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NDT3055V-VB Product details
Back to previous pageProduct introduction：
1. NDT3055V-VB Product Introduction
NDT3055V-VB is a high-performance **N-channel MOSFET**, packaged in **SOT223**, designed for high-voltage applications. The device has a drain-source voltage (VDS) of **60V**, a gate-source voltage (VGS) of **±20V** at maximum, and a turn-on threshold voltage (Vth) of **1.7V**, making it suitable for a variety of drive circuits. The NDT3055V-VB has an on-resistance (RDS(ON)) of **85mΩ@VGS=4.5V** and **76mΩ@VGS=10V**, showing good conductivity and efficiency when the maximum drain current (ID) reaches **4.5A**. The use of **Trench technology** gives it lower switching losses in switching operations, making it suitable for a variety of power management and conversion applications.
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NDT3055V-VB is a high-performance **N-channel MOSFET**, packaged in **SOT223**, designed for high-voltage applications. The device has a drain-source voltage (VDS) of **60V**, a gate-source voltage (VGS) of **±20V** at maximum, and a turn-on threshold voltage (Vth) of **1.7V**, making it suitable for a variety of drive circuits. The NDT3055V-VB has an on-resistance (RDS(ON)) of **85mΩ@VGS=4.5V** and **76mΩ@VGS=10V**, showing good conductivity and efficiency when the maximum drain current (ID) reaches **4.5A**. The use of **Trench technology** gives it lower switching losses in switching operations, making it suitable for a variety of power management and conversion applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | 76mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT223 | Single-N | 60V | 1.7V | 4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT223 | Single-N |
II. Detailed parameter description
| **Parameter name** | **Specification** | **Description** |
|----------------------|------------------------------|----------------------------------------------|
| **Model** | NDT3055V-VB | |
| **Package type** | SOT223 | Small surface mount package, suitable for space-constrained circuit design|
| **Configuration** | Single N-channel | Suitable for unidirectional current flow control|
| **Drain-source voltage (VDS)** | 60V | Maximum drain-source voltage|
| **Gate-source voltage (VGS)** | ±20V | Maximum gate voltage to ensure reliable driving of the device|
| **Turning-on threshold voltage (Vth)** | 1.7V | Minimum voltage required to turn on the N-channel|
| **On-resistance (RDS(ON))** | 85mΩ @ VGS=4.5V | VGS=4.5V |
| | 76mΩ @ VGS=10V | On-resistance at VGS=10V|
| **Drain current (ID)** | 4.5A | Maximum drain current|
| **Technology** | Trench | Improved conductivity and switching efficiency|
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| **Parameter name** | **Specification** | **Description** |
|----------------------|------------------------------|----------------------------------------------|
| **Model** | NDT3055V-VB | |
| **Package type** | SOT223 | Small surface mount package, suitable for space-constrained circuit design|
| **Configuration** | Single N-channel | Suitable for unidirectional current flow control|
| **Drain-source voltage (VDS)** | 60V | Maximum drain-source voltage|
| **Gate-source voltage (VGS)** | ±20V | Maximum gate voltage to ensure reliable driving of the device|
| **Turning-on threshold voltage (Vth)** | 1.7V | Minimum voltage required to turn on the N-channel|
| **On-resistance (RDS(ON))** | 85mΩ @ VGS=4.5V | VGS=4.5V |
| | 76mΩ @ VGS=10V | On-resistance at VGS=10V|
| **Drain current (ID)** | 4.5A | Maximum drain current|
| **Technology** | Trench | Improved conductivity and switching efficiency|
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Domain and module applications：
III. Application fields and module examples
1. **Power management system**:
NDT3055V-VB can be widely used in **switching power supplies** and **voltage regulation modules**. With its excellent switching performance and low on-resistance, it can achieve efficient energy conversion while reducing the heat loss of the system. This device plays an important role in the power management of industrial and consumer electronics.
2. **LED drive circuit**:
This MOSFET is used as a drive switch in **LED lighting systems** to effectively control the working state of LEDs. Its fast switching characteristics and low on-resistance enable it to provide stable current and low power consumption in applications that require efficient control of LED brightness.
3. **Power tools and home appliances**:
In **power tools** and **small home appliances**, NDT3055V-VB can be used as a power switch to control the start and stop of motors or heating elements, ensuring efficient operation of the equipment and improving safety. Its compact package design also makes it suitable for devices with limited space.
4. **Portable devices**:
Due to its small SOT223 package, the NDT3055V-VB is ideal for power management in **portable consumer electronics**, such as mobile phones and portable audio systems. This MOSFET helps achieve long battery life and ensures low energy consumption when switching between power sources.
5. **Automotive electronics**:
In **automotive power management** systems, the NDT3055V-VB can be used to control motors, relays, and other loads. Its high withstand voltage characteristics enable it to provide reliable performance in the automotive environment and can cope with the complex electrical needs of the vehicle.
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The NDT3055V-VB is a powerful N-channel MOSFET that excels in a variety of power management and conversion applications with its **high voltage tolerance**, **low on-resistance**, and **small package**, making it an indispensable component in the design of modern electronic products.
1. **Power management system**:
NDT3055V-VB can be widely used in **switching power supplies** and **voltage regulation modules**. With its excellent switching performance and low on-resistance, it can achieve efficient energy conversion while reducing the heat loss of the system. This device plays an important role in the power management of industrial and consumer electronics.
2. **LED drive circuit**:
This MOSFET is used as a drive switch in **LED lighting systems** to effectively control the working state of LEDs. Its fast switching characteristics and low on-resistance enable it to provide stable current and low power consumption in applications that require efficient control of LED brightness.
3. **Power tools and home appliances**:
In **power tools** and **small home appliances**, NDT3055V-VB can be used as a power switch to control the start and stop of motors or heating elements, ensuring efficient operation of the equipment and improving safety. Its compact package design also makes it suitable for devices with limited space.
4. **Portable devices**:
Due to its small SOT223 package, the NDT3055V-VB is ideal for power management in **portable consumer electronics**, such as mobile phones and portable audio systems. This MOSFET helps achieve long battery life and ensures low energy consumption when switching between power sources.
5. **Automotive electronics**:
In **automotive power management** systems, the NDT3055V-VB can be used to control motors, relays, and other loads. Its high withstand voltage characteristics enable it to provide reliable performance in the automotive environment and can cope with the complex electrical needs of the vehicle.
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The NDT3055V-VB is a powerful N-channel MOSFET that excels in a variety of power management and conversion applications with its **high voltage tolerance**, **low on-resistance**, and **small package**, making it an indispensable component in the design of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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