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NDT451N-VB Product details
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1. NDT451N-VB Product Introduction
NDT451N-VB is a high-efficiency single N-channel MOSFET in SOT223 package, suitable for application scenarios requiring compact design. The device has a maximum drain-source voltage (V\(_{DS}\)) of 30V and a gate voltage range of ±20V, providing a flexible operating environment. Its threshold voltage (V\(_{th}\)) is 1.7V, ensuring effective conduction at a lower gate voltage. The on-resistance (R\(_{DS(on)}\)) is 21mΩ and 19mΩ at V\(_{GS}\) of 4.5V and 10V, respectively, demonstrating its excellent current control capability, and the maximum drain current (I\(_{D}\)) can reach 7A.
This product adopts trench technology, with the characteristics of low on-resistance and high switching efficiency, suitable for high-frequency switching and energy-sensitive applications. Its SOT223 package design occupies less space on the PCB, making it suitable for power management of portable electronic devices and various modules.
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NDT451N-VB is a high-efficiency single N-channel MOSFET in SOT223 package, suitable for application scenarios requiring compact design. The device has a maximum drain-source voltage (V\(_{DS}\)) of 30V and a gate voltage range of ±20V, providing a flexible operating environment. Its threshold voltage (V\(_{th}\)) is 1.7V, ensuring effective conduction at a lower gate voltage. The on-resistance (R\(_{DS(on)}\)) is 21mΩ and 19mΩ at V\(_{GS}\) of 4.5V and 10V, respectively, demonstrating its excellent current control capability, and the maximum drain current (I\(_{D}\)) can reach 7A.
This product adopts trench technology, with the characteristics of low on-resistance and high switching efficiency, suitable for high-frequency switching and energy-sensitive applications. Its SOT223 package design occupies less space on the PCB, making it suitable for power management of portable electronic devices and various modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | 19mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 30V | 1.7V | 7A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
II. Detailed parameter description of NDT451N-VB
| **Parameter** | **Value** | **Description** |
|-----------------------------|------------------------------|---------------------------------|
| **Package type** | SOT223 | Compact package, suitable for high-density PCB design|
| **Configuration** | Single N-channel | Suitable for unidirectional current switching|
| **V\(_{DS}\)** | 30V | Maximum voltage between drain and source|
| **V\(_{GS}\)** | ±20V | Maximum voltage between gate and source|
| **V\(_{th}\)** | 1.7V | Threshold voltage|
| **R\(_{DS(on)}\)** | 21mΩ @ V\(_{GS}\)=4.5V | On-resistance|
| **R\(_{DS(on)}\)** | 19mΩ @ V\(_{GS}\)=10V | On-resistance|
| **I\(_D\)** | 7A | Maximum continuous drain current|
| **Technology** | Trench process | Improve performance, reduce power consumption|
| **Operating temperature range** | -55°C ~ 150°C | Adapt to harsh environments|
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| **Parameter** | **Value** | **Description** |
|-----------------------------|------------------------------|---------------------------------|
| **Package type** | SOT223 | Compact package, suitable for high-density PCB design|
| **Configuration** | Single N-channel | Suitable for unidirectional current switching|
| **V\(_{DS}\)** | 30V | Maximum voltage between drain and source|
| **V\(_{GS}\)** | ±20V | Maximum voltage between gate and source|
| **V\(_{th}\)** | 1.7V | Threshold voltage|
| **R\(_{DS(on)}\)** | 21mΩ @ V\(_{GS}\)=4.5V | On-resistance|
| **R\(_{DS(on)}\)** | 19mΩ @ V\(_{GS}\)=10V | On-resistance|
| **I\(_D\)** | 7A | Maximum continuous drain current|
| **Technology** | Trench process | Improve performance, reduce power consumption|
| **Operating temperature range** | -55°C ~ 150°C | Adapt to harsh environments|
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Domain and module applications：
III. Applicable fields and module applications
1. **Power management system**
NDT451N-VB is very suitable for power management modules, especially in DC-DC converters and load switching circuits. Due to its low on-resistance and high current handling capability, this MOSFET can effectively improve the energy efficiency of the system and reduce power consumption.
2. **Portable electronic devices**
This MOSFET is widely used in consumer electronic devices such as smartphones, tablets and portable chargers as a power switch. Its compact SOT223 package design provides the necessary space optimization for portable products.
3. **LED driver**
In LED lighting applications, NDT451N-VB can be used in LED driver circuits to achieve efficient dimming and switching control through its fast switching performance. Its excellent conduction performance can meet the needs of high-brightness LEDs.
4. **Motor control**
The device is also suitable for the control of small motors, such as in power tools and household appliances. Its fast switching characteristics enable quick start and stop of the motor, improving the response speed of the system.
5. **High-frequency switching power supply**
The high-frequency performance of NDT451N-VB makes it suitable for high-frequency switching power supply design, such as switch mode power supply (SMPS). Its low R\(_{DS(on)\) can help reduce switching losses and improve the efficiency of the entire power supply.
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As a single N-channel MOSFET, NDT451N-VB has become an ideal choice for power management and switch control in many fields through its superior electrical performance and compact package design. In power management, LED lighting, motor control and consumer electronics, it can help developers achieve efficient and reliable circuit design.
1. **Power management system**
NDT451N-VB is very suitable for power management modules, especially in DC-DC converters and load switching circuits. Due to its low on-resistance and high current handling capability, this MOSFET can effectively improve the energy efficiency of the system and reduce power consumption.
2. **Portable electronic devices**
This MOSFET is widely used in consumer electronic devices such as smartphones, tablets and portable chargers as a power switch. Its compact SOT223 package design provides the necessary space optimization for portable products.
3. **LED driver**
In LED lighting applications, NDT451N-VB can be used in LED driver circuits to achieve efficient dimming and switching control through its fast switching performance. Its excellent conduction performance can meet the needs of high-brightness LEDs.
4. **Motor control**
The device is also suitable for the control of small motors, such as in power tools and household appliances. Its fast switching characteristics enable quick start and stop of the motor, improving the response speed of the system.
5. **High-frequency switching power supply**
The high-frequency performance of NDT451N-VB makes it suitable for high-frequency switching power supply design, such as switch mode power supply (SMPS). Its low R\(_{DS(on)\) can help reduce switching losses and improve the efficiency of the entire power supply.
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As a single N-channel MOSFET, NDT451N-VB has become an ideal choice for power management and switch control in many fields through its superior electrical performance and compact package design. In power management, LED lighting, motor control and consumer electronics, it can help developers achieve efficient and reliable circuit design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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