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NDT452P-VB Product details
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1. NDT452P-VB Product Introduction
NDT452P-VB is a high-performance **P-channel** power MOSFET in **SOT223** package, designed for high-efficiency and low-power applications. The device has a **drain-source voltage (VDS)** of up to -40V, which can withstand a variety of power management requirements. Its **gate voltage (VGS)** operating range is ±20V, which enables it to perform well under different operating conditions. **The turn-on voltage (Vth)** is -1.7V, which allows the MOSFET to effectively turn on and respond quickly at a lower gate voltage. Under different gate voltage conditions, the **on-resistance (RDS(ON))** is **48mΩ** (at **VGS=4.5V**) and **40mΩ** (at **VGS=10V**), which helps reduce power consumption and improve system efficiency. NDT452P-VB adopts **Trench Technology**, providing higher current carrying capacity and suitable for a variety of application scenarios, such as power management, load switching and signal switching.
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NDT452P-VB is a high-performance **P-channel** power MOSFET in **SOT223** package, designed for high-efficiency and low-power applications. The device has a **drain-source voltage (VDS)** of up to -40V, which can withstand a variety of power management requirements. Its **gate voltage (VGS)** operating range is ±20V, which enables it to perform well under different operating conditions. **The turn-on voltage (Vth)** is -1.7V, which allows the MOSFET to effectively turn on and respond quickly at a lower gate voltage. Under different gate voltage conditions, the **on-resistance (RDS(ON))** is **48mΩ** (at **VGS=4.5V**) and **40mΩ** (at **VGS=10V**), which helps reduce power consumption and improve system efficiency. NDT452P-VB adopts **Trench Technology**, providing higher current carrying capacity and suitable for a variety of application scenarios, such as power management, load switching and signal switching.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-P | -40V | -1.7V | -6.2A | 40mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-P | -40V | -1.7V | -6.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-P | -40V | -1.7V | -6.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-P |
2. NDT452P-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|----------------------|--------------------------|------------------------------------------------------|
| **Package** | SOT223 | Small SOT223 package, suitable for high-density circuit board design. |
| **Configuration** | Single-P-Channel | Single P-type MOSFET, suitable for load switching and efficient power management. |
| **Drain-Source Voltage (VDS)** | -40V | Maximum drain-source voltage, suitable for a variety of power management applications. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate-source voltage range, supports higher gate voltage input. |
| **Turning Voltage (Vth)** | -1.7V | Gate voltage threshold, quickly turn on at a lower voltage, suitable for low voltage applications. |
| **On-resistance (RDS(ON))** | 48mΩ @ VGS=4.5V | On-resistance at 4.5V gate voltage, suitable for low power applications. |
| **On-resistance (RDS(ON))** | 40mΩ @ VGS=10V | On-resistance at 10V gate voltage, further reducing power consumption. |
| **Drain current (ID)** | -6.2A | Maximum continuous drain current, suitable for medium load applications. |
| **Technology** | Trench | Trench technology provides lower conduction losses and higher efficiency. |
| **Operating temperature range** | -55°C ~ +150°C | Wide operating temperature range, suitable for a variety of application scenarios. |
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| **Parameter** | **Value** | **Description** |
|----------------------|--------------------------|------------------------------------------------------|
| **Package** | SOT223 | Small SOT223 package, suitable for high-density circuit board design. |
| **Configuration** | Single-P-Channel | Single P-type MOSFET, suitable for load switching and efficient power management. |
| **Drain-Source Voltage (VDS)** | -40V | Maximum drain-source voltage, suitable for a variety of power management applications. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate-source voltage range, supports higher gate voltage input. |
| **Turning Voltage (Vth)** | -1.7V | Gate voltage threshold, quickly turn on at a lower voltage, suitable for low voltage applications. |
| **On-resistance (RDS(ON))** | 48mΩ @ VGS=4.5V | On-resistance at 4.5V gate voltage, suitable for low power applications. |
| **On-resistance (RDS(ON))** | 40mΩ @ VGS=10V | On-resistance at 10V gate voltage, further reducing power consumption. |
| **Drain current (ID)** | -6.2A | Maximum continuous drain current, suitable for medium load applications. |
| **Technology** | Trench | Trench technology provides lower conduction losses and higher efficiency. |
| **Operating temperature range** | -55°C ~ +150°C | Wide operating temperature range, suitable for a variety of application scenarios. |
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Domain and module applications：
III. Application fields and module examples
1. **Power Management**
NDT452P-VB is suitable for **power management modules**, which can efficiently control loads and improve system efficiency.
**Example:** In switching power supplies, MOSFETs can be used to control output voltage and improve energy conversion efficiency.
2. **Load Switching**
This MOSFET can be used in **load switching** applications to efficiently switch power and load.
**Example:** In portable devices, MOSFETs can switch batteries to extend the use time of the device.
3. **LED Driving**
NDT452P-VB is suitable for use in **LED driving circuits** to achieve efficient switching control.
**Example:** In LED lighting systems, MOSFETs can switch quickly to control the brightness and on/off of LEDs.
4. **Signal Switch**
This MOSFET can be used as a **signal switch**, suitable for low voltage and high frequency signal transmission.
**Example:** In audio equipment, MOSFET can be used to switch different sound sources to ensure stable signal transmission.
5. **Power Amplifiers**
NDT452P-VB is suitable for **power amplifier** applications to provide higher gain and efficiency.
**Example:** In wireless communication equipment, MOSFET can be used to amplify signals to improve the clarity and strength of signal transmission.
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NDT452P-VB is an excellent P-channel power MOSFET. With its compact SOT223 package and advanced trench technology, it is widely used in power management, load switching and signal switching, meeting the needs of modern electronic equipment for high efficiency and flexibility.
1. **Power Management**
NDT452P-VB is suitable for **power management modules**, which can efficiently control loads and improve system efficiency.
**Example:** In switching power supplies, MOSFETs can be used to control output voltage and improve energy conversion efficiency.
2. **Load Switching**
This MOSFET can be used in **load switching** applications to efficiently switch power and load.
**Example:** In portable devices, MOSFETs can switch batteries to extend the use time of the device.
3. **LED Driving**
NDT452P-VB is suitable for use in **LED driving circuits** to achieve efficient switching control.
**Example:** In LED lighting systems, MOSFETs can switch quickly to control the brightness and on/off of LEDs.
4. **Signal Switch**
This MOSFET can be used as a **signal switch**, suitable for low voltage and high frequency signal transmission.
**Example:** In audio equipment, MOSFET can be used to switch different sound sources to ensure stable signal transmission.
5. **Power Amplifiers**
NDT452P-VB is suitable for **power amplifier** applications to provide higher gain and efficiency.
**Example:** In wireless communication equipment, MOSFET can be used to amplify signals to improve the clarity and strength of signal transmission.
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NDT452P-VB is an excellent P-channel power MOSFET. With its compact SOT223 package and advanced trench technology, it is widely used in power management, load switching and signal switching, meeting the needs of modern electronic equipment for high efficiency and flexibility.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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