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NDD05N50ZT4G-VB Product details
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1. NDD05N50ZT4G-VB Product Introduction
NDD05N50ZT4G-VB is a **single N-channel MOSFET**, using **TO252** package, suitable for high voltage and high power applications. Its maximum drain-source voltage (V_DS) can reach **650V**, the operating range of the gate-source voltage (V_GS) is ±30V, and the turn-on voltage (V_th) is **3.5V**. When the gate voltage is 10V, its on-resistance (R_DS(ON)) is **1000mΩ**, and it can withstand a maximum drain current of **5A**. The device adopts **SJ_Multi-EPI** technology, has good thermal stability and excellent switching characteristics, and is widely used in various high-voltage power supplies and industrial control systems, and can meet the requirements of high reliability and high efficiency.
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NDD05N50ZT4G-VB is a **single N-channel MOSFET**, using **TO252** package, suitable for high voltage and high power applications. Its maximum drain-source voltage (V_DS) can reach **650V**, the operating range of the gate-source voltage (V_GS) is ±30V, and the turn-on voltage (V_th) is **3.5V**. When the gate voltage is 10V, its on-resistance (R_DS(ON)) is **1000mΩ**, and it can withstand a maximum drain current of **5A**. The device adopts **SJ_Multi-EPI** technology, has good thermal stability and excellent switching characteristics, and is widely used in various high-voltage power supplies and industrial control systems, and can meet the requirements of high reliability and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. NDD05N50ZT4G-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|--------------------------|------------------------------|----------------------------|
| **Package type** | TO252 | Medium package, suitable for various applications|
| **Channel configuration** | Single N-channel | Suitable for power management and switching circuits|
| **Drain-source voltage (V_DS)** | 650V | Ideal for high-voltage applications|
| **Gate-source voltage (V_GS)** | ±30V | Flexible drive voltage control|
| **Turning voltage (V_th)** | 3.5V | Suitable for most control circuits|
| **On-resistance (R_DS(ON))** | 1000mΩ @ V_GS=10V | Maintains low loss at higher voltages|
| **Maximum drain current (I_D)** | 5A | Suitable for medium loads|
| **Technology type** | SJ_Multi-EPI | Improved thermal stability and conduction efficiency|
| **Operating temperature range** | -55°C ~ 150°C | Suitable for various extreme temperature environments|
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| **Parameter** | **Value** | **Description** |
|--------------------------|------------------------------|----------------------------|
| **Package type** | TO252 | Medium package, suitable for various applications|
| **Channel configuration** | Single N-channel | Suitable for power management and switching circuits|
| **Drain-source voltage (V_DS)** | 650V | Ideal for high-voltage applications|
| **Gate-source voltage (V_GS)** | ±30V | Flexible drive voltage control|
| **Turning voltage (V_th)** | 3.5V | Suitable for most control circuits|
| **On-resistance (R_DS(ON))** | 1000mΩ @ V_GS=10V | Maintains low loss at higher voltages|
| **Maximum drain current (I_D)** | 5A | Suitable for medium loads|
| **Technology type** | SJ_Multi-EPI | Improved thermal stability and conduction efficiency|
| **Operating temperature range** | -55°C ~ 150°C | Suitable for various extreme temperature environments|
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Domain and module applications：
3. Typical Application Fields and Modules of NDD05N50ZT4G-VB
**1. High Voltage Power Supply and Inverter**
NDD05N50ZT4G-VB is widely used in **high voltage power supply** systems, especially in power converters and inverters that need to handle voltages up to 650V. Its high withstand voltage and good switching performance make it an ideal choice for photovoltaic inverters and wind power generation systems, ensuring system stability and efficiency.
**2. Industrial Control and Automation**
In **industrial automation** systems, this MOSFET can be used in motor drive and control circuits to provide reliable switching performance. In inverter and servo drive systems, it can effectively manage the start-up and operation of the motor, reduce power consumption and improve the overall efficiency of the system.
**3. Power Tools and Home Appliances**
NDD05N50ZT4G-VB is also suitable for **power tools** and home appliances, such as electric saws, vacuum cleaners and washing machines. This MOSFET can cope with high voltage requirements and provide stable output, ensuring the normal operation of the equipment under various working conditions.
**4. Automotive Electronics**
In **Automotive Electronics**, NDD05N50ZT4G-VB can be used for high-voltage power management and battery management systems to ensure the safety and reliability of automotive electrical systems. It is suitable for battery protection and power conversion modules in electric vehicles, meeting the needs of modern cars for high efficiency and high performance.
**5. Communication Equipment**
In **Communication Equipment**, this MOSFET can be used in high-power applications such as base stations and signal amplifiers, which can effectively reduce energy loss during signal transmission, thereby improving communication quality and system reliability.
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NDD05N50ZT4G-VB has become an important choice for high-efficiency electronic devices with its excellent high-voltage performance and wide application fields. Its SJ_Multi-EPI technology ensures the stability of the product under high temperature and high load, meeting the strict requirements of modern electronic equipment for performance and reliability.
**1. High Voltage Power Supply and Inverter**
NDD05N50ZT4G-VB is widely used in **high voltage power supply** systems, especially in power converters and inverters that need to handle voltages up to 650V. Its high withstand voltage and good switching performance make it an ideal choice for photovoltaic inverters and wind power generation systems, ensuring system stability and efficiency.
**2. Industrial Control and Automation**
In **industrial automation** systems, this MOSFET can be used in motor drive and control circuits to provide reliable switching performance. In inverter and servo drive systems, it can effectively manage the start-up and operation of the motor, reduce power consumption and improve the overall efficiency of the system.
**3. Power Tools and Home Appliances**
NDD05N50ZT4G-VB is also suitable for **power tools** and home appliances, such as electric saws, vacuum cleaners and washing machines. This MOSFET can cope with high voltage requirements and provide stable output, ensuring the normal operation of the equipment under various working conditions.
**4. Automotive Electronics**
In **Automotive Electronics**, NDD05N50ZT4G-VB can be used for high-voltage power management and battery management systems to ensure the safety and reliability of automotive electrical systems. It is suitable for battery protection and power conversion modules in electric vehicles, meeting the needs of modern cars for high efficiency and high performance.
**5. Communication Equipment**
In **Communication Equipment**, this MOSFET can be used in high-power applications such as base stations and signal amplifiers, which can effectively reduce energy loss during signal transmission, thereby improving communication quality and system reliability.
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NDD05N50ZT4G-VB has become an important choice for high-efficiency electronic devices with its excellent high-voltage performance and wide application fields. Its SJ_Multi-EPI technology ensures the stability of the product under high temperature and high load, meeting the strict requirements of modern electronic equipment for performance and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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