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NDS7003P-VB Product details
Back to previous pageProduct introduction：
1. NDS7003P-VB Product Introduction
NDS7003P-VB is a high-performance **dual P-channel power MOSFET** designed in a compact **SOT23-6 package** and optimized for low-voltage and medium-current applications. Its maximum drain-source voltage (VDS) is **-60V** and can handle a drain current of up to **-4.5A**. The device has an on-resistance of only **85mΩ** at a gate voltage of 4.5V, which drops to **70mΩ** at 10V, giving it significant advantages in high-efficiency power management and switch control applications. The NDS7003P-VB uses **trench technology (Trench Technology)** to improve switching speed and conduction efficiency, making it suitable for a wide range of electronic applications, including power supplies, LED drivers, and load switches.
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NDS7003P-VB is a high-performance **dual P-channel power MOSFET** designed in a compact **SOT23-6 package** and optimized for low-voltage and medium-current applications. Its maximum drain-source voltage (VDS) is **-60V** and can handle a drain current of up to **-4.5A**. The device has an on-resistance of only **85mΩ** at a gate voltage of 4.5V, which drops to **70mΩ** at 10V, giving it significant advantages in high-efficiency power management and switch control applications. The NDS7003P-VB uses **trench technology (Trench Technology)** to improve switching speed and conduction efficiency, making it suitable for a wide range of electronic applications, including power supplies, LED drivers, and load switches.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -60V | -1.7V | -4.5A | 70mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -60V | -1.7V | -4.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P | -60V | -1.7V | -4.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-P+P |
II. NDS7003P-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|--------------------|---------------------|--------------------------------------------------|
| **Package** | SOT23-6 | Compact package, suitable for applications with limited space. |
| **Configuration** | Dual-P | Two P-channel MOSFETs are provided at the same time, which facilitates design flexibility. |
| **Drain-Source Voltage (VDS)** | -60V | Maximum negative voltage that can be tolerated, suitable for a variety of load control applications. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate-source voltage, suitable for a variety of control logics. |
| **Threshold Voltage (Vth)** | -1.7V | Gate voltage when the MOSFET is turned on, ensuring high-sensitivity control performance. |
| **RDS(ON)** | 85mΩ (@ VGS=4.5V) | Excellent performance at lower voltages, helping to reduce power losses. |
| **RDS(ON)** | 70mΩ (@ VGS=10V) | Lower on-resistance, suitable for high current applications, further improving efficiency. |
| **Drain Current(ID)** | -4.5A | Maximum current that can be handled, suitable for medium power applications. |
| **Technology** | Trench | Provides efficient electrical performance and superior thermal management capabilities. |
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| **Parameter** | **Value** | **Description** |
|--------------------|---------------------|--------------------------------------------------|
| **Package** | SOT23-6 | Compact package, suitable for applications with limited space. |
| **Configuration** | Dual-P | Two P-channel MOSFETs are provided at the same time, which facilitates design flexibility. |
| **Drain-Source Voltage (VDS)** | -60V | Maximum negative voltage that can be tolerated, suitable for a variety of load control applications. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate-source voltage, suitable for a variety of control logics. |
| **Threshold Voltage (Vth)** | -1.7V | Gate voltage when the MOSFET is turned on, ensuring high-sensitivity control performance. |
| **RDS(ON)** | 85mΩ (@ VGS=4.5V) | Excellent performance at lower voltages, helping to reduce power losses. |
| **RDS(ON)** | 70mΩ (@ VGS=10V) | Lower on-resistance, suitable for high current applications, further improving efficiency. |
| **Drain Current(ID)** | -4.5A | Maximum current that can be handled, suitable for medium power applications. |
| **Technology** | Trench | Provides efficient electrical performance and superior thermal management capabilities. |
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Domain and module applications：
3. Application fields and module examples
1. **Power management and control**
NDS7003P-VB performs well in power management applications, especially for load switches and synchronous rectifiers in switching power supplies. Its efficient switching characteristics and low on-resistance can effectively reduce energy loss and improve overall system efficiency.
2. **LED lighting driver**
This MOSFET is suitable for LED lighting driver applications. As an efficient switching element, it can provide reliable performance in LED driver modules that require high current and low power consumption. This makes it very suitable for high-brightness LED lamps and intelligent lighting systems.
3. **Motor control**
In small motor control applications, NDS7003P-VB can be used as a high-side or low-side switch to ensure efficient motor drive. Its current capability and voltage resistance make it suitable for a variety of power tools and consumer electronics.
4. **Load switch applications**
The design of NDS7003P-VB is also very suitable for various load switch applications, providing efficient control when the load is connected and disconnected. This is very important for applications that require fast switching response and low power loss, such as home automation equipment and power switching modules.
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With its excellent performance and compact package design, NDS7003P-VB demonstrates strong flexibility and efficiency in a variety of electronic applications, and is an ideal choice for power management, LED drive, motor control and load switching.
1. **Power management and control**
NDS7003P-VB performs well in power management applications, especially for load switches and synchronous rectifiers in switching power supplies. Its efficient switching characteristics and low on-resistance can effectively reduce energy loss and improve overall system efficiency.
2. **LED lighting driver**
This MOSFET is suitable for LED lighting driver applications. As an efficient switching element, it can provide reliable performance in LED driver modules that require high current and low power consumption. This makes it very suitable for high-brightness LED lamps and intelligent lighting systems.
3. **Motor control**
In small motor control applications, NDS7003P-VB can be used as a high-side or low-side switch to ensure efficient motor drive. Its current capability and voltage resistance make it suitable for a variety of power tools and consumer electronics.
4. **Load switch applications**
The design of NDS7003P-VB is also very suitable for various load switch applications, providing efficient control when the load is connected and disconnected. This is very important for applications that require fast switching response and low power loss, such as home automation equipment and power switching modules.
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With its excellent performance and compact package design, NDS7003P-VB demonstrates strong flexibility and efficiency in a variety of electronic applications, and is an ideal choice for power management, LED drive, motor control and load switching.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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