NP100N04PUH-VB Product details
Product introduction:
NP100N04PUH-VB is a high-performance **N-channel MOSFET**, packaged in **TO263**, designed for high current and high efficiency applications. Its maximum drain-source voltage (VDS) is **40V**, the gate-source voltage (VGS) is up to **±20V**, and it has a **3V** turn-on threshold voltage (Vth). The product has an extremely low on-resistance (RDS(ON)), which is **2.5mΩ@VGS=4.5V** and **2mΩ@VGS=10V**, respectively, which enables it to perform well at a maximum drain current (ID) of **150A**. NP100N04PUH-VB uses **Trench technology**, which has lower switching losses in high-speed switching operations and is suitable for a variety of high-power applications.
---
File download
Download PDF document
Download now
Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter name** | **Specification** | **Description** |
|----------------------|------------------------------|----------------------------------------------|
| **Model** | NP100N04PUH-VB | |
| **Package type** | TO263 | Surface mount package suitable for high power and high current applications|
| **Configuration** | Single N-channel | Suitable for unidirectional current flow control|
| **Drain-source voltage (VDS)** | 40V | Maximum drain-source voltage|
| **Gate-source voltage (VGS)** | ±20V | Maximum gate voltage to ensure reliable driving of the device|
| **Turning-on threshold voltage (Vth)** | 3V | Minimum voltage required to turn on the N-channel|
| **On-resistance (RDS(ON))** | 2.5mΩ @ VGS=4.5V | VGS=4.5V |
| | 2mΩ @ VGS=10V | On-resistance at VGS=10V|
| **Drain current (ID)** | 150A | Maximum drain current|
| **Technology** | Trench | Improved conductivity and switching efficiency|
---
Domain and module applications:
1. **Power converter**:
NP100N04PUH-VB is very suitable for **high-efficiency DC-DC converter**, because of its low on-resistance and high drain current capability, it can effectively reduce energy loss during the conversion process, thereby improving the efficiency of the overall system. This makes it widely used in computer power supplies, industrial power supplies and power tools.
2. **Electric vehicle drive**:
This MOSFET can be used as a **motor drive** switch for **electric vehicles**, providing high current support to ensure efficient control of the motor during acceleration and deceleration. Due to its superior thermal performance and high voltage resistance, it can maintain reliability in harsh environments.
3. **LED lighting system**:
In **LED drive circuit**, NP100N04PUH-VB can be used to control the switching of LEDs, provide precise current regulation, ensure that LEDs operate in the best state, extend their service life, and support dimming function.
4. **UPS system**:
NP100N04PUH-VB is also used in **uninterruptible power supply (UPS)** system. As a high-voltage switching element, it effectively manages the power switching and battery charging process to ensure the stability and reliability of the system.
5. **High-frequency switching power supply**:
This MOSFET is suitable for the design of **high-frequency switching power supply**. Due to its low switching loss characteristics, it can increase the switching frequency of the system, reduce the power supply volume, and increase the power density. It is suitable for portable electronic devices and consumer products.
---
NP100N04PUH-VB is a high-current, high-efficiency N-channel MOSFET. With its excellent electrical performance and reasonable packaging design, it is suitable for various high-power applications and meets the stringent requirements of modern electronic devices for energy efficiency and space.
Technical support:
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
中文
English
Back to previous page
Click for larger image