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NDD60N900U1-VB Product details
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1. NDD60N900U1-VB Product Introduction
NDD60N900U1-VB is a **single-channel N-type MOSFET** in a **TO252 package**, suitable for surface mount applications. Its **drain-source voltage (VDS)** is as high as **650V**, its **drain current (ID)** is **7A**, and its on-resistance is only **700mΩ** at **VGS = 10V**. The device is based on **superjunction multi-epitaxial (SJ_Multi-EPI) technology**, providing higher efficiency and lower losses, and is ideal for scenarios requiring high voltage and medium current, such as power management systems, inverters, and motor control.
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NDD60N900U1-VB is a **single-channel N-type MOSFET** in a **TO252 package**, suitable for surface mount applications. Its **drain-source voltage (VDS)** is as high as **650V**, its **drain current (ID)** is **7A**, and its on-resistance is only **700mΩ** at **VGS = 10V**. The device is based on **superjunction multi-epitaxial (SJ_Multi-EPI) technology**, providing higher efficiency and lower losses, and is ideal for scenarios requiring high voltage and medium current, such as power management systems, inverters, and motor control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description of NDD60N900U1-VB
| **Parameter** | **Specification** | **Description** |
|-----------------------|-------------------------------|--------------------------------------------|
| **Device type** | N-Channel MOSFET | Single channel N-type field effect transistor|
| **Package type** | TO252 | Power package suitable for surface mounting|
| **Drain-source voltage (VDS)** | 650V | Suitable for high voltage applications|
| **Gate-source voltage (VGS)** | ±30V | Provides flexible gate drive range|
| **Threshold voltage (Vth)** | 3.5V | Ensures the control voltage required for turn-on|
| **On-resistance (RDS(ON))** | 700mΩ @ VGS = 10V | Provides low loss turn-on characteristics|
| **Maximum drain current (ID)** | 7A | Supports medium current loads|
| **Process Technology** | SJ_Multi-EPI | Provides higher efficiency and power density|
---
| **Parameter** | **Specification** | **Description** |
|-----------------------|-------------------------------|--------------------------------------------|
| **Device type** | N-Channel MOSFET | Single channel N-type field effect transistor|
| **Package type** | TO252 | Power package suitable for surface mounting|
| **Drain-source voltage (VDS)** | 650V | Suitable for high voltage applications|
| **Gate-source voltage (VGS)** | ±30V | Provides flexible gate drive range|
| **Threshold voltage (Vth)** | 3.5V | Ensures the control voltage required for turn-on|
| **On-resistance (RDS(ON))** | 700mΩ @ VGS = 10V | Provides low loss turn-on characteristics|
| **Maximum drain current (ID)** | 7A | Supports medium current loads|
| **Process Technology** | SJ_Multi-EPI | Provides higher efficiency and power density|
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Domain and module applications：
III. Application fields and module examples
1. **Power management system**
NDD60N900U1-VB can be used in **AC-DC power adapters, switching power supplies (SMPS)** and other power management modules. Its high withstand voltage performance of 650V ensures reliable operation under high input voltage environment, while low on-resistance reduces power consumption and improves efficiency.
2. **Inverter and photovoltaic system**
In **solar inverter and industrial inverter system**, this MOSFET can cope with high voltage output requirements and ensure efficient conversion. Its multiple epitaxial technology reduces conduction loss and maximizes the energy efficiency of the system.
3. **Motor control and industrial equipment**
The device is suitable for **high voltage motor control modules**, such as inverters and motor drive circuits of household appliances, to reduce switching losses while ensuring stable current output.
4. **Lighting systems**
NDD60N900U1-VB is ideal for **high-voltage LED drivers** and other lighting control circuits, helping to achieve high-efficiency and low-energy lighting solutions.
5. **Consumer electronics and charging devices**
In **portable electronic devices and high-voltage chargers**, this MOSFET can provide efficient power management and robust protection for the device, ensuring stable operation of the device under a variety of input voltage conditions.
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NDD60N900U1-VB has the characteristics of **high voltage, low loss, and high reliability**, which is very suitable for application scenarios requiring **high voltage power conversion, inverters, motor control, and LED driving**. This MOSFET provides system designers with optimized circuit performance, especially suitable for applications with high-efficiency and compact circuit modules.
1. **Power management system**
NDD60N900U1-VB can be used in **AC-DC power adapters, switching power supplies (SMPS)** and other power management modules. Its high withstand voltage performance of 650V ensures reliable operation under high input voltage environment, while low on-resistance reduces power consumption and improves efficiency.
2. **Inverter and photovoltaic system**
In **solar inverter and industrial inverter system**, this MOSFET can cope with high voltage output requirements and ensure efficient conversion. Its multiple epitaxial technology reduces conduction loss and maximizes the energy efficiency of the system.
3. **Motor control and industrial equipment**
The device is suitable for **high voltage motor control modules**, such as inverters and motor drive circuits of household appliances, to reduce switching losses while ensuring stable current output.
4. **Lighting systems**
NDD60N900U1-VB is ideal for **high-voltage LED drivers** and other lighting control circuits, helping to achieve high-efficiency and low-energy lighting solutions.
5. **Consumer electronics and charging devices**
In **portable electronic devices and high-voltage chargers**, this MOSFET can provide efficient power management and robust protection for the device, ensuring stable operation of the device under a variety of input voltage conditions.
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NDD60N900U1-VB has the characteristics of **high voltage, low loss, and high reliability**, which is very suitable for application scenarios requiring **high voltage power conversion, inverters, motor control, and LED driving**. This MOSFET provides system designers with optimized circuit performance, especially suitable for applications with high-efficiency and compact circuit modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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