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NDD60N900U1T4G-VB Product details
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1. NDD60N900U1T4G-VB Product Introduction
NDD60N900U1T4G-VB is a **single N-channel MOSFET** in a **TO252 package**, designed for high-voltage circuits. The device has a **drain-source voltage (VDS) of up to 650V** and supports **±30V gate-source voltage (VGS)**, ensuring safe operation in extreme voltage environments. Its **on-resistance (RDS(ON)) is 700mΩ@VGS=10V**, and it can withstand a **7A drain current**, making it suitable for applications such as power conversion and industrial control. Using **SJ_Multi-EPI technology**, this model provides better switching performance and thermal management capabilities in high-voltage scenarios.
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NDD60N900U1T4G-VB is a **single N-channel MOSFET** in a **TO252 package**, designed for high-voltage circuits. The device has a **drain-source voltage (VDS) of up to 650V** and supports **±30V gate-source voltage (VGS)**, ensuring safe operation in extreme voltage environments. Its **on-resistance (RDS(ON)) is 700mΩ@VGS=10V**, and it can withstand a **7A drain current**, making it suitable for applications such as power conversion and industrial control. Using **SJ_Multi-EPI technology**, this model provides better switching performance and thermal management capabilities in high-voltage scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|----------------------|-------------------------|---------------------------------------------|
| **Package type** | TO252 | Surface mount package, suitable for high-density circuit board design with good heat dissipation|
| **Configuration** | Single N-channel | For efficient current switching and control|
| **Drain-source voltage (VDS)** | 650V | Suitable for high-voltage applications such as industrial and power systems|
| **Gate-source voltage (VGS)** | ±30V | Allows a wide range of gate drive|
| **Threshold voltage (Vth)** | 3.5V | Minimum voltage for gate drive|
| **On-resistance (RDS(ON))** | 700 mΩ @ VGS=10V | Keeps low losses in the on state|
| **Maximum drain current (ID)** | 7A | Suitable for medium current high voltage applications |
| **Technology** | SJ_Multi-EPI | Supporting super junction structure to improve voltage tolerance and efficiency |
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| **Parameter** | **Value** | **Description** |
|----------------------|-------------------------|---------------------------------------------|
| **Package type** | TO252 | Surface mount package, suitable for high-density circuit board design with good heat dissipation|
| **Configuration** | Single N-channel | For efficient current switching and control|
| **Drain-source voltage (VDS)** | 650V | Suitable for high-voltage applications such as industrial and power systems|
| **Gate-source voltage (VGS)** | ±30V | Allows a wide range of gate drive|
| **Threshold voltage (Vth)** | 3.5V | Minimum voltage for gate drive|
| **On-resistance (RDS(ON))** | 700 mΩ @ VGS=10V | Keeps low losses in the on state|
| **Maximum drain current (ID)** | 7A | Suitable for medium current high voltage applications |
| **Technology** | SJ_Multi-EPI | Supporting super junction structure to improve voltage tolerance and efficiency |
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Domain and module applications：
3. Application Fields and Module Examples
1. **High Voltage Power Conversion**
NDD60N900U1T4G-VB performs well in **high voltage AC-DC or DC-DC converters**. It can operate efficiently under high input voltage conditions and is an ideal choice for industrial power supplies and charging pile designs.
2. **Grid and Industrial Control Systems**
This device is suitable for **high voltage relays, switching circuits and grid dispatching equipment**, providing stable current control in harsh grid environments and improving system safety and reliability.
3. **Solar Inverters and Wind Energy Systems**
In photovoltaic inverters, this MOSFET can withstand high input voltages and efficiently switch currents, making it an ideal choice for **renewable energy conversion modules**. In addition, it is suitable for **wind energy conversion systems** to ensure stable and efficient energy transfer.
4. **Lighting Systems**
NDD60N900U1T4G-VB can be used in **high-voltage LED drivers** to maintain stable current and power control under long-term working conditions and improve the reliability of lighting systems.
5. **Motor Drive Control**
In high-voltage motor drives and control systems, this device acts as an efficient switching element to reduce energy consumption and extend equipment life, and is suitable for industrial automation and power tools.
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With its high-voltage tolerance and excellent switching performance, NDD60N900U1T4G-VB has become a key device in power electronics, industrial control and new energy applications. Its outstanding performance in high-voltage environments ensures the stability and efficiency of the equipment, and is an ideal solution for various high-voltage conversion and control modules.
1. **High Voltage Power Conversion**
NDD60N900U1T4G-VB performs well in **high voltage AC-DC or DC-DC converters**. It can operate efficiently under high input voltage conditions and is an ideal choice for industrial power supplies and charging pile designs.
2. **Grid and Industrial Control Systems**
This device is suitable for **high voltage relays, switching circuits and grid dispatching equipment**, providing stable current control in harsh grid environments and improving system safety and reliability.
3. **Solar Inverters and Wind Energy Systems**
In photovoltaic inverters, this MOSFET can withstand high input voltages and efficiently switch currents, making it an ideal choice for **renewable energy conversion modules**. In addition, it is suitable for **wind energy conversion systems** to ensure stable and efficient energy transfer.
4. **Lighting Systems**
NDD60N900U1T4G-VB can be used in **high-voltage LED drivers** to maintain stable current and power control under long-term working conditions and improve the reliability of lighting systems.
5. **Motor Drive Control**
In high-voltage motor drives and control systems, this device acts as an efficient switching element to reduce energy consumption and extend equipment life, and is suitable for industrial automation and power tools.
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With its high-voltage tolerance and excellent switching performance, NDD60N900U1T4G-VB has become a key device in power electronics, industrial control and new energy applications. Its outstanding performance in high-voltage environments ensures the stability and efficiency of the equipment, and is an ideal solution for various high-voltage conversion and control modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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