Product introduction：
NDS332P-VB is a small **P-channel MOSFET** in **SOT-23-3 package**, designed for scenarios requiring low current control and low power consumption. Its maximum drain-source voltage (V\(_{DS}\)) is **-20V**, and the gate-source voltage (V\(_{GS}\)) is **±12V**. The **threshold voltage (V\(_{th}\)) of this device is -0.8V**, which allows it to operate at a lower drive voltage. Its on-resistance (R\(_{DS(ON)}\)) decreases with the increase of gate drive voltage: **80mΩ (@V\(_{GS}\)=2.5V), 65mΩ (@V\(_{GS}\)=4.5V), 60mΩ (@V\(_{GS}\)=10V)**, while supporting a maximum continuous drain current (I\(_D\)) of **-4A**. Using **trench technology**, the NDS332P-VB has efficient switching performance and is suitable for space-constrained application scenarios such as low-voltage power management in portable devices and consumer electronics.
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## 2. NDS332P-VB
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOT23-3 |
Single-P |
-20V |
12（±V） |
-0.8V |
-4A |
80mΩ |
|
60mΩ |
|
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------------|--------------------------------------------|
| **Package Type** | SOT-23-3 | Small package for compact designs|
| **Polarity** | P-channel | Suitable for negative voltage control applications|
| **V\(_{DS}\)** | -20V | Maximum drain-source voltage to support low voltage applications|
| **V\(_{GS}\)** | ±12V | Maximum gate-source voltage to ensure control flexibility|
| **V\(_{th}\)** | -0.8V | Threshold voltage, a lower gate voltage can turn it on|
| **R\(_{DS(ON)}\)** | 80mΩ (@V\(_{GS}\)=2.5V) | On-resistance, decreases with gate voltage|
| | 65mΩ (@V\(_{GS}\)=4.5V) | |
| | 60mΩ (@V\(_{GS}\)=10V) | |
| **I\(_D\)** | -4A | Maximum continuous drain current, supports high loads|
| **Operating technology** | Trench technology | With efficient switching capability and low power consumption|
| **Operating temperature range** | -55°C ~ +150°C | Meet the working requirements in harsh environments|
| **Packaging characteristics** | Small package, good heat dissipation | Improve the flexibility of use in portable devices|
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## III. NDS332P-VB
Domain and module applications：
1. **Portable Electronic Devices**
- NDS332P-VB is widely used in low-voltage power switches in portable electronic products such as mobile phones, tablets, and smart watches. Due to its low on-resistance and small package size, this MOSFET can effectively save space and extend battery life.
2. **Power Management in Consumer Electronics**
- In consumer electronic products such as chargers and adapters, NDS332P-VB can be used for power path management (such as reverse protection circuits). Its P-channel configuration enables simple load switching to optimize power efficiency.
3. **Battery Management System (BMS)**
- This device is suitable for charge and discharge management of lithium battery packs. Through low-loss conduction characteristics, it reduces energy loss in the current path and improves system reliability and battery life.
4. **Load Switch and Protection Circuit**
- In microcontroller systems, NDS332P-VB can be used to control the switch of low-voltage loads or as a reverse current protection circuit to improve system safety.
5. **Low-power embedded systems**
- In embedded systems such as IoT devices and sensor nodes, this MOSFET can operate in a low-power state and switch quickly when needed to ensure the system's responsiveness and energy efficiency.
NDS332P-VB has been widely used in consumer electronics, portable devices, battery management and other fields with its **low on-resistance, small package size and high switching efficiency**. Its compact design and high performance make it an ideal choice for space-constrained, power-sensitive applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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