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NDD05N50Z-1G-VB Product details
Back to previous pageProduct introduction：
1. NDD05N50Z-1G-VB Product Introduction
NDD05N50Z-1G-VB is a **Single-N-Channel** MOSFET in a **TO251 package**, designed for high voltage applications. Its **Drain-Source Voltage (V\(_{DS}\))** can reach **650V**, providing excellent performance for high voltage power supplies and switching circuits. The **Threshold Voltage (V\(_{th}\))** of this device is **3.5V**, suitable for low voltage drive circuits. **The **On-Resistance (R\(_{DS(ON)}\))** at V\(_{GS}\)=10V is **950mΩ**, ensuring low conduction loss at high voltage, suitable for applications requiring high efficiency. The maximum drain current (I\(_{D}\)) is **5A**. At the same time, **SJ_Multi-EPI** technology is adopted to further improve the switching characteristics and reliability. It is widely used in various high-voltage power management and converters.
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NDD05N50Z-1G-VB is a **Single-N-Channel** MOSFET in a **TO251 package**, designed for high voltage applications. Its **Drain-Source Voltage (V\(_{DS}\))** can reach **650V**, providing excellent performance for high voltage power supplies and switching circuits. The **Threshold Voltage (V\(_{th}\))** of this device is **3.5V**, suitable for low voltage drive circuits. **The **On-Resistance (R\(_{DS(ON)}\))** at V\(_{GS}\)=10V is **950mΩ**, ensuring low conduction loss at high voltage, suitable for applications requiring high efficiency. The maximum drain current (I\(_{D}\)) is **5A**. At the same time, **SJ_Multi-EPI** technology is adopted to further improve the switching characteristics and reliability. It is widely used in various high-voltage power management and converters.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | 950mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO251 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO251 | Single-N |
II. NDD05N50Z-1G-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TO251 | Medium power package suitable for surface mounting|
| **Channel type** | Single-N-Channel | Single N-channel, suitable for high voltage switching applications|
| **V\(_{DS}\)** | 650V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±30V | Gate-source voltage range|
| **V\(_{th}\)** | 3.5V | Threshold voltage for turn-on|
| **R\(_{DS(ON)}\)** | 950mΩ (V\(_{GS}\)=10V) | On-resistance|
| **I\(_{D}\)** | 5A | Maximum continuous drain current|
| **Technology** | SJ_Multi-EPI | Multi-junction technology for improved switching efficiency|
| **Operating temperature range** | -55°C to 150°C | Wide operating temperature range for harsh environments|
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| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TO251 | Medium power package suitable for surface mounting|
| **Channel type** | Single-N-Channel | Single N-channel, suitable for high voltage switching applications|
| **V\(_{DS}\)** | 650V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±30V | Gate-source voltage range|
| **V\(_{th}\)** | 3.5V | Threshold voltage for turn-on|
| **R\(_{DS(ON)}\)** | 950mΩ (V\(_{GS}\)=10V) | On-resistance|
| **I\(_{D}\)** | 5A | Maximum continuous drain current|
| **Technology** | SJ_Multi-EPI | Multi-junction technology for improved switching efficiency|
| **Operating temperature range** | -55°C to 150°C | Wide operating temperature range for harsh environments|
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Domain and module applications：
3. Application fields and module examples
1. **High-voltage power converter**
NDD05N50Z-1G-VB is very suitable for **high-voltage DC-DC converter**. Its high voltage capability of 650V makes it excel in the field of power electronics, and can effectively convert and manage the voltage from the power supply.
2. **Inverter application**
In **photovoltaic inverter**, this MOSFET can be used to convert DC to AC, adapt to the requirements of high current and high voltage, and improve the overall efficiency and reliability of the inverter.
3. **Switching power supply (SMPS)**
NDD05N50Z-1G-VB is suitable for **switching power supply modules**. Its low on-resistance and high voltage capability ensure efficient power conversion, suitable for a wide range of consumer electronics such as TVs, computer power supplies and home appliances.
4. **Electric vehicle charging system**
In **Electric vehicle charging stations**, MOSFET can be used for high-voltage DC charging, supporting fast charging functions to meet the charging needs of electric vehicles.
5. **Motor control**
In **Industrial motor drive systems**, NDD05N50Z-1G-VB can be used to control the start and stop and speed regulation of the motor. It can withstand high voltage and high current and improve the working efficiency of the motor.
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NDD05N50Z-1G-VB has excellent performance in high-voltage power management, electric vehicles, inverters and switching power supplies with its high voltage capability and excellent conduction performance, and has become an important part of modern power electronic equipment. Its SJ_Multi-EPI technology ensures high efficiency and reliability, making it an ideal choice in a variety of applications.
1. **High-voltage power converter**
NDD05N50Z-1G-VB is very suitable for **high-voltage DC-DC converter**. Its high voltage capability of 650V makes it excel in the field of power electronics, and can effectively convert and manage the voltage from the power supply.
2. **Inverter application**
In **photovoltaic inverter**, this MOSFET can be used to convert DC to AC, adapt to the requirements of high current and high voltage, and improve the overall efficiency and reliability of the inverter.
3. **Switching power supply (SMPS)**
NDD05N50Z-1G-VB is suitable for **switching power supply modules**. Its low on-resistance and high voltage capability ensure efficient power conversion, suitable for a wide range of consumer electronics such as TVs, computer power supplies and home appliances.
4. **Electric vehicle charging system**
In **Electric vehicle charging stations**, MOSFET can be used for high-voltage DC charging, supporting fast charging functions to meet the charging needs of electric vehicles.
5. **Motor control**
In **Industrial motor drive systems**, NDD05N50Z-1G-VB can be used to control the start and stop and speed regulation of the motor. It can withstand high voltage and high current and improve the working efficiency of the motor.
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NDD05N50Z-1G-VB has excellent performance in high-voltage power management, electric vehicles, inverters and switching power supplies with its high voltage capability and excellent conduction performance, and has become an important part of modern power electronic equipment. Its SJ_Multi-EPI technology ensures high efficiency and reliability, making it an ideal choice in a variety of applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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