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NDD60N745U1-VB Product details
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1. NDD60N745U1-VB Product Introduction
NDD60N745U1-VB is a **single N-channel power MOSFET** in **TO-252 package**, with **650V** drain-source voltage (VDS) and **±30V** gate-source voltage (VGS) ratings. The device adopts **Super Junction (Super Junction) multi-layer EPI technology (SJ_Multi-EPI)**, which enables it to have low on-resistance (RDS(ON)) and high energy efficiency performance in high-voltage applications. This MOSFET can provide **7A** of continuous drain current (ID), and the RDS(ON) is **700mΩ** at **VGS = 10V**, which is very suitable for power management applications that require high reliability and efficient power conversion.
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NDD60N745U1-VB is a **single N-channel power MOSFET** in **TO-252 package**, with **650V** drain-source voltage (VDS) and **±30V** gate-source voltage (VGS) ratings. The device adopts **Super Junction (Super Junction) multi-layer EPI technology (SJ_Multi-EPI)**, which enables it to have low on-resistance (RDS(ON)) and high energy efficiency performance in high-voltage applications. This MOSFET can provide **7A** of continuous drain current (ID), and the RDS(ON) is **700mΩ** at **VGS = 10V**, which is very suitable for power management applications that require high reliability and efficient power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. NDD60N745U1-VB Detailed Parameters
| **Parameter** | **Value** | **Description** |
|---------------------|-----------------------------|------------------------------------|
| **Package** | TO-252 | Surface mount package, improves heat dissipation and power density|
| **Configuration** | Single N-channel | Suitable for high-speed switching and high-voltage power control|
| **Drain-source voltage (VDS)** | 650V | Maximum withstand voltage, suitable for high-voltage applications|
| **Gate-source voltage (VGS)** | ±30V | Gate drive range, ensures higher switching flexibility|
| **Turning voltage (Vth)** | 3.5V | Threshold voltage when MOSFET is turned on|
| **On-resistance (RDS(ON))** | 700mΩ (@VGS=10V) | Internal resistance in the on state, affecting power consumption|
| **Continuous drain current (ID)** | 7A | Maximum continuous current capability, suitable for a variety of loads|
| **Technology** | SJ_Multi-EPI | Super junction structure technology, reducing conduction losses and improving energy efficiency|
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| **Parameter** | **Value** | **Description** |
|---------------------|-----------------------------|------------------------------------|
| **Package** | TO-252 | Surface mount package, improves heat dissipation and power density|
| **Configuration** | Single N-channel | Suitable for high-speed switching and high-voltage power control|
| **Drain-source voltage (VDS)** | 650V | Maximum withstand voltage, suitable for high-voltage applications|
| **Gate-source voltage (VGS)** | ±30V | Gate drive range, ensures higher switching flexibility|
| **Turning voltage (Vth)** | 3.5V | Threshold voltage when MOSFET is turned on|
| **On-resistance (RDS(ON))** | 700mΩ (@VGS=10V) | Internal resistance in the on state, affecting power consumption|
| **Continuous drain current (ID)** | 7A | Maximum continuous current capability, suitable for a variety of loads|
| **Technology** | SJ_Multi-EPI | Super junction structure technology, reducing conduction losses and improving energy efficiency|
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Domain and module applications：
3. Application fields and typical module examples
**1. Switching power supply (SMPS)**
NDD60N745U1-VB is suitable for **AC-DC or DC-DC power converters**, in which its 650V high withstand voltage can meet the power input requirements of industrial and consumer-grade equipment. It is often used in PFC (power factor correction) and flyback converters at the main power supply level.
**2. Motor control and drive**
In industrial automation, this MOSFET can support the drive control of **small servo motors and stepper motors**. Its high voltage and multi-layer EPI technology can provide more stable switching performance and energy efficiency when driving motors.
**3. Photovoltaic inverters and energy storage systems**
Photovoltaic power generation systems and home energy storage modules need to handle higher DC voltages. The 650V rating of the NDD60N745U1-VB is very suitable for applications in the inverter main circuit, ensuring efficient and stable DC-AC conversion in solar systems.
**4. LED lighting driver**
In outdoor or industrial LED lighting systems, this MOSFET can be used in high-voltage LED drive circuits to ensure accurate current control and high power conversion efficiency.
**5. Battery Management System (BMS)**
The NDD60N745U1-VB is also suitable for use in the protection circuit of the **lithium battery management system**, helping to manage the high current and high-voltage loads of battery charging and discharging, ensuring the safety and stability of the system.
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The high withstand voltage, low on-resistance and reliable switching characteristics of this MOSFET make it widely used in various high-voltage power control modules, such as power converters, motor drives and energy storage systems, to meet the needs of industrial and consumer electronics products.
**1. Switching power supply (SMPS)**
NDD60N745U1-VB is suitable for **AC-DC or DC-DC power converters**, in which its 650V high withstand voltage can meet the power input requirements of industrial and consumer-grade equipment. It is often used in PFC (power factor correction) and flyback converters at the main power supply level.
**2. Motor control and drive**
In industrial automation, this MOSFET can support the drive control of **small servo motors and stepper motors**. Its high voltage and multi-layer EPI technology can provide more stable switching performance and energy efficiency when driving motors.
**3. Photovoltaic inverters and energy storage systems**
Photovoltaic power generation systems and home energy storage modules need to handle higher DC voltages. The 650V rating of the NDD60N745U1-VB is very suitable for applications in the inverter main circuit, ensuring efficient and stable DC-AC conversion in solar systems.
**4. LED lighting driver**
In outdoor or industrial LED lighting systems, this MOSFET can be used in high-voltage LED drive circuits to ensure accurate current control and high power conversion efficiency.
**5. Battery Management System (BMS)**
The NDD60N745U1-VB is also suitable for use in the protection circuit of the **lithium battery management system**, helping to manage the high current and high-voltage loads of battery charging and discharging, ensuring the safety and stability of the system.
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The high withstand voltage, low on-resistance and reliable switching characteristics of this MOSFET make it widely used in various high-voltage power control modules, such as power converters, motor drives and energy storage systems, to meet the needs of industrial and consumer electronics products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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