Product introduction：
1. NDS7002A-NL-VB Product Introduction
NDS7002A-NL-VB is a small, single N-channel MOSFET in SOT23-3 package, designed for low power and low current applications. The maximum drain-source voltage (V\(_{DS}\)) of this MOSFET is 60V, and the gate voltage allowable range is ±20V, ensuring its stable operation in a variety of control circuits. Its threshold voltage is 1.7V, which allows it to be turned on at a lower gate voltage. The on-resistance is 3100mΩ at V\(_{GS}\) = 4.5V and 2800mΩ at V\(_{GS}\) = 10V, which is suitable for low current applications. NDS7002A-NL-VB has a maximum continuous drain current capability of 0.3A, and uses trench technology to optimize performance, giving it good efficiency and reliability in small electronic devices.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-N |
60V |
20（±V） |
1.7V |
0.3A |
|
|
2800mΩ |
|
2. NDS7002A-NL-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-----------------------------|-----------------------------|----------------------------------|
| **Package type** | SOT23-3 | Small size package, suitable for compact design|
| **Configuration** | Single-N-Channel | For basic current switching and control|
| **V\(_{DS}\)** | 60V | Maximum voltage between drain and source|
| **V\(_{GS}\)** | ±20V | Maximum positive and negative voltage allowed by the gate|
| **V\(_{th}\)** | 1.7V | Gate-source threshold voltage|
| **R\(_{DS(on)}\)** | 3100mΩ @ V\(_{GS}\)=4.5V | On-resistance, affecting current flow efficiency|
| **R\(_{DS(on)}\)** | 2800mΩ @ V\(_{GS}\)=10V | On-resistance at higher gate voltage|
| **I\(_D\)** | 0.3A | Maximum continuous drain current|
| **Technology** | Trench process | Improves performance, reduces resistance and loss|
| **Operating temperature range** | -55°C ~ 150°C | Suitable for various environmental conditions|
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Domain and module applications：
3. Applicable fields and module applications
1. **Signal switch and control**
NDS7002A-NL-VB is very suitable for signal control and low current switching circuits. For example, it can be used as a control switch for a microprocessor to perform simple on and off functions in low power circuits.
2. **Power management of portable devices**
The small size and low power consumption of this MOSFET make it very suitable for power management circuits of small electronic products such as smart watches, sensors, and wearable devices.
3. **LED drive and control**
Although the current carrying capacity is limited, NDS7002A-NL-VB can be used to drive and control low-power LED lights, such as in indicator lights and status displays, providing efficient and stable brightness control.
4. **Battery management module**
The device also performs well in battery monitoring and low current charge management circuits, and can be used to control the battery charging path or as part of a protection circuit.
5. **Low Current Level Shifter Circuit**
In circuits that require level shifting (e.g., from low voltage logic to high voltage drive), this MOSFET enables simple and reliable shifting.
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NDS7002A-NL-VB is ideal for a variety of micro devices, signal control, and power management modules due to its compact design, low power consumption, and stable performance. Its trench process ensures high reliability in low current applications, making it an ideal choice for modern small electronic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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