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NP100N04PDH-VB Product details

Product introduction:

1. NP100N04PDH-VB Product Introduction
NP100N04PDH-VB is a high-efficiency **single N-channel MOSFET**, using **TO263 package**, designed for high current and high efficiency application scenarios. The device has a **maximum drain-source voltage (VDS)** of **40V**, and supports a maximum gate-source voltage (VGS) of **±20V**. Its turn-on voltage (Vth) is **3V**, and its on-resistance (RDS(ON)) is only **2mΩ** at **VGS=10V**, and **2.5mΩ** at **VGS=4.5V**, which makes it have extremely low power consumption when working at high current, and the maximum continuous current can reach **150A**. NP100N04PDH-VB is particularly suitable for power management, load switching, and high-efficiency conversion applications to ensure the overall performance and reliability of the system.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 40V 3V 150A 2mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 40V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. NP100N04PDH-VB Detailed Parameter Description
| **Parameter** | **Description** | **Value** |
|-------------------------|----------------------------------------|----------------------|
| **Package** | TO-263 | Optimized Heat Dissipation|
| **Configuration** | Single N-channel MOSFET | High-efficiency Design|
| **Drain-Source Voltage (VDS)** | Maximum Withstand Voltage| 40V |
| **Gate-Source Voltage (VGS)** | Gate Withstand Voltage| ±20V |
| **Through Voltage (Vth)** | Turn-On Voltage| 3V |
| **On-Resistance (RDS(ON))** | @ VGS = 4.5V | 2.5mΩ |
| | @ VGS = 10V | 2mΩ |
| **Maximum Drain Current (ID)** | Maximum Continuous Current| 150A |
| **Technology** | Trench Technology | Low power consumption, high efficiency |
| **Operating temperature range** | Operating temperature range | -55°C to 175°C |

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Domain and module applications:

3. Application fields and module examples

1. **Switching power supply**
NP100N04PDH-VB is widely used in **switching power supply** (SMPS). As a switching element, it can improve the conversion efficiency of the power supply, reduce energy loss, and keep the power supply stable under high load conditions.

2. **Electric vehicle drive**
In **electric vehicles**, NP100N04PDH-VB can be used in motor drive circuits to provide strong current carrying capacity and ensure efficient performance of the motor during starting and acceleration.

3. **LED lighting control**
This MOSFET is suitable for **LED drive** applications as a switching device to achieve efficient control of LEDs, provide stable brightness and extend the service life of LEDs.

4. **Battery Management System (BMS)**
NP100N04PDH-VB is also suitable for **Battery Management System**, which can achieve efficient control of the charging and discharging process, ensure that the battery operates within a safe range and optimize the charging efficiency.

5. **Industrial Power Equipment**
In **Industrial Power** and **Power Module**, NP100N04PDH-VB can be used as a switching device for high-power loads, supporting fast switching of high-current loads and improving system reliability and stability.

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With its excellent performance and high current capability, NP100N04PDH-VB has become an ideal choice for modern high-power electronic applications, especially in the field of power conversion and management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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