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NDF08N50ZG-VB Product details

Product introduction:

1. NDF08N50ZG-VB Product Introduction
NDF08N50ZG-VB is a high-voltage single N-channel MOSFET in TO-220F package, designed for high voltage and medium current applications. The device has a drain-source voltage (V\(_{DS}\)) of 650V, which can work stably in high voltage environment, and its maximum gate voltage (V\(_{GS}\)) can reach ±30V. It has a threshold voltage (V\(_{th}\)) of 3.5V to ensure rapid turn-on at the appropriate gate voltage. Its on-resistance (R\(_{DS(on)}\)) is 830mΩ (at V\(_{GS}\)=10V), which enables the device to maintain good thermal management performance at the rated current (I\(_D\)) of 10A. Using planar technology, the device not only has efficient current conduction capability, but also has excellent reliability, suitable for various high-voltage power management and control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO220F Single-N 650V 3.5V 10A 830mΩ Plannar
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO220F Single-N Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO220F Single-N 650V 3.5V 10A Plannar
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO220F Single-N 650V 3.5V 10A Plannar
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO220F Single-N
2. Detailed parameter description of NDF08N50ZG-VB
| **Parameter** | **Value** | **Description** |
|-------------------------|--------------------|-------------------------------------|
| **Package** | TO-220F | Standard power package, suitable for heat dissipation and installation. |
| **Channel type** | Single N-channel | Suitable for high voltage switching applications. |
| **Drain-source voltage (V\(_{DS}\))** | 650V | Suitable for high voltage occasions to ensure system stability. |
| **Gate-source voltage (V\(_{GS}\))** | ±30V | Supports large gate drive to improve switching efficiency. |
| **Threshold voltage (V\(_{th}\))** | 3.5V | Low threshold voltage to improve switching speed. |
| **On-resistance (R\(_{DS(on)}\))** | 830mΩ @ V\(_{GS}\)=10V | Lower on-resistance, lower power consumption and heat generation. |
| **Drain current (I\(_D\))** | 10A | Maximum continuous current supported, suitable for medium power applications. |
| **Technology** | Plannar | Provides good characteristics and high voltage capability, suitable for long-term operation. |

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Domain and module applications:

III. Application fields and module examples of NDF08N50ZG-VB
1. **Switching Power Supply (SMPS)**
NDF08N50ZG-VB is particularly suitable for switching power supply modules, and can provide efficient power conversion under high voltage input. Its 650V withstand voltage makes it perform well in applications such as power adapters and LED drivers, ensuring stable operation of the circuit.

2. **Industrial Automation and Motor Drive**
In the field of industrial automation, this MOSFET is often used in DC motor drive and transmission control, and can handle high voltage and medium current applications. Its fast switching characteristics make the motor start and brake responsive, suitable for various automation equipment.

3. **Photovoltaic Inverter**
NDF08N50ZG-VB is widely used in photovoltaic inverters, which can effectively convert the DC power output of the solar system into AC power. In the high-voltage switch section of the inverter, the device can withstand inputs up to 650V, ensuring high efficiency and safety of the photovoltaic system.

4. **High-voltage power supply and protection circuit**
The high voltage withstand characteristics of this MOSFET make it widely used in high-voltage power supplies and protection circuits, such as in power overload protection and short-circuit protection circuits, which can respond quickly to prevent equipment damage.

In summary, the NDF08N50ZG-VB performs well in medium-power applications in high-voltage environments, and its reliability and high efficiency make it an ideal choice for power management, industrial control and renewable energy fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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