NP100N04PDH-VB Product details
Product introduction:
NP100N04PDH-VB is a high-efficiency **single N-channel MOSFET**, using **TO263 package**, designed for high current and high efficiency application scenarios. The device has a **maximum drain-source voltage (VDS)** of **40V**, and supports a maximum gate-source voltage (VGS) of **±20V**. Its turn-on voltage (Vth) is **3V**, and its on-resistance (RDS(ON)) is only **2mΩ** at **VGS=10V**, and **2.5mΩ** at **VGS=4.5V**, which makes it have extremely low power consumption when working at high current, and the maximum continuous current can reach **150A**. NP100N04PDH-VB is particularly suitable for power management, load switching, and high-efficiency conversion applications to ensure the overall performance and reliability of the system.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | 2mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 40V | 3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| **Parameter** | **Description** | **Value** |
|-------------------------|----------------------------------------|----------------------|
| **Package** | TO-263 | Optimized Heat Dissipation|
| **Configuration** | Single N-channel MOSFET | High-efficiency Design|
| **Drain-Source Voltage (VDS)** | Maximum Withstand Voltage| 40V |
| **Gate-Source Voltage (VGS)** | Gate Withstand Voltage| ±20V |
| **Through Voltage (Vth)** | Turn-On Voltage| 3V |
| **On-Resistance (RDS(ON))** | @ VGS = 4.5V | 2.5mΩ |
| | @ VGS = 10V | 2mΩ |
| **Maximum Drain Current (ID)** | Maximum Continuous Current| 150A |
| **Technology** | Trench Technology | Low power consumption, high efficiency |
| **Operating temperature range** | Operating temperature range | -55°C to 175°C |
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Domain and module applications:
1. **Switching power supply**
NP100N04PDH-VB is widely used in **switching power supply** (SMPS). As a switching element, it can improve the conversion efficiency of the power supply, reduce energy loss, and keep the power supply stable under high load conditions.
2. **Electric vehicle drive**
In **electric vehicles**, NP100N04PDH-VB can be used in motor drive circuits to provide strong current carrying capacity and ensure efficient performance of the motor during starting and acceleration.
3. **LED lighting control**
This MOSFET is suitable for **LED drive** applications as a switching device to achieve efficient control of LEDs, provide stable brightness and extend the service life of LEDs.
4. **Battery Management System (BMS)**
NP100N04PDH-VB is also suitable for **Battery Management System**, which can achieve efficient control of the charging and discharging process, ensure that the battery operates within a safe range and optimize the charging efficiency.
5. **Industrial Power Equipment**
In **Industrial Power** and **Power Module**, NP100N04PDH-VB can be used as a switching device for high-power loads, supporting fast switching of high-current loads and improving system reliability and stability.
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With its excellent performance and high current capability, NP100N04PDH-VB has become an ideal choice for modern high-power electronic applications, especially in the field of power conversion and management.
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