for fast and precise motion control.
3. **Load Switching**
NP109N04PUJ-E1B-AY-VB is suitable as a load switch to reliably switch power and load in power management systems.
**Example:** In consumer electronics, this MOSFET can be used to switch different power paths to optimize energy utilization.
4. **LED Driving**
This MOSFET can be used in LED driving circuits to provide brightness adjustment and efficient switch control.
**Example:** In lighting applications, NP109N04PUJ-E1B-AY-VB can achieve LED dimming function to improve user experience.
5. **Signal Switching**
NP109N04PUJ-E1B-AY-VB is suitable for signal switching and can perform well in low voltage and high frequency signal transmission.
**Example:** In audio equipment, this MOSFET can be used to select different sound sources to ensure the quality and stability of signal transmission.
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NP109N04PUJ-E1B-AY-VB is an excellent N-channel power MOSFET with high performance and high reliability. It is widely used in power management, motor drive and LED drive to meet the needs of modern electronic devices for high performance and low power consumption.
1. **Power Management**
NP109N04PUJ-E1B-AY-VB is suitable for efficient power management solutions such as switching power supplies and DC-DC converters.
**Example:** In power adapters, this MOSFET can be used as a main switch to achieve efficient energy conversion and reduce energy loss.
2. **Motor Driving**
This MOSFET can effectively control the motor in the motor driving circuit and provide efficient power output.
**Example:** In electric vehicles and industrial automation equipment, NP109N04PUJ-E1B-AY-VB can be used to control DC motors for fast and precise motion control.
3. **Load Switching**
NP109N04PUJ-E1B-AY-VB is suitable as a load switch to reliably switch power and load in power management systems.
**Example:** In consumer electronics, this MOSFET can be used to switch different power paths to optimize energy utilization.
4. **LED Driving**
This MOSFET can be used in LED driving circuits to provide brightness adjustment and efficient switch control.
**Example:** In lighting applications, NP109N04PUJ-E1B-AY-VB can achieve LED dimming function to improve user experience.
5. **Signal Switching**
NP109N04PUJ-E1B-AY-VB is suitable for signal switching and can perform well in low voltage and high frequency signal transmission.
**Example:** In audio equipment, this MOSFET can be used to select different sound sources to ensure the quality and stability of signal transmission.
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NP109N04PUJ-E1B-AY-VB is an excellent N-channel power MOSFET with high performance and high reliability. It is widely used in power management, motor drive and LED drive to meet the needs of modern electronic devices for high performance and low power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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