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NDS7002N-VB Product details
Back to previous pageProduct introduction：
1. NDS7002N-VB Product Introduction
NDS7002N-VB is a high-efficiency dual N-channel power MOSFET in a **SOT23-6** package, suitable for low-power and compact applications. The device has a **maximum drain-source voltage (VDS)** of **60V**, and a gate voltage (VGS) of ±20V. Its **turn-on voltage (Vth)** is **1.7V**, and it has a reasonable on-resistance at different gate voltages, where the on-resistance is **3000mΩ** and **1800mΩ (RDS(ON))** at gate voltages of **4.5V** and **10V**, respectively. The maximum drain current (ID) is **0.35A**, and it is manufactured using **trench technology** to provide higher efficiency and performance.
The design of NDS7002N-VB is particularly suitable for electronic devices that require low power consumption and high performance, and can meet the requirements of modern electronic products for space and energy efficiency.
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NDS7002N-VB is a high-efficiency dual N-channel power MOSFET in a **SOT23-6** package, suitable for low-power and compact applications. The device has a **maximum drain-source voltage (VDS)** of **60V**, and a gate voltage (VGS) of ±20V. Its **turn-on voltage (Vth)** is **1.7V**, and it has a reasonable on-resistance at different gate voltages, where the on-resistance is **3000mΩ** and **1800mΩ (RDS(ON))** at gate voltages of **4.5V** and **10V**, respectively. The maximum drain current (ID) is **0.35A**, and it is manufactured using **trench technology** to provide higher efficiency and performance.
The design of NDS7002N-VB is particularly suitable for electronic devices that require low power consumption and high performance, and can meet the requirements of modern electronic products for space and energy efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 0.35A | 1800mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 0.35A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N | 60V | 1.7V | 0.35A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+N |
2. NDS7002N-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|----------------------|---------------------|-------------------------------------------------------|
| **Package** | SOT23-6 | Small SOT23-6 package, suitable for compact circuit design. |
| **Configuration** | Dual-N Channel | Two N-type MOSFETs, suitable for applications requiring dual-channel control. |
| **Drain-Source Voltage (VDS)** | 60V | Maximum drain-source voltage, suitable for medium voltage applications. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate-source voltage range, supports wide gate voltage input. |
| **Turning Voltage (Vth)** | 1.7V | Gate voltage threshold at which the device starts to conduct. |
| **On-resistance (RDS(ON))** | 3000mΩ @ VGS=4.5V | On-resistance at 4.5V gate voltage, suitable for low power applications. |
| **On-resistance (RDS(ON))** | 1800mΩ @ VGS=10V | On-resistance at 10V gate voltage, further reducing power consumption. |
| **Drain current (ID)** | 0.35A | Maximum continuous drain current, suitable for light load applications. |
| **Technology** | Trench | Trench technology, providing lower conduction loss and higher efficiency. |
| **Application temperature range** | -55°C ~ +150°C | Wide operating temperature range, suitable for a variety of application scenarios. |
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| **Parameter** | **Value** | **Description** |
|----------------------|---------------------|-------------------------------------------------------|
| **Package** | SOT23-6 | Small SOT23-6 package, suitable for compact circuit design. |
| **Configuration** | Dual-N Channel | Two N-type MOSFETs, suitable for applications requiring dual-channel control. |
| **Drain-Source Voltage (VDS)** | 60V | Maximum drain-source voltage, suitable for medium voltage applications. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate-source voltage range, supports wide gate voltage input. |
| **Turning Voltage (Vth)** | 1.7V | Gate voltage threshold at which the device starts to conduct. |
| **On-resistance (RDS(ON))** | 3000mΩ @ VGS=4.5V | On-resistance at 4.5V gate voltage, suitable for low power applications. |
| **On-resistance (RDS(ON))** | 1800mΩ @ VGS=10V | On-resistance at 10V gate voltage, further reducing power consumption. |
| **Drain current (ID)** | 0.35A | Maximum continuous drain current, suitable for light load applications. |
| **Technology** | Trench | Trench technology, providing lower conduction loss and higher efficiency. |
| **Application temperature range** | -55°C ~ +150°C | Wide operating temperature range, suitable for a variety of application scenarios. |
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Domain and module applications：
III. Application Fields and Module Examples
1. **Signal Switching**
NDS7002N-VB is commonly used in **Signal Switching Circuits**, which can control the on and off of signals at low power consumption, and is suitable for devices that require high sensitivity and small size.
**Example:** In wireless communication modules, MOSFET is used to switch control signal paths to ensure signal integrity and reliability.
2. **LED Driver Circuits**
In **LED Driver Circuits**, NDS7002N-VB can be used to control the on and off state of LEDs, providing stable current to ensure consistent brightness of LEDs.
**Example:** In small LED lamps, MOSFET can be used for fast switching and dimming to achieve multiple lighting modes.
3. **Power Management**
NDS7002N-VB is suitable for **Power Management Modules**, providing efficient power control to ensure system stability.
**Example:** In power management of portable devices, MOSFET is used to regulate power output and optimize battery efficiency.
4. **Low-Power Motor Drives**
NDS7002N-VB can be used in **Low-Power Motor Drives** applications, providing efficient control and drive, suitable for small motor control.
**Example:** In small electric toys or home appliances, MOSFET is used to drive small motors to ensure high efficiency and low power consumption.
5. **Charge Control**
NDS7002N-VB is suitable for use in **charger circuits** to control the switch of charging current and ensure the efficiency and safety of the charging process.
**Example:** In the USB charger of mobile devices, MOSFET can be used to switch the charging state to improve charging efficiency and safety.
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NDS7002N-VB is a dual N-channel MOSFET suitable for a variety of low power applications. With its SOT23-6 package and trench technology, it is widely used in signal switching, LED driving, power management and other fields to meet the needs of modern electronic equipment for high efficiency and compact design.
1. **Signal Switching**
NDS7002N-VB is commonly used in **Signal Switching Circuits**, which can control the on and off of signals at low power consumption, and is suitable for devices that require high sensitivity and small size.
**Example:** In wireless communication modules, MOSFET is used to switch control signal paths to ensure signal integrity and reliability.
2. **LED Driver Circuits**
In **LED Driver Circuits**, NDS7002N-VB can be used to control the on and off state of LEDs, providing stable current to ensure consistent brightness of LEDs.
**Example:** In small LED lamps, MOSFET can be used for fast switching and dimming to achieve multiple lighting modes.
3. **Power Management**
NDS7002N-VB is suitable for **Power Management Modules**, providing efficient power control to ensure system stability.
**Example:** In power management of portable devices, MOSFET is used to regulate power output and optimize battery efficiency.
4. **Low-Power Motor Drives**
NDS7002N-VB can be used in **Low-Power Motor Drives** applications, providing efficient control and drive, suitable for small motor control.
**Example:** In small electric toys or home appliances, MOSFET is used to drive small motors to ensure high efficiency and low power consumption.
5. **Charge Control**
NDS7002N-VB is suitable for use in **charger circuits** to control the switch of charging current and ensure the efficiency and safety of the charging process.
**Example:** In the USB charger of mobile devices, MOSFET can be used to switch the charging state to improve charging efficiency and safety.
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NDS7002N-VB is a dual N-channel MOSFET suitable for a variety of low power applications. With its SOT23-6 package and trench technology, it is widely used in signal switching, LED driving, power management and other fields to meet the needs of modern electronic equipment for high efficiency and compact design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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