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NDF03N60Z-VB Product details
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NDF03N60Z-VB is a single N-channel MOSFET in TO220F package, designed for high voltage and high power applications. Its maximum drain-source voltage (VDS) reaches **650V**, suitable for various high voltage circuits. The device supports **±30V gate-source voltage (VGS)**, has a good gate threshold voltage **3.5V**, and at a gate voltage of 10V, the on-resistance (RDS(ON)) is **2560mΩ**, maintaining low power consumption under corresponding current conditions. The maximum continuous drain current (ID) of NDF03N60Z-VB is **4A**, which makes it perform well in high power switching and linear applications, providing stable performance and reliable operation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | 2560mΩ | Plannar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 4A | Plannar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
| Parameter | Value | Description |
|----------------|--------------------------------------|----------------------------------|
| **Package** | TO220F | High power, heatsink-friendly package|
| **Channel Configuration** | Single N-channel | Suitable for high voltage switching and power control|
| **VDS** | 650V | Maximum voltage between drain and source|
| **VGS** | ±30V | Maximum voltage between gate and source|
| **Vth** | 3.5V | Gate turn-on voltage|
| **RDS(ON)** | 2560mΩ @ VGS=10V | On-resistance at high gate voltage|
| **ID** | 4A | Maximum continuous drain current|
| **Technology Type** | Plannar | Planar technology for high voltage applications|
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Domain and module applications：
1. **Power supply system**
NDF03N60Z-VB can be used in **high voltage switching power supply (SMPS)** to provide efficient power conversion and support various power management applications, especially where stable high voltage output is required.
2. **Inverter**
In **photovoltaic inverter** and **wind inverter**, this MOSFET can handle high voltage DC input and convert it to AC to support the use of renewable energy.
3. **Motor drive**
This device can be used in **motor drive** systems, especially in high power and high voltage motor applications, to provide reliable control and drive capabilities to ensure high efficiency and long life.
4. **Electrical equipment**
NDF03N60Z-VB is suitable for **industrial control equipment** and **power equipment**, and can withstand high voltage and high current conditions to ensure stable operation and safety of the equipment.
5. **Thermal Management System**
Due to its TO220F package design, this MOSFET has excellent heat dissipation performance and is very suitable for **power conversion and regulation circuits** that require effective thermal management.
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NDF03N60Z-VB is a high-performance single N-channel MOSFET designed for high-voltage and high-power applications with superior electrical characteristics and a wide range of application potential. Its reliability and excellent performance make it an ideal choice for modern power systems and high-power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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