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NDD60N550U1T4G-VB Product details
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NDD60N550U1T4G-VB is a single N-channel MOSFET in a TO252 package designed for high voltage applications. Its maximum drain-source voltage (VDS) is **650V**, suitable for applications requiring high voltage tolerance. The device supports **±30V gate-source voltage (VGS)**, and its on-resistance (RDS(ON)) is **500mΩ** at a 10V gate drive, providing good conductivity. The gate threshold voltage of NDD60N550U1T4G-VB is **3.5V**, and it can operate stably at a maximum drain current (ID) of **9A**. It has excellent switching performance and high efficiency, and is suitable for a variety of high-power and high-frequency applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | 500mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 9A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
| Parameter | Value | Description |
|----------------|--------------------------------------|----------------------------------|
| **Package** | TO252 | Compact surface mount package|
| **Channel Configuration** | Single N-channel | Suitable for load switching and power amplification|
| **VDS** | 650V | Maximum voltage between drain and source|
| **VGS** | ±30V | Maximum voltage between gate and source|
| **Vth** | 3.5V | Gate turn-on voltage|
| **RDS(ON)** | 500mΩ @ VGS=10V | On-resistance at high gate voltage|
| **ID** | 9A | Maximum continuous drain current|
| **Technology Type** | SJ_Multi-EPI | Improved conductivity for high voltage applications|
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Domain and module applications：
1. **Switching Power Supply (SMPS)**
NDD60N550U1T4G-VB is commonly used in **switching power supply design**, which can effectively manage power transmission under high voltage and high frequency conditions, improve system conversion efficiency, and reduce power consumption.
2. **DC-DC Converter**
In **DC-DC Converter** applications, this MOSFET can be used as the main switching element to support high voltage input while providing a stable output voltage to meet high requirements for power supply performance.
3. **Motor Control**
This device is suitable for **motor drive systems**, especially in high voltage motor applications, it can provide strong current output and achieve efficient motor control and speed regulation.
4. **Inverter**
NDD60N550U1T4G-VB is suitable for **photovoltaic inverter** and **UPS system**, supporting energy conversion from DC to AC, meeting the application requirements of renewable energy and emergency power supply.
5. **Industrial equipment**
This MOSFET is widely used in **industrial automation** and **power monitoring systems**, and can maintain reliable performance in high voltage environments and support various control and switching functions.
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NDD60N550U1T4G-VB is a high-performance single N-channel MOSFET with superior electrical performance and wide application potential, especially suitable for high voltage and high power requirements. Its excellent switching capability and compact package design make it an ideal choice for modern power management systems and electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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