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NDP610BE-VB Product details

Product introduction:

1. NDP610BE-VB Product Introduction
NDP610BE-VB is a high-efficiency single N-channel MOSFET in TO-220 package, designed for medium and low voltage high current applications. Its drain-source voltage (V\(_{DS}\)) reaches 100V, suitable for a variety of power management and switching applications. The maximum gate voltage (V\(_{GS}\)) of the device is ±20V, providing flexible drive options. The threshold voltage (V\(_{th}\)) is 1.8V, ensuring fast switching at lower gate voltages. The on-resistance (R\(_{DS(on)}\)) is 127mΩ at V\(_{GS}\)=10V, which makes the MOSFET perform well at the rated current (I\(_D\)) of 18A, effectively managing heat and power consumption. Using tunnel technology, NDP610BE-VB provides excellent conductivity and low conduction loss, which is very suitable for applications in power conversion and motor control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 18A 127mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. Detailed parameter description of NDP610BE-VB
| **Parameter** | **Value** | **Description** |
|-------------------------|--------------------|-------------------------------------|
| **Package** | TO-220 | Provides good heat dissipation performance and easy installation. |
| **Channel type** | Single N-channel | Suitable for high current switching applications. |
| **Drain-source voltage (V\(_{DS}\))** | 100V | Suitable for medium and low voltage applications to ensure circuit stability. |
| **Gate-source voltage (V\(_{GS}\))** | ±20V | Supports larger gate drive voltage. |
| **Threshold voltage (V\(_{th}\))** | 1.8V | Low threshold voltage, fast switching. |
| **On-resistance (R\(_{DS(on)}\))** | 127mΩ @ V\(_{GS}\)=10V | Low on-resistance, reducing power consumption and heat generation. |
| **Drain current (I\(_D\))** | 18A | Maximum continuous current supported, suitable for high-power applications. |
| **Technology** | Tunnel type (Trench) | Provides good conductivity and low conduction loss, suitable for long-term operation. |

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Domain and module applications:

III. Application fields and module examples of NDP610BE-VB
1. **Switching power supply (SMPS)**
NDP610BE-VB is very suitable for switching power supply modules, and can achieve efficient power conversion under low voltage input. Its 100V withstand voltage ensures the stability of the power supply, and is widely used in adapters, LED driver power supplies and other power conversion applications.

2. **Motor drive control**
In the field of motor drive control, this MOSFET can be used to drive DC motors and stepper motors. Its 18A rated current can meet the driving requirements of high-power motors, while the lower on-resistance reduces energy loss and heat generation.

3. **Battery management system (BMS)**
NDP610BE-VB is also widely used in battery management systems, which can efficiently control the charge and discharge of batteries, especially suitable for high current charge and discharge occasions. Its fast switching characteristics can improve the response speed of the system and ensure the safety and stability of the battery.

4. **Power Amplifier**
The characteristics of this MOSFET make it widely used in RF and audio power amplifiers. It can provide stable power output and effectively reduce distortion, making it suitable for audio amplifiers and signal processing equipment.

In summary, NDP610BE-VB performs well in medium and low voltage high current applications. Its reliability and high efficiency make it an ideal choice for power management, industrial control and battery technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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