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NDF11N50ZH-VB Product details
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1. NDF11N50ZH-VB Product Introduction
NDF11N50ZH-VB is a high-performance **single N-channel power MOSFET** in a **TO-220F package**, designed for high voltage and high current applications. Its maximum drain-source voltage is **550V**, providing good voltage protection capabilities in the working environment. The MOSFET has an **260mΩ on-resistance (RDS(ON))** at a 10V gate drive and supports a maximum drain current of up to **18A**, making it excellent in current handling. Based on **Planar Technology**, NDF11N50ZH-VB ensures high efficiency and reliability, and is very suitable for operation in a variety of electrical environments.
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NDF11N50ZH-VB is a high-performance **single N-channel power MOSFET** in a **TO-220F package**, designed for high voltage and high current applications. Its maximum drain-source voltage is **550V**, providing good voltage protection capabilities in the working environment. The MOSFET has an **260mΩ on-resistance (RDS(ON))** at a 10V gate drive and supports a maximum drain current of up to **18A**, making it excellent in current handling. Based on **Planar Technology**, NDF11N50ZH-VB ensures high efficiency and reliability, and is very suitable for operation in a variety of electrical environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | 260mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 550V | 3V | 18A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
II. NDF11N50ZH-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|--------------------|---------------------|--------------------------------------------------|
| **Package** | TO-220F | Full plastic package, providing excellent thermal management and insulation performance. |
| **Configuration** | Single N-channel (Single-N) | Single channel MOSFET suitable for high voltage and high current applications. |
| **Drain-Source Voltage (VDS)** | 550V | Maximum drain-source voltage to ensure safety in high voltage applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Maximum allowed gate-source voltage to support more flexible design. |
| **Threshold Voltage (Vth)** | 3V | Gate turn-on voltage to ensure reliable turn-on under specific control voltage. |
| **On-resistance (RDS(ON))** | 260mΩ (@ VGS=10V) | On-resistance at standard drive voltage, affecting power loss and conversion efficiency. |
| **Drain current (ID)** | 18A | Maximum drain current that can be sustained under specified conditions. |
| **Technology** | Planar | Provides good thermal performance and reliable electrical characteristics. |
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| **Parameter** | **Value** | **Description** |
|--------------------|---------------------|--------------------------------------------------|
| **Package** | TO-220F | Full plastic package, providing excellent thermal management and insulation performance. |
| **Configuration** | Single N-channel (Single-N) | Single channel MOSFET suitable for high voltage and high current applications. |
| **Drain-Source Voltage (VDS)** | 550V | Maximum drain-source voltage to ensure safety in high voltage applications. |
| **Gate-Source Voltage (VGS)** | ±30V | Maximum allowed gate-source voltage to support more flexible design. |
| **Threshold Voltage (Vth)** | 3V | Gate turn-on voltage to ensure reliable turn-on under specific control voltage. |
| **On-resistance (RDS(ON))** | 260mΩ (@ VGS=10V) | On-resistance at standard drive voltage, affecting power loss and conversion efficiency. |
| **Drain current (ID)** | 18A | Maximum drain current that can be sustained under specified conditions. |
| **Technology** | Planar | Provides good thermal performance and reliable electrical characteristics. |
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Domain and module applications：
3. Application fields and module examples
1. **Switching Power Supply (SMPS)**
NDF11N50ZH-VB is suitable for the main switching element of the switching power supply. It can safely handle the high voltage input of 550V, ensure high efficiency and stability of power conversion, and is very suitable for use in AC-DC converters.
2. **Motor Driver**
This MOSFET can be used in motor control and drive applications, supporting currents up to 18A, suitable for starting and running medium and high power motors. Its low on-resistance ensures efficient current transfer and reduces heat loss.
3. **LED Drive Circuit**
In LED lighting applications, NDF11N50ZH-VB can be used for driving current control, especially in high-power LED modules. Its stability and high current handling capability make it excellent in lighting systems.
4. **Inverter and Power Management System**
This MOSFET is widely used in inverter design, especially for power conversion in solar and wind energy systems. Its high voltage and high current capabilities are suitable for high-voltage protection circuits in battery management systems, ensuring system safety and reliability.
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With its high voltage resistance, excellent current handling capability and reliable package design, NDF11N50ZH-VB has shown wide application potential in power management, lighting control, industrial automation and other fields.
1. **Switching Power Supply (SMPS)**
NDF11N50ZH-VB is suitable for the main switching element of the switching power supply. It can safely handle the high voltage input of 550V, ensure high efficiency and stability of power conversion, and is very suitable for use in AC-DC converters.
2. **Motor Driver**
This MOSFET can be used in motor control and drive applications, supporting currents up to 18A, suitable for starting and running medium and high power motors. Its low on-resistance ensures efficient current transfer and reduces heat loss.
3. **LED Drive Circuit**
In LED lighting applications, NDF11N50ZH-VB can be used for driving current control, especially in high-power LED modules. Its stability and high current handling capability make it excellent in lighting systems.
4. **Inverter and Power Management System**
This MOSFET is widely used in inverter design, especially for power conversion in solar and wind energy systems. Its high voltage and high current capabilities are suitable for high-voltage protection circuits in battery management systems, ensuring system safety and reliability.
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With its high voltage resistance, excellent current handling capability and reliable package design, NDF11N50ZH-VB has shown wide application potential in power management, lighting control, industrial automation and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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