NIF5003NT1G-VB Product details
Product introduction:
NIF5003NT1G-VB is a high-performance **single N-channel MOSFET** in a **SOT223 package**, designed for applications that require high efficiency and small size. The device has a maximum **drain-source voltage (VDS)** of **60V** and a gate-source voltage (VGS) of **±20V**, enabling it to operate stably in a variety of high-voltage environments. Its turn-on voltage (Vth) is **1.7V**, and its on-resistance (RDS(ON)) is as low as **28mΩ** at **VGS=10V** and **33mΩ** at **VGS=4.5V**, ensuring low power consumption and high efficiency. With a maximum continuous current of **7A**, this device is ideal for applications such as switching power supplies, LED drivers, and battery management.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | 28mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
| **Parameter** | **Description** | **Value** |
|-------------------------|----------------------------------------|----------------------|
| **Package** | SOT-223 | Miniaturized design|
| **Configuration** | Single N-channel MOSFET | Simplified design|
| **Drain-source voltage (VDS)** | Maximum withstand voltage| 60V |
| **Gate-source voltage (VGS)** | Gate withstand voltage| ±20V |
| **Through voltage (Vth)** | Turn-on voltage| 1.7V |
| **On-resistance (RDS(ON))** | @ VGS = 4.5V | 33mΩ |
| | @ VGS = 10V | 28mΩ |
| **Maximum drain current (ID)** | Maximum continuous current| 7A |
| **Technology** | Trench Technology | High Efficiency, Low Losses |
| **Operating Temperature Range** | Operating Temperature Range | -55°C to 150°C |
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Domain and module applications:
1. **Switching power supply**
NIF5003NT1G-VB is an efficient switching element in **switching power supply** (SMPS) and can be used in power conversion circuits to improve the efficiency of the overall power supply and reduce standby power consumption.
2. **LED drive circuit**
This device is very suitable for **LED drive** applications. It can efficiently control the switching and brightness adjustment of LEDs, ensure the effective use of energy and extend the service life of LEDs.
3. **Battery management system (BMS)**
NIF5003NT1G-VB can be used in **battery management system** to achieve precise control of the battery charging and discharging process, ensure that the battery works within a safe range, and optimize the charging efficiency.
4. **Motor drive**
In **motor control** applications, NIF5003NT1G-VB can be used as a switching element in an H-bridge circuit to achieve precise control of the motor and improve the efficiency and response speed of the motor drive.
5. **Consumer electronics**
In **portable electronic devices** and **mobile products**, NIF5003NT1G-VB can be used for power switching, load driving, etc., to reduce battery consumption and improve the endurance of the device.
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With its excellent conduction performance and compact package design, NIF5003NT1G-VB has become an ideal choice for a wide range of applications in modern electronic design, especially in the field of power management and control.
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