Product introduction：
1. NDP411AE-VB Product Introduction
NDP411AE-VB is a high-efficiency single N-channel MOSFET in TO-220 package, designed for low voltage and high current applications. Its drain-source voltage (V\(_{DS}\)) is 100V, suitable for various medium and low voltage applications. The maximum gate voltage (V\(_{GS}\)) of the device can reach ±20V, providing good flexibility. It has a threshold voltage (V\(_{th}\)) of 1.8V, ensuring fast turn-on at a lower gate voltage. Its on-resistance (R\(_{DS(on)}\)) is 127mΩ (at V\(_{GS}\)=10V), which makes it have excellent thermal management performance at a rated current (I\(_D\)) of 18A. Using tunnel technology, NDP411AE-VB provides efficient conductivity and low conduction loss, suitable for a variety of power management and control applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
18A |
|
|
127mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| TO220 |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
18A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| TO220 |
Single-N |
100V |
|
1.8V |
18A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| TO220 |
Single-N |
|
|
|
|
|
|
|
2. Detailed parameter description of NDP411AE-VB
| **Parameter** | **Value** | **Description** |
|-------------------------|--------------------|-------------------------------------|
| **Package** | TO-220 | Provides good heat dissipation and easy installation. |
| **Channel type** | Single N-channel | Suitable for low voltage switching applications. |
| **Drain-source voltage (V\(_{DS}\))** | 100V | Suitable for medium and low voltage applications to ensure circuit stability. |
| **Gate-source voltage (V\(_{GS}\))** | ±20V | Supports larger gate drive voltage. |
| **Threshold voltage (V\(_{th}\))** | 1.8V | Low threshold voltage to increase switching speed. |
| **On-resistance (R\(_{DS(on)}\))** | 127mΩ @ V\(_{GS}\)=10V | Lower on-resistance, lower power consumption and heat generation. |
| **Drain current (I\(_D\))** | 18A | Maximum continuous current supported, suitable for high power applications. |
| **Technology** | Tunnel type (Trench) | Provides good conductivity and low conduction loss, suitable for long-term operation. |
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Domain and module applications：
III. Application fields and module examples of NDP411AE-VB
1. **Switching Power Supply (SMPS)**
NDP411AE-VB is very suitable for switching power supply modules, which can achieve efficient power conversion at low voltage input. Its 100V withstand voltage ensures the stability of the power supply and is widely used in adapters, LED driver power supplies and other power conversion applications.
2. **Motor Drive Control**
In the field of motor drive control, this MOSFET can be used in DC motor drive and servo control systems. Its high rated current (18A) enables it to handle medium power loads, while its low on-resistance reduces energy loss and heat generation.
3. **Battery Management System (BMS)**
NDP411AE-VB is also widely used in battery management systems, which can efficiently control battery charging and discharging. Its fast switching characteristics can improve the response speed of the system and ensure the safety and stability of the battery.
4. **Power Amplifier**
The characteristics of this MOSFET make it widely used in RF and audio power amplifiers, providing stable power output and effectively reducing distortion.
In summary, NDP411AE-VB performs well in low-voltage and high-current applications. Its reliability and high efficiency make it an ideal choice for power management, industrial control and battery technology.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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