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NDF04N60ZH-VB Product details
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1. NDF04N60ZH-VB Product Introduction
NDF04N60ZH-VB is a high-voltage single N-channel MOSFET in TO-220F package, designed for high-voltage power supply and switching applications. The device has a breakdown voltage (V\(_{DS}\)) of 650V, a maximum gate voltage (V\(_{GS}\)) of ±30V, and a threshold voltage (V\(_{th}\)) of 3.5V, which can maintain stable switching performance even at higher voltages. Although its on-resistance R\(_{DS(on)}\) is 2560mΩ (at V\(_{GS}\)=10V), its 4A rated current (I\(_D\)) makes it very suitable for low-power but high-voltage environments. Using planar technology (Plannar), the device also performs well in heat dissipation and reliability, and is very suitable for circuits that require high voltage resistance.
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NDF04N60ZH-VB is a high-voltage single N-channel MOSFET in TO-220F package, designed for high-voltage power supply and switching applications. The device has a breakdown voltage (V\(_{DS}\)) of 650V, a maximum gate voltage (V\(_{GS}\)) of ±30V, and a threshold voltage (V\(_{th}\)) of 3.5V, which can maintain stable switching performance even at higher voltages. Although its on-resistance R\(_{DS(on)}\) is 2560mΩ (at V\(_{GS}\)=10V), its 4A rated current (I\(_D\)) makes it very suitable for low-power but high-voltage environments. Using planar technology (Plannar), the device also performs well in heat dissipation and reliability, and is very suitable for circuits that require high voltage resistance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
2. Detailed parameter description of NDF04N60ZH-VB
| **Parameter** | **Value** | **Description** |
|-------------------------|--------------------|-------------------------------------|
| **Package** | TO-220F | Standard power package, providing good heat dissipation and mechanical stability. |
| **Channel type** | Single N-channel | Suitable for common high-voltage switching scenarios. |
| **Drain-source voltage (V\(_{DS}\))** | 650V | Suitable for applications that require high voltage resistance, such as switching power supplies and inverters. |
| **Gate-source voltage (V\(_{GS}\))** | ±30V | Supports a larger gate drive voltage to improve switching flexibility. |
| **Threshold voltage (V\(_{th}\))** | 3.5V | Low threshold voltage helps improve switching response speed. |
| **On-resistance (R\(_{DS(on)}\))** | 2560mΩ @ V\(_{GS}\)=10V | Higher on-resistance, more suitable for low-power applications. |
| **Drain current (I\(_D\))** | 4A | Maximum continuous current supported, suitable for medium-power circuits. |
| **Technology** | Plannar | Provides stable characteristics and high-voltage capabilities, suitable for long-term working environments. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|--------------------|-------------------------------------|
| **Package** | TO-220F | Standard power package, providing good heat dissipation and mechanical stability. |
| **Channel type** | Single N-channel | Suitable for common high-voltage switching scenarios. |
| **Drain-source voltage (V\(_{DS}\))** | 650V | Suitable for applications that require high voltage resistance, such as switching power supplies and inverters. |
| **Gate-source voltage (V\(_{GS}\))** | ±30V | Supports a larger gate drive voltage to improve switching flexibility. |
| **Threshold voltage (V\(_{th}\))** | 3.5V | Low threshold voltage helps improve switching response speed. |
| **On-resistance (R\(_{DS(on)}\))** | 2560mΩ @ V\(_{GS}\)=10V | Higher on-resistance, more suitable for low-power applications. |
| **Drain current (I\(_D\))** | 4A | Maximum continuous current supported, suitable for medium-power circuits. |
| **Technology** | Plannar | Provides stable characteristics and high-voltage capabilities, suitable for long-term working environments. |
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Domain and module applications：
3. Application fields and module examples of NDF04N60ZH-VB
1. **Switching power supply (SMPS)**
NDF04N60ZH-VB is suitable for switching power supply modules with high voltage input, especially AC-DC power converters. Its 650V withstand voltage ensures stable operation in a wide voltage input grid environment, which is commonly used in household appliances, battery chargers and LED drivers.
2. **Industrial automation control**
In industrial control systems, this MOSFET can be used for DC motor drive and relay switch control. These applications usually require the equipment to withstand transient voltage shocks, and the high V\(_{DS}\) of NDF04N60ZH-VB makes it very suitable for these scenarios.
3. **Photovoltaic inverter**
The high voltage withstand capability of this device makes it suitable for the DC-AC conversion part in the photovoltaic inverter, which is used to convert the DC power output by the solar panel into AC power. In these modules, it is often used as a high-voltage switch to ensure that the inverter can handle inputs up to 650V.
4. **High-voltage power relays and protection circuits**
In relay drive and protection modules in high-voltage systems, the high breakdown voltage and low threshold voltage characteristics of NDF04N60ZH-VB can implement fast-response protection measures to prevent circuit overload and surge current.
In summary, NDF04N60ZH-VB performs well in high-voltage and low-power scenarios, and its excellent electrical performance and package design make it an ideal choice for power management, industrial control, and photovoltaic systems.
1. **Switching power supply (SMPS)**
NDF04N60ZH-VB is suitable for switching power supply modules with high voltage input, especially AC-DC power converters. Its 650V withstand voltage ensures stable operation in a wide voltage input grid environment, which is commonly used in household appliances, battery chargers and LED drivers.
2. **Industrial automation control**
In industrial control systems, this MOSFET can be used for DC motor drive and relay switch control. These applications usually require the equipment to withstand transient voltage shocks, and the high V\(_{DS}\) of NDF04N60ZH-VB makes it very suitable for these scenarios.
3. **Photovoltaic inverter**
The high voltage withstand capability of this device makes it suitable for the DC-AC conversion part in the photovoltaic inverter, which is used to convert the DC power output by the solar panel into AC power. In these modules, it is often used as a high-voltage switch to ensure that the inverter can handle inputs up to 650V.
4. **High-voltage power relays and protection circuits**
In relay drive and protection modules in high-voltage systems, the high breakdown voltage and low threshold voltage characteristics of NDF04N60ZH-VB can implement fast-response protection measures to prevent circuit overload and surge current.
In summary, NDF04N60ZH-VB performs well in high-voltage and low-power scenarios, and its excellent electrical performance and package design make it an ideal choice for power management, industrial control, and photovoltaic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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