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NIF62514T1G-VB Product details
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1. NIF62514T1G-VB Product Introduction
NIF62514T1G-VB is a high-performance single N-channel MOSFET in SOT223 package, suitable for a variety of electronic applications. The device has a maximum drain-source voltage (V\(_{DS}\)) of 60V and a gate voltage (V\(_{GS}\)) range of ±20V, ensuring flexibility under different working conditions. Its threshold voltage (V\(_{th}\)) is 1.7V, which can achieve effective conduction at a lower gate voltage. The on-resistance (R\(_{DS(on)}\)) is 85mΩ at V\(_{GS}\) of 4.5V and 76mΩ at V\(_{GS}\) of 10V, showing excellent current control capability, and the maximum drain current (I\(_{D}\)) can reach 4.5A.
NIF62514T1G-VB adopts trench technology, with low on-resistance and efficient switching characteristics, making it excellent in high-frequency applications. Its small SOT223 package design makes it extremely popular in compact circuits and suitable for power management and switch control of various modules.
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NIF62514T1G-VB is a high-performance single N-channel MOSFET in SOT223 package, suitable for a variety of electronic applications. The device has a maximum drain-source voltage (V\(_{DS}\)) of 60V and a gate voltage (V\(_{GS}\)) range of ±20V, ensuring flexibility under different working conditions. Its threshold voltage (V\(_{th}\)) is 1.7V, which can achieve effective conduction at a lower gate voltage. The on-resistance (R\(_{DS(on)}\)) is 85mΩ at V\(_{GS}\) of 4.5V and 76mΩ at V\(_{GS}\) of 10V, showing excellent current control capability, and the maximum drain current (I\(_{D}\)) can reach 4.5A.
NIF62514T1G-VB adopts trench technology, with low on-resistance and efficient switching characteristics, making it excellent in high-frequency applications. Its small SOT223 package design makes it extremely popular in compact circuits and suitable for power management and switch control of various modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
II. Detailed parameter description of NIF62514T1G-VB
| **Parameter** | **Value** | **Description** |
|-----------------------------|------------------------------|---------------------------------|
| **Package type** | SOT223 | Compact package, suitable for high-density PCB design|
| **Configuration** | Single N-channel | Suitable for unidirectional current switching|
| **V\(_{DS}\)** | 60V | Maximum voltage between drain and source|
| **V\(_{GS}\)** | ±20V | Maximum voltage between gate and source|
| **V\(_{th}\)** | 1.7V | Threshold voltage|
| **R\(_{DS(on)}\)** | 85mΩ @ V\(_{GS}\)=4.5V | On-resistance|
| **R\(_{DS(on)}\)** | 76mΩ @ V\(_{GS}\)=10V | On-resistance|
| **I\(_D\)** | 4.5A | Maximum continuous drain current|
| **Technology** | Trench process | Improve performance, reduce power consumption|
| **Operating temperature range** | -55°C ~ 150°C | Adapt to harsh environments|
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| **Parameter** | **Value** | **Description** |
|-----------------------------|------------------------------|---------------------------------|
| **Package type** | SOT223 | Compact package, suitable for high-density PCB design|
| **Configuration** | Single N-channel | Suitable for unidirectional current switching|
| **V\(_{DS}\)** | 60V | Maximum voltage between drain and source|
| **V\(_{GS}\)** | ±20V | Maximum voltage between gate and source|
| **V\(_{th}\)** | 1.7V | Threshold voltage|
| **R\(_{DS(on)}\)** | 85mΩ @ V\(_{GS}\)=4.5V | On-resistance|
| **R\(_{DS(on)}\)** | 76mΩ @ V\(_{GS}\)=10V | On-resistance|
| **I\(_D\)** | 4.5A | Maximum continuous drain current|
| **Technology** | Trench process | Improve performance, reduce power consumption|
| **Operating temperature range** | -55°C ~ 150°C | Adapt to harsh environments|
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Domain and module applications：
III. Applicable fields and module applications
1. **Power management system**
NIF62514T1G-VB is very suitable for power management modules, especially in DC-DC converters and load switching circuits. With its low on-resistance and high current handling capability, this MOSFET can effectively improve the energy efficiency of the system and reduce overall power consumption.
2. **Consumer electronics**
This MOSFET is widely used in smartphones, tablets and various home appliances as an ideal choice for power switches. Its compact SOT223 package design makes it perform well in devices with limited space.
3. **LED drive circuit**
In LED lighting applications, NIF62514T1G-VB can be used in LED drive circuits to achieve efficient dimming and switching control through its fast switching characteristics. Its low on-resistance can help reduce power consumption and increase the brightness of the LED.
4. **Motor control**
The device is also suitable for controlling small motors, such as those used in power tools and household appliances. Its fast switching capability enables efficient starting and stopping of motors, thereby improving the response speed and performance of the system.
5. **High-frequency switching power supply**
The high-frequency performance of NIF62514T1G-VB makes it very suitable for high-frequency switching power supply designs, such as switch-mode power supplies (SMPS). Its superior electrical performance can help designers reduce switching losses and improve the efficiency of the overall power supply.
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As a high-efficiency single N-channel MOSFET, NIF62514T1G-VB is an ideal choice for power management and switch control in many fields through its excellent electrical characteristics and compact package design. It can provide efficient and reliable circuit solutions in power management, LED lighting, motor control and consumer electronics.
1. **Power management system**
NIF62514T1G-VB is very suitable for power management modules, especially in DC-DC converters and load switching circuits. With its low on-resistance and high current handling capability, this MOSFET can effectively improve the energy efficiency of the system and reduce overall power consumption.
2. **Consumer electronics**
This MOSFET is widely used in smartphones, tablets and various home appliances as an ideal choice for power switches. Its compact SOT223 package design makes it perform well in devices with limited space.
3. **LED drive circuit**
In LED lighting applications, NIF62514T1G-VB can be used in LED drive circuits to achieve efficient dimming and switching control through its fast switching characteristics. Its low on-resistance can help reduce power consumption and increase the brightness of the LED.
4. **Motor control**
The device is also suitable for controlling small motors, such as those used in power tools and household appliances. Its fast switching capability enables efficient starting and stopping of motors, thereby improving the response speed and performance of the system.
5. **High-frequency switching power supply**
The high-frequency performance of NIF62514T1G-VB makes it very suitable for high-frequency switching power supply designs, such as switch-mode power supplies (SMPS). Its superior electrical performance can help designers reduce switching losses and improve the efficiency of the overall power supply.
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As a high-efficiency single N-channel MOSFET, NIF62514T1G-VB is an ideal choice for power management and switch control in many fields through its excellent electrical characteristics and compact package design. It can provide efficient and reliable circuit solutions in power management, LED lighting, motor control and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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