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NP100P04PDG-VB Product details
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1. NP100P04PDG-VB Product Introduction
NP100P04PDG-VB is a high-performance **single P-channel MOSFET**, using **TO263 package**, designed for high current and high efficiency applications. Its maximum drain-source voltage (VDS) is **-40V**, suitable for working in negative voltage environment. The gate-source voltage (VGS) can reach **±20V**, ensuring the safe operation of MOSFET under different voltage conditions. The turn-on voltage (Vth) of the device is **-2.5V**, enabling it to turn on quickly at a lower driving voltage. Its on-resistance (RDS(ON)) is **8.28mΩ** (at VGS = 4.5V) and **4.1mΩ** (at VGS = 10V), allowing it to maintain low power consumption under high current conditions. The maximum drain current (ID) reaches **-110A**, meeting high load current requirements. Based on the **Trench process** design, this MOSFET provides excellent switching characteristics and thermal performance, and is very suitable for various high-power applications.
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NP100P04PDG-VB is a high-performance **single P-channel MOSFET**, using **TO263 package**, designed for high current and high efficiency applications. Its maximum drain-source voltage (VDS) is **-40V**, suitable for working in negative voltage environment. The gate-source voltage (VGS) can reach **±20V**, ensuring the safe operation of MOSFET under different voltage conditions. The turn-on voltage (Vth) of the device is **-2.5V**, enabling it to turn on quickly at a lower driving voltage. Its on-resistance (RDS(ON)) is **8.28mΩ** (at VGS = 4.5V) and **4.1mΩ** (at VGS = 10V), allowing it to maintain low power consumption under high current conditions. The maximum drain current (ID) reaches **-110A**, meeting high load current requirements. Based on the **Trench process** design, this MOSFET provides excellent switching characteristics and thermal performance, and is very suitable for various high-power applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | 4.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -40V | -2.5V | -110A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
2. NP100P04PDG-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-----------------------|------------------------|------------------------------------------|
| **Package type** | TO263 | Suitable for high power applications, with good heat dissipation performance. |
| **MOSFET configuration** | Single P channel | Suitable for load control, providing better current management capabilities. |
| **Drain-source voltage (VDS)** | -40V | Able to handle negative voltage, suitable for high voltage applications. |
| **Gate-source voltage (VGS)** | ±20V | Can operate in a wide voltage range to ensure flexibility. |
| **Turning voltage (Vth)** | -2.5V | Lower turning-on voltage, quick response to control signals. |
| **On-resistance (RDS(ON))** | 8.28mΩ @ VGS=4.5V | Low on-resistance, suitable for high current applications. |
| **On-resistance (RDS(ON))** | 4.1mΩ @ VGS=10V | Further reduces power consumption and improves system efficiency. |
| **Drain current (ID)** | -110A | Supports high load current and is suitable for heavy-load applications. |
| **Technology type** | Trench | Provides excellent switching characteristics and thermal performance. |
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| **Parameter** | **Value** | **Description** |
|-----------------------|------------------------|------------------------------------------|
| **Package type** | TO263 | Suitable for high power applications, with good heat dissipation performance. |
| **MOSFET configuration** | Single P channel | Suitable for load control, providing better current management capabilities. |
| **Drain-source voltage (VDS)** | -40V | Able to handle negative voltage, suitable for high voltage applications. |
| **Gate-source voltage (VGS)** | ±20V | Can operate in a wide voltage range to ensure flexibility. |
| **Turning voltage (Vth)** | -2.5V | Lower turning-on voltage, quick response to control signals. |
| **On-resistance (RDS(ON))** | 8.28mΩ @ VGS=4.5V | Low on-resistance, suitable for high current applications. |
| **On-resistance (RDS(ON))** | 4.1mΩ @ VGS=10V | Further reduces power consumption and improves system efficiency. |
| **Drain current (ID)** | -110A | Supports high load current and is suitable for heavy-load applications. |
| **Technology type** | Trench | Provides excellent switching characteristics and thermal performance. |
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Domain and module applications：
III. Applications and Module Examples
1. **Power Management**:
NP100P04PDG-VB is widely used in **DC-DC converters** and **switching power supplies**. Its high current handling capability and low on-resistance make it ideal for high-efficiency power conversion, and it performs well in power management systems that require high efficiency and low energy consumption.
2. **Motor Control**:
This MOSFET can be used in **motor drive** applications, especially in situations where high current motors are controlled. With a maximum drain current of **-110A**, it can effectively drive high-power motors, such as in power tools and home appliances.
3. **Inverters and Renewable Energy**:
NP100P04PDG-VB can also be used in **inverter** systems, such as solar inverters or wind power generation systems. Its high efficiency and stability are crucial in the field of renewable energy, and can effectively convert and control energy flow.
4. **Automotive electronics**:
In **automotive electronic equipment**, this MOSFET can be used for applications such as power distribution, load control and motor drive. Its excellent thermal performance and reliability ensure safe operation under extreme conditions, suitable for the needs of modern automotive electronic control systems.
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NP100P04PDG-VB is widely used in power management, motor control, inverters and automotive electronics with its excellent performance and high current capability, making it an ideal choice for high power applications.
1. **Power Management**:
NP100P04PDG-VB is widely used in **DC-DC converters** and **switching power supplies**. Its high current handling capability and low on-resistance make it ideal for high-efficiency power conversion, and it performs well in power management systems that require high efficiency and low energy consumption.
2. **Motor Control**:
This MOSFET can be used in **motor drive** applications, especially in situations where high current motors are controlled. With a maximum drain current of **-110A**, it can effectively drive high-power motors, such as in power tools and home appliances.
3. **Inverters and Renewable Energy**:
NP100P04PDG-VB can also be used in **inverter** systems, such as solar inverters or wind power generation systems. Its high efficiency and stability are crucial in the field of renewable energy, and can effectively convert and control energy flow.
4. **Automotive electronics**:
In **automotive electronic equipment**, this MOSFET can be used for applications such as power distribution, load control and motor drive. Its excellent thermal performance and reliability ensure safe operation under extreme conditions, suitable for the needs of modern automotive electronic control systems.
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NP100P04PDG-VB is widely used in power management, motor control, inverters and automotive electronics with its excellent performance and high current capability, making it an ideal choice for high power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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