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NDD03N50ZT4G-VB Product details
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1. NDD03N50ZT4G-VB Product Introduction
NDD03N50ZT4G-VB is a **single N-channel MOSFET** in **TO252 package**, designed for high voltage applications. It has **650V drain-source voltage (VDS)** and **±30V gate-source voltage (VGS)**, suitable for circuits requiring higher voltage tolerance. The device has an on-resistance **RDS(ON) of 1000mΩ@VGS=10V**, which can effectively control power consumption under higher current conditions. Through **SJ_Multi-EPI technology**, NDD03N50ZT4G-VB provides excellent thermal performance and reliability, suitable for use in various power and control applications.
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NDD03N50ZT4G-VB is a **single N-channel MOSFET** in **TO252 package**, designed for high voltage applications. It has **650V drain-source voltage (VDS)** and **±30V gate-source voltage (VGS)**, suitable for circuits requiring higher voltage tolerance. The device has an on-resistance **RDS(ON) of 1000mΩ@VGS=10V**, which can effectively control power consumption under higher current conditions. Through **SJ_Multi-EPI technology**, NDD03N50ZT4G-VB provides excellent thermal performance and reliability, suitable for use in various power and control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | 1000mΩ | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 650V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
II. Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------|---------------------------------------------|
| **Package type** | TO252 | Suitable for surface mounting, high space utilization, good heat dissipation performance|
| **Configuration** | Single N-channel | Provides excellent switching performance, suitable for various high-voltage applications|
| **Drain-source voltage (VDS)** | 650V | Suitable for high-voltage environments, ensuring equipment safety and reliability|
| **Gate-source voltage (VGS)** | ±30V | Provides flexible gate drive voltage range|
| **Threshold voltage (Vth)** | 3.5V | Minimum on-gate voltage|
| **On-resistance (RDS(ON))** | 1000 mΩ @ VGS=10V | Ensures effective power management under high current conditions|
| **Maximum drain current (ID)** | 5A | Suitable for medium current applications, maintaining stable performance |
| **Technology** | SJ_Multi-EPI | Provides superior conductivity and switching speed |
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| **Parameter** | **Value** | **Description** |
|---------------------|-------------------------|---------------------------------------------|
| **Package type** | TO252 | Suitable for surface mounting, high space utilization, good heat dissipation performance|
| **Configuration** | Single N-channel | Provides excellent switching performance, suitable for various high-voltage applications|
| **Drain-source voltage (VDS)** | 650V | Suitable for high-voltage environments, ensuring equipment safety and reliability|
| **Gate-source voltage (VGS)** | ±30V | Provides flexible gate drive voltage range|
| **Threshold voltage (Vth)** | 3.5V | Minimum on-gate voltage|
| **On-resistance (RDS(ON))** | 1000 mΩ @ VGS=10V | Ensures effective power management under high current conditions|
| **Maximum drain current (ID)** | 5A | Suitable for medium current applications, maintaining stable performance |
| **Technology** | SJ_Multi-EPI | Provides superior conductivity and switching speed |
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Domain and module applications：
3. Application Fields and Module Examples
1. **High Voltage Power Supplies**
NDD03N50ZT4G-VB is particularly suitable for **high voltage DC-DC converters**, achieving efficient voltage conversion in power management, and can support high voltage applications from AC to DC, such as industrial power supplies and renewable energy systems.
2. **Lighting Drivers**
This MOSFET can be used in LED lighting driver circuits to ensure stable current control under high voltage conditions and improve the energy efficiency of lamps. It is widely used in commercial and household lighting systems.
3. **Motor Control**
In motor control applications, NDD03N50ZT4G-VB can be used as a switching element in motor drivers to achieve high efficiency and low heat loss, suitable for power tools and industrial equipment.
4. **Inverters**
This MOSFET can be used in inverter circuits to provide efficient current switching, suitable for solar inverters and wind energy conversion systems, and support the efficient use of renewable energy.
5. **Power Amplifiers**
In RF power amplifier design, NDD03N50ZT4G-VB is suitable for high-voltage output requirements, can improve signal quality and output power, and is widely used in communication equipment.
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With its excellent high-voltage performance and diverse applications, NDD03N50ZT4G-VB provides a reliable solution for various power supply and control circuit designs, especially for high-voltage and medium-current applications.
1. **High Voltage Power Supplies**
NDD03N50ZT4G-VB is particularly suitable for **high voltage DC-DC converters**, achieving efficient voltage conversion in power management, and can support high voltage applications from AC to DC, such as industrial power supplies and renewable energy systems.
2. **Lighting Drivers**
This MOSFET can be used in LED lighting driver circuits to ensure stable current control under high voltage conditions and improve the energy efficiency of lamps. It is widely used in commercial and household lighting systems.
3. **Motor Control**
In motor control applications, NDD03N50ZT4G-VB can be used as a switching element in motor drivers to achieve high efficiency and low heat loss, suitable for power tools and industrial equipment.
4. **Inverters**
This MOSFET can be used in inverter circuits to provide efficient current switching, suitable for solar inverters and wind energy conversion systems, and support the efficient use of renewable energy.
5. **Power Amplifiers**
In RF power amplifier design, NDD03N50ZT4G-VB is suitable for high-voltage output requirements, can improve signal quality and output power, and is widely used in communication equipment.
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With its excellent high-voltage performance and diverse applications, NDD03N50ZT4G-VB provides a reliable solution for various power supply and control circuit designs, especially for high-voltage and medium-current applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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