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NDP410B-VB Product details

Product introduction:

1. NDP410B-VB Product Introduction
NDP410B-VB is a high-efficiency **single N-channel power MOSFET** in a **TO-220 package**, designed for medium and low voltage applications. Its maximum drain-source voltage is **100V**, providing reliable performance in power management and switching applications. Under a 10V gate drive, the MOSFET has an **on-resistance (RDS(ON)) of 127mΩ**, can carry a drain current of up to **18A**, and has excellent conductivity. Based on **trench technology (Trench Technology)**, NDP410B-VB provides low on-resistance and excellent thermal management, suitable for operation in a variety of electrical environments.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 18A 127mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N
2. NDP410B-VB Detailed Parameter Description

| **Parameter** | **Value** | **Description** |
|--------------------|---------------------|--------------------------------------------------|
| **Package** | TO-220 | Provides good heat dissipation and insulation characteristics, suitable for various applications. |
| **Configuration** | Single N-channel (Single-N) | Single channel MOSFET suitable for medium and low voltage and high current applications. |
| **Drain-Source Voltage (VDS)** | 100V | Maximum drain-source voltage to ensure circuit safety and reliability. |
| **Gate-Source Voltage (VGS)** | ±20V | Maximum gate-source voltage allowed to increase design flexibility. |
| **Threshold Voltage (Vth)** | 1.8V | Gate turn-on voltage to ensure reliable turn-on under specific control voltage. |
| **On-resistance (RDS(ON))** | 127mΩ (@ VGS=10V) | On-resistance at standard drive voltage, affecting power loss and efficiency. |
| **Drain current (ID)** | 18A | Maximum drain current allowed under given circumstances. |
| **Technology** | Trench | Provides superior electrical performance and thermal management, suitable for high-performance applications. |

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Domain and module applications:

3. Application fields and module examples

1. **Power management**
NDP410B-VB is widely used in switching power supplies (SMPS), capable of handling input voltages up to 100V, suitable for applications such as AC-DC converters and DC-DC converters, ensuring high efficiency and stability of power conversion.

2. **Motor control**
This MOSFET can be used in motor drive applications, supporting currents up to 18A, and is very suitable for starting and controlling small motors. Its low on-resistance helps reduce power losses and improves the efficiency and response speed of the motor.

3. **LED lighting drive**
In LED lighting systems, NDP410B-VB can be used as a switching element for driving current, ensuring efficient and stable current control, especially suitable for high-power LED modules.

4. **Inverter**
NDP410B-VB is also suitable for solar inverters and other power conversion systems. It can effectively manage and convert power from solar panels or other renewable energy sources to improve system efficiency and reliability.

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With its superior electrical performance, excellent current handling capability and reliable packaging design, NDP410B-VB has shown a wide range of application potential in power management, lighting control and motor drive.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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