Product introduction：
1. NDS336P-VB Product Introduction
NDS336P-VB is a high-performance **single-channel P-type MOSFET**, which adopts a compact **SOT-23-3 package**, suitable for space-constrained circuit design. Its **drain-source voltage (VDS)** is **-20V**, and **gate-source voltage (VGS)** is rated at ±12V, supporting a variety of low-voltage switching and load management applications. NDS336P-VB has a low **turn-on voltage (Vth)** of **-0.8V**, and provides excellent conduction performance at different gate drive voltages: **80mΩ** @ VGS = 2.5V, **65mΩ** @ VGS = 4.5V, **60mΩ** @ VGS = 10V. This MOSFET adopts **Trench technology**, which not only reduces conduction losses, but also supports continuous drain currents of up to **-4A**, which is very suitable for applications such as power management, low-voltage drives, and battery-powered devices.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P |
-20V |
12（±V） |
-0.8V |
-4A |
80mΩ |
|
60mΩ |
|
2. Detailed parameter description of NDS336P-VB
| **Parameter** | **Description** | **Value** |
|-------------------------|-----------------------------------------|---------------------|
| **Package** | SOT-23-3 | Small package suitable for compact design|
| **Configuration** | Single P-channel MOSFET | Provides single-channel control|
| **Drain-source voltage (VDS)** | Maximum withstand voltage| -20V |
| **Gate-source voltage (VGS)** | Gate withstand voltage range| ±12V |
| **Turning voltage (Vth)** | Gate turning voltage| -0.8V |
| **On-resistance (RDS(ON))** | On-resistance at VGS = 2.5V| 80mΩ |
| | On-resistance at VGS = 4.5V| 65mΩ |
| | At VGS = 10V | 60mΩ |
| **Continuous Drain Current (ID)** | Maximum Current Capability| -4A |
| **Technology** | Trench Technology| Low Loss and High Efficiency |
| **Operating Temperature Range** | Ambient Temperature Range| -55°C to 150°C |
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Domain and module applications：
3. Application fields and module examples
1. **Power management module (PMU)**
NDS336P-VB is widely used in **load switches** of battery-powered devices, such as power rail switching of smartphones, laptops and wearable devices, to ensure efficient power distribution.
2. **DC-DC converter**
In **step-down DC-DC converter**, this MOSFET can be used as an efficient synchronous rectifier to reduce conversion losses and improve the energy efficiency of the power system.
3. **Battery protection circuit**
NDS336P-VB is used in **lithium battery management system (BMS)** to prevent battery overcharge or over discharge, protect the battery life, and ensure the safety of the charging process.
4. **Motor control**
This MOSFET is also suitable for **small motor drives**, such as small current loads in drones, electric toys and household appliances, to provide efficient current control.
5. **Consumer Electronics Devices**
In the **Consumer Electronics** field, such as Bluetooth headsets and IoT devices, NDS336P-VB is used as a switching element to control the start and stop of different modules, reduce standby power consumption and extend battery life.
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The compact package and low on-resistance characteristics of NDS336P-VB make it excel in space-constrained circuit design and is an ideal choice for applications requiring high energy efficiency and low loss. Its excellent performance ensures reliable application in a variety of modules such as power management, DC-DC conversion, battery protection and small drivers.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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