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NDF08N50Z-VB Product details

Product introduction:

1. NDF08N50Z-VB Product Introduction
NDF08N50Z-VB is a **single N-channel MOSFET** in **TO-220F package**, designed for high voltage and high current load applications. The device has a **650V drain-source voltage (VDS)** and a ±30V gate-source voltage (VGS), suitable for high voltage applications such as power conversion and motor drive. The on-resistance (RDS(ON)) of this MOSFET is **680mΩ**, and it exhibits excellent conduction efficiency and thermal performance at a maximum drain current of **12A**. The **planar process technology** (Plannar) it uses ensures the reliability and stability of the device, making it suitable for long-term operation.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 12A 680mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 12A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
II. NDF08N50Z-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|--------------------|------------------------|------------------------------------------|
| **Package Type** | TO-220F | Provides good heat dissipation and is suitable for through-hole soldering applications. |
| **MOSFET Configuration** | Single N-channel | High-efficiency current control for a variety of load applications. |
| **Drain-Source Voltage (VDS)** | 650V | Supports high-voltage applications such as power supplies and inverters. |
| **Gate-Source Voltage (VGS)** | ±30V | High gate drive margin for enhanced control capabilities. |
| **Turning Voltage (Vth)** | 3.5V | When the gate voltage reaches this value, the MOSFET begins to turn on. |
| **On-resistance (RDS(ON))** | 680mΩ @ VGS=10V | Reasonable RDS(ON) suitable for a variety of power management applications. |
| **Drain current (ID)** | 12A | Maximum continuous drain current, suitable for high current loads. |
| **Technology type** | Planar process (Plannar) | Provides stable switching performance and long life. |

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Domain and module applications:

3. Application fields and module examples
1. **Power management and converter**:
- NDF08N50Z-VB can be widely used in **switching power supplies (SMPS)** for high-voltage DC power conversion and management. Its drain-source voltage of up to 650V and low on-resistance ensure the efficiency and reliability of the power system.
- In **adapters and chargers**, as the power switch control part, improve the power conversion efficiency, especially in applications requiring high power output.

2. **Motor control**:
- This MOSFET is suitable for **motor drive**, such as **DC motor and stepper motor control**. Its maximum drain current capability of 12A enables it to handle large current loads and meet the needs of motor start-stop and speed regulation.
- In **industrial automation**, as part of the motor drive module, it provides precise current control and switching performance to ensure efficient operation of the motor system.

3. **Photovoltaic and inverter applications**:
- NDF08N50Z-VB can be used as a switching device in **photovoltaic inverters** to convert the DC power generated by photovoltaic cells into AC power. Its high voltage capability and stability make it suitable for complex power electronic systems.
- In addition, in **uninterruptible power supply (UPS)**, as a switching element in the inverter part, it ensures stable power supply to the load during power outages.

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The high voltage and current characteristics of NDF08N50Z-VB make it suitable for power management, motor control, photovoltaic inverters and other fields, providing efficient and stable performance for various applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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