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NIF5003NT3G-VB Product details
Back to previous pageProduct introduction：
1. NIF5003NT3G-VB Product Introduction
NIF5003NT3G-VB is a high-performance **N-channel MOSFET**, packaged in **SOT223**, designed for high-voltage applications. Its drain-source voltage (VDS) is as high as **60V**, the maximum gate-source voltage (VGS) is **±20V**, and it has a **1.7V** turn-on threshold voltage (Vth), which is suitable for use in a variety of electronic circuits. The on-resistance (RDS(ON)) of NIF5003NT3G-VB is **33mΩ@VGS=4.5V** and **28mΩ@VGS=10V**, and it exhibits excellent conductivity and high efficiency at a maximum drain current (ID) of **7A**. Using **Trench technology**, in applications with higher switching frequencies, its switching losses are low, which can effectively improve the performance of the overall circuit.
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NIF5003NT3G-VB is a high-performance **N-channel MOSFET**, packaged in **SOT223**, designed for high-voltage applications. Its drain-source voltage (VDS) is as high as **60V**, the maximum gate-source voltage (VGS) is **±20V**, and it has a **1.7V** turn-on threshold voltage (Vth), which is suitable for use in a variety of electronic circuits. The on-resistance (RDS(ON)) of NIF5003NT3G-VB is **33mΩ@VGS=4.5V** and **28mΩ@VGS=10V**, and it exhibits excellent conductivity and high efficiency at a maximum drain current (ID) of **7A**. Using **Trench technology**, in applications with higher switching frequencies, its switching losses are low, which can effectively improve the performance of the overall circuit.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
II. Detailed parameter description
| **Parameter name** | **Specification** | **Description** |
|----------------------|------------------------------|------------------------------------------|
| **Model** | NIF5003NT3G-VB | |
| **Package type** | SOT223 | Small surface mount package, suitable for space-constrained circuit design|
| **Configuration** | Single N-channel | Suitable for unidirectional current flow control|
| **Drain-source voltage (VDS)** | 60V | Maximum drain-source voltage|
| **Gate-source voltage (VGS)** | ±20V | Maximum gate voltage to ensure reliable driving of the device|
| **Turning-on threshold voltage (Vth)** | 1.7V | Minimum voltage required to turn on the N-channel|
| **On-resistance (RDS(ON))** | 33mΩ @ VGS=4.5V | On-resistance at VGS=4.5V|
| | 28mΩ @ VGS=10V | On-resistance at VGS=10V|
| **Drain current (ID)** | 7A | Maximum drain current|
| **Technology** | Trench | Improved conductivity and switching efficiency|
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| **Parameter name** | **Specification** | **Description** |
|----------------------|------------------------------|------------------------------------------|
| **Model** | NIF5003NT3G-VB | |
| **Package type** | SOT223 | Small surface mount package, suitable for space-constrained circuit design|
| **Configuration** | Single N-channel | Suitable for unidirectional current flow control|
| **Drain-source voltage (VDS)** | 60V | Maximum drain-source voltage|
| **Gate-source voltage (VGS)** | ±20V | Maximum gate voltage to ensure reliable driving of the device|
| **Turning-on threshold voltage (Vth)** | 1.7V | Minimum voltage required to turn on the N-channel|
| **On-resistance (RDS(ON))** | 33mΩ @ VGS=4.5V | On-resistance at VGS=4.5V|
| | 28mΩ @ VGS=10V | On-resistance at VGS=10V|
| **Drain current (ID)** | 7A | Maximum drain current|
| **Technology** | Trench | Improved conductivity and switching efficiency|
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Domain and module applications：
III. Applications and module examples
1. **Power management system**:
NIF5003NT3G-VB performs well in **switching power supplies** and **DC-DC converters**. With its low on-resistance and high efficiency, it can effectively reduce energy loss and ensure efficient power management. This makes it widely used in the power systems of computers and consumer electronics.
2. **LED drive circuit**:
In **LED lighting solutions**, NIF5003NT3G-VB can be used as an LED drive switch to optimize brightness and energy efficiency by controlling the current of the LED. Its fast switching characteristics also ensure the long life of the LED.
3. **Power tools and small appliances**:
This MOSFET can be used for power switches in **power tools** and **small appliances** to ensure efficient control of the start and stop of motors and heating elements. Due to its compact package design, it is also suitable for space-constrained devices.
4. **Electric vehicle charger**:
NIF5003NT3G-VB can play an important role in **Electric vehicle charger**, as a high-voltage switching element, ensuring the safety and efficiency of the charging process and supporting faster charging rates.
5. **Portable consumer electronics**:
Due to its small SOT223 package, NIF5003NT3G-VB is particularly suitable for power management of **portable devices**, such as smartphones and wireless headsets. Its low power consumption characteristics can extend battery life and enhance user experience.
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NIF5003NT3G-VB is a high-voltage and high-efficiency N-channel MOSFET. With its excellent electrical performance and miniaturized package, it can meet the strict requirements of modern electronic products for power control and space utilization, and is widely used in various power management and drive circuits.
1. **Power management system**:
NIF5003NT3G-VB performs well in **switching power supplies** and **DC-DC converters**. With its low on-resistance and high efficiency, it can effectively reduce energy loss and ensure efficient power management. This makes it widely used in the power systems of computers and consumer electronics.
2. **LED drive circuit**:
In **LED lighting solutions**, NIF5003NT3G-VB can be used as an LED drive switch to optimize brightness and energy efficiency by controlling the current of the LED. Its fast switching characteristics also ensure the long life of the LED.
3. **Power tools and small appliances**:
This MOSFET can be used for power switches in **power tools** and **small appliances** to ensure efficient control of the start and stop of motors and heating elements. Due to its compact package design, it is also suitable for space-constrained devices.
4. **Electric vehicle charger**:
NIF5003NT3G-VB can play an important role in **Electric vehicle charger**, as a high-voltage switching element, ensuring the safety and efficiency of the charging process and supporting faster charging rates.
5. **Portable consumer electronics**:
Due to its small SOT223 package, NIF5003NT3G-VB is particularly suitable for power management of **portable devices**, such as smartphones and wireless headsets. Its low power consumption characteristics can extend battery life and enhance user experience.
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NIF5003NT3G-VB is a high-voltage and high-efficiency N-channel MOSFET. With its excellent electrical performance and miniaturized package, it can meet the strict requirements of modern electronic products for power control and space utilization, and is widely used in various power management and drive circuits.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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