NID9N05CLT4G-VB Product details
Product introduction:
The NID9N05CLT4G-VB is a **single N-channel MOSFET** in a **TO252 package**, designed for high-efficiency power management and switching applications. Its maximum drain-source voltage (V\(_{DS}\)) is **60V**, and it supports a gate-source voltage (V\(_{GS}\)) of ±20V, which is suitable for various power supply environments. The threshold voltage (V\(_{th}\)) of the device is **1.7V**, ensuring effective conduction even under lower voltage drive.
The on-resistance (R\(_{DS(ON)}\)) of the NID9N05CLT4G-VB performs well at different gate voltages, which are **85mΩ @ V\(_{GS}\) = 4.5V** and **73mΩ @ V\(_{GS}\) = 10V**, respectively, and supports a maximum continuous drain current of **18A**. Through **Trench technology**, this MOSFET provides excellent switching characteristics and low conduction loss, and is widely used in power management and load control of various electronic products.
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## 2. NID9N05CLT4G-VB
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| **Parameter** | **Value** | **Description** |
|---------------------|----------------------------------|-----------------------------------------------|
| **Package Type** | TO252 | Compact package, suitable for various application scenarios|
| **Configuration** | Single-N-Channel | Single N-channel device, simplifying circuit design|
| **V\(_{DS}\)** | 60V | Maximum drain-source voltage, suitable for a variety of power supply designs|
| **V\(_{GS}\)** | ±20V | Maximum gate-source voltage, providing flexible control|
| **V\(_{th}\)** | 1.7V | Threshold voltage, ensuring effective conduction at low voltages|
| **R\(_{DS(ON)}\)** | 85mΩ (@V\(_{GS}\)=4.5V) | On-resistance, ensuring low loss|
| | 73mΩ (@V\(_{GS}\)=10V) | |
| **I\(_D\)** | 18A | Maximum continuous drain current, meeting high load capacity|
| **Working technology** | Trench | Trench technology, improving switching performance and energy efficiency|
| **Operating temperature range** | -55°C ~ +150°C | Stable operation under various environmental conditions|
| **Application characteristics** | Efficient power switching and load management | Reduce heat loss and improve circuit efficiency|
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## III. NID9N05CLT4G-VB
Domain and module applications:
1. **Power management circuits**
- NID9N05CLT4G-VB can be widely used in **DC-DC converters** to ensure efficient power conversion and stable output. In such applications, it can effectively reduce power loss and improve overall efficiency.
2. **Household appliances**
- This MOSFET is suitable for switching control of **household appliances**, such as refrigerators, air conditioners and washing machines. When the load changes, the fast switching capability of NID9N05CLT4G-VB can ensure stable operation of the equipment.
3. **Power tools**
- In the power management and control of **power tools**, the device can provide stable current output to meet the high starting current requirements of electric motors, ensuring efficient and reliable operation of the tools.
4. **LED drive circuit**
- NID9N05CLT4G-VB is also widely used in **LED lighting systems**, as a switching element to control the brightness and power of LEDs, improve the efficiency of power supplies, and extend the service life of LEDs.
5. **Industrial control systems**
- In **industrial automation and control** systems, this MOSFET can be used to drive loads, provide fast and reliable switching operations, and ensure stable operation of the system in complex environments.
NID9N05CLT4G-VB
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