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NIF62514T3G-VB Product details
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1. NIF62514T3G-VB Product Introduction
NIF62514T3G-VB is a high-performance **N-channel** power MOSFET in **SOT223** package, designed for power management and switching applications. The device has a **drain-source voltage (VDS)** of up to **60V**, which can meet a variety of power supply requirements. Its **gate voltage (VGS)** range is ±20V, ensuring stability under different operating conditions. **The **turn-on voltage (Vth)** is **1.7V**, which enables the MOSFET to achieve fast turn-on at a lower gate voltage and reduce switching losses. Under different gate voltages, the **on-resistance (RDS(ON))** is **85mΩ** (at **VGS=4.5V**) and **76mΩ** (at **VGS=10V**), respectively, which makes it perform well in high-load applications and reduces the overall power consumption of the system. NIF62514T3G-VB adopts **Trench Technology**, which improves the conduction efficiency and heat dissipation performance, and is suitable for various electronic devices and circuit modules.
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NIF62514T3G-VB is a high-performance **N-channel** power MOSFET in **SOT223** package, designed for power management and switching applications. The device has a **drain-source voltage (VDS)** of up to **60V**, which can meet a variety of power supply requirements. Its **gate voltage (VGS)** range is ±20V, ensuring stability under different operating conditions. **The **turn-on voltage (Vth)** is **1.7V**, which enables the MOSFET to achieve fast turn-on at a lower gate voltage and reduce switching losses. Under different gate voltages, the **on-resistance (RDS(ON))** is **85mΩ** (at **VGS=4.5V**) and **76mΩ** (at **VGS=10V**), respectively, which makes it perform well in high-load applications and reduces the overall power consumption of the system. NIF62514T3G-VB adopts **Trench Technology**, which improves the conduction efficiency and heat dissipation performance, and is suitable for various electronic devices and circuit modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
II. NIF62514T3G-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|----------------------|--------------------------|------------------------------------------------------|
| **Package** | SOT223 | Small SOT223 package, suitable for high-density circuit board design. |
| **Configuration** | Single-N-Channel | Single N-type MOSFET, suitable for efficient power management and switching applications. |
| **Drain-Source Voltage (VDS)** | 60V | Maximum drain-source voltage, suitable for a variety of power management and load control. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate-source voltage range, supports higher gate voltage input. |
| **Turning Voltage (Vth)** | 1.7V | Gate voltage threshold, quickly turn on at a lower voltage, suitable for low voltage applications. |
| **On-resistance (RDS(ON))** | 85mΩ @ VGS=4.5V | On-resistance at 4.5V gate voltage, suitable for low power applications. |
| **On-resistance (RDS(ON))** | 76mΩ @ VGS=10V | On-resistance at 10V gate voltage, further reducing power consumption. |
| **Drain current (ID)** | 4.5A | Maximum continuous drain current, suitable for medium load applications. |
| **Technology** | Trench | Trench technology provides lower conduction losses and higher efficiency. |
| **Operating temperature range** | -55°C ~ +150°C | Wide operating temperature range, suitable for a variety of application scenarios. |
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| **Parameter** | **Value** | **Description** |
|----------------------|--------------------------|------------------------------------------------------|
| **Package** | SOT223 | Small SOT223 package, suitable for high-density circuit board design. |
| **Configuration** | Single-N-Channel | Single N-type MOSFET, suitable for efficient power management and switching applications. |
| **Drain-Source Voltage (VDS)** | 60V | Maximum drain-source voltage, suitable for a variety of power management and load control. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate-source voltage range, supports higher gate voltage input. |
| **Turning Voltage (Vth)** | 1.7V | Gate voltage threshold, quickly turn on at a lower voltage, suitable for low voltage applications. |
| **On-resistance (RDS(ON))** | 85mΩ @ VGS=4.5V | On-resistance at 4.5V gate voltage, suitable for low power applications. |
| **On-resistance (RDS(ON))** | 76mΩ @ VGS=10V | On-resistance at 10V gate voltage, further reducing power consumption. |
| **Drain current (ID)** | 4.5A | Maximum continuous drain current, suitable for medium load applications. |
| **Technology** | Trench | Trench technology provides lower conduction losses and higher efficiency. |
| **Operating temperature range** | -55°C ~ +150°C | Wide operating temperature range, suitable for a variety of application scenarios. |
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Domain and module applications：
III. Applications and module examples
1. **Power Management**
NIF62514T3G-VB is suitable for **power management modules** to efficiently control power supply and enhance system stability.
**Example:** In a switching power supply, this MOSFET can be used to control the output voltage to improve the overall energy conversion efficiency.
2. **Load Switching**
This MOSFET is ideal for **load switching** applications, which can quickly and reliably switch power and load.
**Example:** In portable electronic devices, NIF62514T3G-VB can be used to switch battery power to extend the use time of the device.
3. **Motor Driving**
NIF62514T3G-VB can be used in **motor driving circuits** to provide efficient switching control.
**Example:** In power tools, MOSFET can be used as a motor control switch to improve the motor's response speed and efficiency.
4. **LED Driving**
This MOSFET can be used in **LED driving circuit** to achieve brightness adjustment and on/off control.
**Example:** In LED lighting systems, NIF62514T3G-VB can switch quickly to control the brightness and on/off state of LEDs.
5. **Signal Switching**
NIF62514T3G-VB can be used as a **signal switch**, which excels in low voltage and high frequency signal transmission.
**Example:** In audio equipment, MOSFET can be used to switch between different sound sources to ensure the stability and clarity of signal transmission.
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NIF62514T3G-VB is an excellent N-channel power MOSFET. With its efficient electrical performance and miniaturized design, it is widely used in power management, load switching and LED driving, meeting the needs of modern electronic equipment for high efficiency and flexibility.
1. **Power Management**
NIF62514T3G-VB is suitable for **power management modules** to efficiently control power supply and enhance system stability.
**Example:** In a switching power supply, this MOSFET can be used to control the output voltage to improve the overall energy conversion efficiency.
2. **Load Switching**
This MOSFET is ideal for **load switching** applications, which can quickly and reliably switch power and load.
**Example:** In portable electronic devices, NIF62514T3G-VB can be used to switch battery power to extend the use time of the device.
3. **Motor Driving**
NIF62514T3G-VB can be used in **motor driving circuits** to provide efficient switching control.
**Example:** In power tools, MOSFET can be used as a motor control switch to improve the motor's response speed and efficiency.
4. **LED Driving**
This MOSFET can be used in **LED driving circuit** to achieve brightness adjustment and on/off control.
**Example:** In LED lighting systems, NIF62514T3G-VB can switch quickly to control the brightness and on/off state of LEDs.
5. **Signal Switching**
NIF62514T3G-VB can be used as a **signal switch**, which excels in low voltage and high frequency signal transmission.
**Example:** In audio equipment, MOSFET can be used to switch between different sound sources to ensure the stability and clarity of signal transmission.
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NIF62514T3G-VB is an excellent N-channel power MOSFET. With its efficient electrical performance and miniaturized design, it is widely used in power management, load switching and LED driving, meeting the needs of modern electronic equipment for high efficiency and flexibility.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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