NDF05N50ZG-VB Product details
Product introduction:
NDF05N50ZG-VB is a high-voltage N-channel MOSFET packaged in **TO-220F**, designed for applications requiring high blocking voltage and low switching losses. The device has a **maximum drain-source voltage (V_DS)** of **650V**, and has a **gate-source voltage (V_GS)** tolerance of ±30V, which can provide good high-voltage operation stability. The MOSFET adopts **planar technology (Plannar Technology)**, and when **V_GS = 10V**, the on-resistance is **1100mΩ**, and can support a maximum drain current of **7A**. The structure and characteristics of this device make it very suitable for a variety of power management and high-voltage conversion systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | 1100mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 7A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
| **Parameter** | **Value** | **Description** |
|--------------------|-----------------------------|--------------------------------------------------|
| **Package** | TO-220F | Full plastic package structure, enhanced heat dissipation and insulation|
| **Configuration** | Single-N-Channel | Suitable for high-speed switching and power conversion applications|
| **Drain-source voltage (V_DS)** | 650V | Maximum withstand drain-source voltage, can be used for high-voltage power supply circuits|
| **Gate-source voltage (V_GS)** | ±30V | Maximum allowed gate-source drive voltage range|
| **Turning voltage (V_th)** | 3.5V | Minimum gate drive voltage for MOSFET to start conducting|
| **On-resistance (R_DS(ON))** | 1100mΩ @ V_GS=10V | Characterizes the resistance in the on state, which determines the loss|
| **Drain current (I_D)** | 7A | Maximum continuous drain current|
| **Technology** | Planar process | Provides stable switching performance and high voltage characteristics|
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Domain and module applications:
**1. Power management module**
- Suitable for **LED driver power** and **switching power supply (SMPS)**, its 650V high voltage capability ensures that the equipment can operate safely under high voltage input.
- Can be used for **battery management system (BMS)**, especially for systems with high input voltage requirements.
**2. Industrial control system**
- Applied to **inverter** and **motor driver**, the planar technology of MOSFET ensures high stability and low switching loss of the system.
- Can be used for **renewable energy system**, such as power conversion module of solar or wind power station.
**3. Home appliances and consumer electronics**
- In **induction cookers, air conditioners, refrigerators and other home appliances, NDF05N50ZG-VB can be used for their high voltage power supply circuits.
- In the power supply part of **TV sets and audio systems**, it provides reliable high voltage switch control.
**4. Security system**
- Suitable for power circuits and high-voltage conversion modules in **monitoring equipment** to ensure stable operation of the monitoring system.
Through its **TO-220F package**, the device improves heat dissipation while ensuring performance and has insulation protection, so it is widely used in a variety of power and control fields.
Technical support:
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