NDD60N745U1T4G-VB Product details
Product introduction:
NDD60N745U1T4G-VB is a high-voltage N-channel MOSFET in a **TO252 package**, suitable for applications requiring high efficiency and high reliability. The device has a **650V drain-source voltage (VDS)**, which can handle power conversion and switching tasks in high-voltage environments. In addition, its **gate-source voltage (VGS)** range is ±30V, supporting flexible drive design. NDD60N745U1T4G-VB uses **Super-Junction (SJ) Multi-EPI technology** to effectively reduce conduction losses and improve conversion efficiency. At a gate-source voltage of 10V, the device's **RDS(ON)** is 700mΩ and can support a maximum current of **7A**. This MOSFET is particularly suitable for industrial equipment, power modules, and high-voltage control systems.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | 700mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 7A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
- **Product model**: NDD60N745U1T4G-VB
- **Package type**: TO252
- **Configuration**: Single-N-Channel
- **Drain-source voltage (VDS)**: 650V
- **Gate-source voltage (VGS)**: ±30V
- **Threshold voltage (Vth)**: 3.5V
- **On-resistance (RDS(ON))**:
- 700mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 7A
- **Technology**: Super-Junction (SJ) Multi-EPI
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Domain and module applications:
1. **Industrial power modules**
- The NDD60N745U1T4G-VB is ideal for **industrial-grade power modules**, such as AC-DC converters and DC-DC converters. Its high voltage withstand capability and low RDS(ON) ensure efficient energy conversion at high voltages, improving overall system reliability.
2. **Electric vehicle charging piles**
- Due to its high voltage withstand capability of 650V, this MOSFET can be used in high-voltage DC control parts and power conversion circuits in **Electric vehicle (EV) charging piles**, ensuring stable operation and reducing losses.
3. **Switching mode power supply (SMPS)**
- This MOSFET is suitable for **Switching mode power supply (SMPS)**, such as server power supplies, home appliances and lighting power supplies, and can provide efficient power switching solutions to improve the energy efficiency of the system.
4. **Photovoltaic inverter**
- In **photovoltaic inverter**, NDD60N745U1T4G-VB can effectively control the conversion between DC voltage and AC power, providing stable power conversion and output for solar energy systems.
5. **Industrial motor control system**
- In industrial automation, this MOSFET can be used in **motor drive and control systems**, especially for scenarios that require high voltage and high current switching, such as robot control and elevator systems.
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In summary, NDD60N745U1T4G-VB is widely used in **industrial equipment, power conversion, car charging, photovoltaic systems and motor control** with its **high voltage handling capability, support of SJ Multi-EPI technology**, and **efficient switching performance**. Its high performance and reliability make it an ideal choice for various high voltage applications.
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