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NDD03N80ZT4G-VB Product details
Back to previous pageProduct introduction：
1. NDD03N80ZT4G-VB Product Introduction
NDD03N80ZT4G-VB is a high voltage single N-channel MOSFET in TO252 package, designed for high voltage applications. Its drain-source voltage (VDS) is up to 800V, enabling it to handle high voltage environments while supporting a gate drive voltage (VGS) of ±30V. The threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 2600mΩ at a gate drive of 10V, which results in relatively high power consumption under load conditions, but still provides stable performance in high voltage applications. The maximum drain current (ID) of NDD03N80ZT4G-VB is 2A, which is suitable for use in high voltage and small and medium current applications, and is widely used in power management and industrial control.
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NDD03N80ZT4G-VB is a high voltage single N-channel MOSFET in TO252 package, designed for high voltage applications. Its drain-source voltage (VDS) is up to 800V, enabling it to handle high voltage environments while supporting a gate drive voltage (VGS) of ±30V. The threshold voltage (Vth) is 3.5V, and its on-resistance (RDS(ON)) is 2600mΩ at a gate drive of 10V, which results in relatively high power consumption under load conditions, but still provides stable performance in high voltage applications. The maximum drain current (ID) of NDD03N80ZT4G-VB is 2A, which is suitable for use in high voltage and small and medium current applications, and is widely used in power management and industrial control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | 2600mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 800V | 3.5V | 2A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. NDD03N80ZT4G-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------------|--------------------------------------------|
| **Package type** | TO252 | Provides proper heat dissipation and is suitable for high voltage applications. |
| **Configuration** | Single N-channel | Suitable for switching and amplification applications with multiple functions. |
| **Drain-source voltage (VDS)** | 800V | Able to withstand high voltage and suitable for a variety of high voltage applications. |
| **Gate drive voltage (VGS)** | ±30V | Allows operation over a wide gate voltage range. |
| **Threshold voltage (Vth)** | 3.5V | Provides fast turn-on and turn-off characteristics. |
| **On-resistance (RDS(ON))** | 2600mΩ @ VGS=10V | Larger on-resistance at high voltage, suitable for low-power applications. |
| **Maximum drain current (ID)** | 2A | Supports low-power loads, suitable for power management and control circuits. |
| **Technology** | SJ_Multi-EPI | Adopts multi-crystal structure technology to improve current carrying capacity. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------------|--------------------------------------------|
| **Package type** | TO252 | Provides proper heat dissipation and is suitable for high voltage applications. |
| **Configuration** | Single N-channel | Suitable for switching and amplification applications with multiple functions. |
| **Drain-source voltage (VDS)** | 800V | Able to withstand high voltage and suitable for a variety of high voltage applications. |
| **Gate drive voltage (VGS)** | ±30V | Allows operation over a wide gate voltage range. |
| **Threshold voltage (Vth)** | 3.5V | Provides fast turn-on and turn-off characteristics. |
| **On-resistance (RDS(ON))** | 2600mΩ @ VGS=10V | Larger on-resistance at high voltage, suitable for low-power applications. |
| **Maximum drain current (ID)** | 2A | Supports low-power loads, suitable for power management and control circuits. |
| **Technology** | SJ_Multi-EPI | Adopts multi-crystal structure technology to improve current carrying capacity. |
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Domain and module applications：
3. Application fields and module examples
1. **High-voltage power management**
NDD03N80ZT4G-VB is suitable for high-voltage power management systems such as switch mode power supplies (SMPS) and DC-DC converters. In these applications, it can stably control the output voltage and current, ensure efficient operation of the system, and maintain reliability in high-voltage environments.
2. **Power tools**
In power tools, this MOSFET can be used as a power control switch to achieve drive control of the motor. Due to its high drain-source voltage of up to 800V, it can meet the power requirements of high-power power tools and ensure efficient and safe operation.
3. **Industrial automation**
NDD03N80ZT4G-VB is also suitable for industrial automation equipment as a drive control element. In PLC (Programmable Logic Controller) and industrial control systems, it can achieve efficient control of various sensors and actuators.
4. **Lighting control**
In high-voltage lighting systems, such as street lighting and industrial lighting, NDD03N80ZT4G-VB can be used as a switching element to control the switching and dimming of lamps. This makes it possible to achieve efficient and reliable lighting solutions in high-voltage applications.
5. **Inverter**
NDD03N80ZT4G-VB can also be used in inverter applications, especially in high-voltage solar inverters. It can efficiently convert DC power to AC power under high voltage conditions to support the application of renewable energy.
In summary, NDD03N80ZT4G-VB, with its high voltage carrying capacity and moderate on-resistance, has become an ideal choice for high-voltage power supply and control systems, and is widely used in multiple industrial and commercial fields.
1. **High-voltage power management**
NDD03N80ZT4G-VB is suitable for high-voltage power management systems such as switch mode power supplies (SMPS) and DC-DC converters. In these applications, it can stably control the output voltage and current, ensure efficient operation of the system, and maintain reliability in high-voltage environments.
2. **Power tools**
In power tools, this MOSFET can be used as a power control switch to achieve drive control of the motor. Due to its high drain-source voltage of up to 800V, it can meet the power requirements of high-power power tools and ensure efficient and safe operation.
3. **Industrial automation**
NDD03N80ZT4G-VB is also suitable for industrial automation equipment as a drive control element. In PLC (Programmable Logic Controller) and industrial control systems, it can achieve efficient control of various sensors and actuators.
4. **Lighting control**
In high-voltage lighting systems, such as street lighting and industrial lighting, NDD03N80ZT4G-VB can be used as a switching element to control the switching and dimming of lamps. This makes it possible to achieve efficient and reliable lighting solutions in high-voltage applications.
5. **Inverter**
NDD03N80ZT4G-VB can also be used in inverter applications, especially in high-voltage solar inverters. It can efficiently convert DC power to AC power under high voltage conditions to support the application of renewable energy.
In summary, NDD03N80ZT4G-VB, with its high voltage carrying capacity and moderate on-resistance, has become an ideal choice for high-voltage power supply and control systems, and is widely used in multiple industrial and commercial fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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