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NDP408B-VB Product details

Product introduction:



NDP408B-VB is a high-performance single N-channel MOSFET in a **TO-220 package**, designed for medium voltage applications with a maximum drain-source voltage (V\(_{DS}\)) of **100V**. The device has a threshold voltage (V\(_{th}\)) of **1.8V**, which allows it to be turned on at a lower gate drive voltage, enhancing system flexibility. At a gate drive of 10V, its on-resistance (R\(_{DS(ON)}\)) is **127 milliohms**, and it can support a continuous drain current (I\(_D\)) of up to **18A**, giving it high power handling capabilities in multiple applications. The NDP408B-VB uses **trench technology** to achieve low on-resistance and high switching speed, making it suitable for high-efficiency power management and motor control.

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## 2. NDP408B-VB

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220 Single-N 100V 1.8V 18A 127mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220 Single-N 100V 1.8V 18A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220 Single-N 100V 1.8V 18A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220 Single-N


| **Parameter** | **Value** | **Description** |
|---------------------|-----------------------------|------------------------------------------|
| **Package Type** | TO-220 | Has good heat dissipation characteristics, suitable for high-power applications|
| **Polarity** | N-channel | Current channel formed by N-type semiconductor when turned on|
| **V\(_{DS}\)** | 100V | Maximum drain-source voltage, suitable for medium-voltage circuit applications|
| **V\(_{GS}\)** | ±20V | Maximum gate-source voltage, allowing high-voltage drive|
| **V\(_{th}\)** | 1.8V | Gate threshold voltage, refers to the voltage at which the gate starts to turn on|
| **R\(_{DS(ON)}\)** | 127mΩ (@V\(_{GS}\)=10V) | On-resistance affects power consumption and efficiency|
| **I\(_D\)** | 18A | Maximum continuous drain current determines load capacity|
| **Working technology** | Trench technology | Provides low on-resistance and high switching speed|
| **Operating temperature range** | -55°C ~ +150°C | Adapts to different environmental conditions and ensures stability|
| **Packaging characteristics** | Efficient heat dissipation design | Enhances the device's thermal management capabilities under high power|

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## III. NDP408B-VB

Domain and module applications:



1. **Power Management System**
- NDP408B-VB is very suitable for switching power supplies, DC-DC converters and power adapters. It can work stably at high efficiency, maximize power conversion efficiency and reduce energy loss. Its good current carrying capacity and low on-resistance make it an ideal choice for power modules.

2. **Motor Drive Control**
- This MOSFET is suitable for various motor drive applications, such as DC motor and stepper motor control. Its high current capability allows it to easily handle the start-up and operation of high-load motors, ensuring that the motors operate in a state of high efficiency and reliability.

3. **LED Drive Circuit**
- NDP408B-VB can be used as a switching device in LED drive circuits to provide efficient power management and control. Its low on-resistance can effectively reduce heat generation and improve overall system efficiency in LED lighting applications.

4. **Consumer Electronics**
- In various consumer electronics products (such as TVs, audio, etc.), NDP408B-VB can be used as a power switch to provide reliable power management and efficient current control, improving product performance and user experience.

5. **Industrial Automation and Control**
- Suitable for PLC (Programmable Logic Controller) and other industrial automation equipment, NDP408B-VB provides high performance and stability in various control modules to ensure reliable operation in industrial environments.

Through these application examples, it can be seen that NDP408B-VB has broad application prospects in multiple fields and modules due to its **medium voltage capability, low on-resistance and high power handling capability**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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