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NID9N05CLT4G-VB Product details

Product introduction:



The NID9N05CLT4G-VB is a **single N-channel MOSFET** in a **TO252 package**, designed for high-efficiency power management and switching applications. Its maximum drain-source voltage (V\(_{DS}\)) is **60V**, and it supports a gate-source voltage (V\(_{GS}\)) of ±20V, which is suitable for various power supply environments. The threshold voltage (V\(_{th}\)) of the device is **1.7V**, ensuring effective conduction even under lower voltage drive.

The on-resistance (R\(_{DS(ON)}\)) of the NID9N05CLT4G-VB performs well at different gate voltages, which are **85mΩ @ V\(_{GS}\) = 4.5V** and **73mΩ @ V\(_{GS}\) = 10V**, respectively, and supports a maximum continuous drain current of **18A**. Through **Trench technology**, this MOSFET provides excellent switching characteristics and low conduction loss, and is widely used in power management and load control of various electronic products.

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## 2. NID9N05CLT4G-VB

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO252 Single-N 60V 1.7V 18A 73mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO252 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO252 Single-N 60V 1.7V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO252 Single-N 60V 1.7V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO252 Single-N


| **Parameter** | **Value** | **Description** |
|---------------------|----------------------------------|-----------------------------------------------|
| **Package Type** | TO252 | Compact package, suitable for various application scenarios|
| **Configuration** | Single-N-Channel | Single N-channel device, simplifying circuit design|
| **V\(_{DS}\)** | 60V | Maximum drain-source voltage, suitable for a variety of power supply designs|
| **V\(_{GS}\)** | ±20V | Maximum gate-source voltage, providing flexible control|
| **V\(_{th}\)** | 1.7V | Threshold voltage, ensuring effective conduction at low voltages|
| **R\(_{DS(ON)}\)** | 85mΩ (@V\(_{GS}\)=4.5V) | On-resistance, ensuring low loss|
| | 73mΩ (@V\(_{GS}\)=10V) | |
| **I\(_D\)** | 18A | Maximum continuous drain current, meeting high load capacity|
| **Working technology** | Trench | Trench technology, improving switching performance and energy efficiency|
| **Operating temperature range** | -55°C ~ +150°C | Stable operation under various environmental conditions|
| **Application characteristics** | Efficient power switching and load management | Reduce heat loss and improve circuit efficiency|

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## III. NID9N05CLT4G-VB

Domain and module applications:



1. **Power management circuits**
- NID9N05CLT4G-VB can be widely used in **DC-DC converters** to ensure efficient power conversion and stable output. In such applications, it can effectively reduce power loss and improve overall efficiency.

2. **Household appliances**
- This MOSFET is suitable for switching control of **household appliances**, such as refrigerators, air conditioners and washing machines. When the load changes, the fast switching capability of NID9N05CLT4G-VB can ensure stable operation of the equipment.

3. **Power tools**
- In the power management and control of **power tools**, the device can provide stable current output to meet the high starting current requirements of electric motors, ensuring efficient and reliable operation of the tools.

4. **LED drive circuit**
- NID9N05CLT4G-VB is also widely used in **LED lighting systems**, as a switching element to control the brightness and power of LEDs, improve the efficiency of power supplies, and extend the service life of LEDs.

5. **Industrial control systems**
- In **industrial automation and control** systems, this MOSFET can be used to drive loads, provide fast and reliable switching operations, and ensure stable operation of the system in complex environments.

NID9N05CLT4G-VB
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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