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NID9N05ACLT4G-VB Product details
Back to previous pageProduct introduction：
1. NID9N05ACLT4G-VB Product Introduction
NID9N05ACLT4G-VB is a high-performance **single N-channel MOSFET**, using **TO252 package**, designed for medium power applications. The maximum drain-source voltage (VDS) of the device is **60V**, allowing stable operation in a high-voltage environment. The limit value of its gate-source voltage (VGS) is **±20V**, ensuring its safe operation under a variety of driving conditions. The turn-on voltage (Vth) is **1.7V**, which enables the MOSFET to turn on quickly at a lower gate voltage, suitable for low-voltage drive applications. The device's on-resistance (RDS(ON)) is **85mΩ** at VGS = 4.5V, and it drops to **73mΩ** at VGS = 10V, which makes the MOSFET have excellent efficiency and thermal performance in high-current applications. The use of **Trench technology** further improves the switching speed and reduces the switching loss, making it have a wide range of application potential in power management and control systems.
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NID9N05ACLT4G-VB is a high-performance **single N-channel MOSFET**, using **TO252 package**, designed for medium power applications. The maximum drain-source voltage (VDS) of the device is **60V**, allowing stable operation in a high-voltage environment. The limit value of its gate-source voltage (VGS) is **±20V**, ensuring its safe operation under a variety of driving conditions. The turn-on voltage (Vth) is **1.7V**, which enables the MOSFET to turn on quickly at a lower gate voltage, suitable for low-voltage drive applications. The device's on-resistance (RDS(ON)) is **85mΩ** at VGS = 4.5V, and it drops to **73mΩ** at VGS = 10V, which makes the MOSFET have excellent efficiency and thermal performance in high-current applications. The use of **Trench technology** further improves the switching speed and reduces the switching loss, making it have a wide range of application potential in power management and control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | 73mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 60V | 1.7V | 18A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. NID9N05ACLT4G-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-----------------------|------------------------|------------------------------------------|
| **Package type** | TO252 | Small package, suitable for high-density circuit design. |
| **MOSFET configuration** | Single N-channel | Provides efficient current control, suitable for a variety of applications. |
| **Drain-source voltage (VDS)** | 60V | Suitable for switching applications in a variety of medium-voltage systems. |
| **Gate-source voltage (VGS)** | ±20V | Wide driving voltage range to meet different application requirements. |
| **Turning voltage (Vth)** | 1.7V | Suitable for low-voltage drive, fast response. |
| **On-resistance (RDS(ON))** | 85mΩ @ VGS=4.5V | Reduce power consumption and improve system efficiency. |
| **On-resistance (RDS(ON))** | 73mΩ @ VGS=10V | Supports high current conduction, suitable for high current applications. |
| **Drain current (ID)** | 18A | Supports higher load current, meeting various application requirements. |
| **Technology type** | Trench | Improves switching speed and reduces switching loss. |
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| **Parameter** | **Value** | **Description** |
|-----------------------|------------------------|------------------------------------------|
| **Package type** | TO252 | Small package, suitable for high-density circuit design. |
| **MOSFET configuration** | Single N-channel | Provides efficient current control, suitable for a variety of applications. |
| **Drain-source voltage (VDS)** | 60V | Suitable for switching applications in a variety of medium-voltage systems. |
| **Gate-source voltage (VGS)** | ±20V | Wide driving voltage range to meet different application requirements. |
| **Turning voltage (Vth)** | 1.7V | Suitable for low-voltage drive, fast response. |
| **On-resistance (RDS(ON))** | 85mΩ @ VGS=4.5V | Reduce power consumption and improve system efficiency. |
| **On-resistance (RDS(ON))** | 73mΩ @ VGS=10V | Supports high current conduction, suitable for high current applications. |
| **Drain current (ID)** | 18A | Supports higher load current, meeting various application requirements. |
| **Technology type** | Trench | Improves switching speed and reduces switching loss. |
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Domain and module applications：
III. Application Fields and Module Examples
1. **Power Management and Conversion**:
NID9N05ACLT4G-VB is particularly suitable for **DC-DC Converter** and **Power Switch** modules, which can efficiently control the distribution and switching of power. Its low on-resistance ensures efficiency under high current working conditions, and is suitable for various power adapters and power management systems, ensuring good performance and reliability.
2. **Battery Management System (BMS)**:
This MOSFET can be used for battery switching and protection functions in **Battery Management System**. Due to its good thermal performance and low switching loss, it can effectively improve the charging and discharging efficiency of the battery, and is suitable for electric vehicles, smart homes and portable electronic devices.
3. **LED Drive Circuit**:
NID9N05ACLT4G-VB is also widely used in **LED drive circuit** to control the switching and dimming of LEDs. Its low on-resistance and fast switching characteristics enable it to provide a stable drive current, ensuring accurate brightness adjustment of the light, suitable for various lighting applications.
4. **Motor control and drive**:
This MOSFET can be used in **motor drive circuits**, such as drive modules for DC motors and stepper motors. Its high current handling capability and low switching loss enable it to efficiently drive motors and improve the overall efficiency of the system, and is widely used in industrial automation and robotic systems.
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NID9N05ACLT4G-VB is an ideal choice for various power management applications with its 60V voltage support, good conduction performance and efficient thermal management capabilities. In the fields of power management, battery management, LED drive and motor control, this MOSFET can significantly improve the efficiency and reliability of the system.
1. **Power Management and Conversion**:
NID9N05ACLT4G-VB is particularly suitable for **DC-DC Converter** and **Power Switch** modules, which can efficiently control the distribution and switching of power. Its low on-resistance ensures efficiency under high current working conditions, and is suitable for various power adapters and power management systems, ensuring good performance and reliability.
2. **Battery Management System (BMS)**:
This MOSFET can be used for battery switching and protection functions in **Battery Management System**. Due to its good thermal performance and low switching loss, it can effectively improve the charging and discharging efficiency of the battery, and is suitable for electric vehicles, smart homes and portable electronic devices.
3. **LED Drive Circuit**:
NID9N05ACLT4G-VB is also widely used in **LED drive circuit** to control the switching and dimming of LEDs. Its low on-resistance and fast switching characteristics enable it to provide a stable drive current, ensuring accurate brightness adjustment of the light, suitable for various lighting applications.
4. **Motor control and drive**:
This MOSFET can be used in **motor drive circuits**, such as drive modules for DC motors and stepper motors. Its high current handling capability and low switching loss enable it to efficiently drive motors and improve the overall efficiency of the system, and is widely used in industrial automation and robotic systems.
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NID9N05ACLT4G-VB is an ideal choice for various power management applications with its 60V voltage support, good conduction performance and efficient thermal management capabilities. In the fields of power management, battery management, LED drive and motor control, this MOSFET can significantly improve the efficiency and reliability of the system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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