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NDC7003P-VB Product details

Product introduction:

1. NDC7003P-VB Product Introduction
NDC7003P-VB is a **dual P-channel MOSFET** in **SOT23-6 package**, designed for high-efficiency power management and load switching applications. The device has a **-60V** drain-source voltage (VDS), suitable for negative voltage applications. Its gate voltage (VGS) range is ±20V, and the threshold voltage (Vth) is **-1.7V**, ensuring effective conduction at a lower gate voltage. The **on-resistance (RDS(ON))** of the MOSFET is **85mΩ** at **VGS=4.5V**, and decreases to **70mΩ** at **VGS=10V**, supporting a maximum **-4.5A** continuous current. Using **Trench technology**, this MOSFET provides excellent switching performance and low power consumption, and is widely used in power and load control of various electronic devices.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOT23-6 Dual-P+P -60V -1.7V -4.5A 70mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOT23-6 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOT23-6 Dual-P+P -60V -1.7V -4.5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOT23-6 Dual-P+P -60V -1.7V -4.5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOT23-6 Dual-P+P
2. NDC7003P-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|-------------------------------------------|
| **Package** | SOT23-6 | Small surface mount package, suitable for space-constrained designs|
| **Configuration** | Dual P-channel | Provides flexible negative voltage applications|
| **Drain-source voltage (VDS)** | -60V | Can be used for negative voltage applications|
| **Gate-source voltage (VGS)** | ±20V | Wide gate control range, flexible application|
| **Threshold voltage (Vth)** | -1.7V | Low threshold voltage ensures fast turn-on|
| **On-resistance (RDS(ON))** | 85mΩ@VGS=4.5V
70mΩ@VGS=10V | Low on-resistance reduces power consumption|
| **Continuous Drain Current (ID)** | -4.5A | Suitable for medium load applications|
| **Technology** | Trench | Provides efficient switching performance and low power consumption|

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Domain and module applications:

III. Application fields and module examples

1. **Power management module (PMM)**
NDC7003P-VB can be used as a load switch in **power management module** to control the on and off of the power supply, ensuring efficient power distribution and use. Its low on-resistance (70mΩ) and high current capability (-4.5A) can effectively reduce power consumption and improve power efficiency.

2. **Power tools**
In **power tools**, this dual P-channel MOSFET can be used for motor drive and control, helping to achieve efficient load management and provide stable power output. It is suitable for electric screwdrivers, cutting machines and other equipment.

3. **Audio amplifier**
NDC7003P-VB is also suitable for the output stage of **audio amplifier**, providing negative voltage switching, ensuring efficient and low-distortion audio signal transmission, and improving the overall performance of audio equipment.

4. **Load Switch**
In **Load Switch** applications, this MOSFET can be used to quickly switch loads for more efficient energy utilization, suitable for smart home and industrial automation equipment.

5. **Automotive Electronics**
NDC7003P-VB can be used in **Automotive Electronics**, especially in controlling loads such as lighting, entertainment systems and power management, and can provide reliable performance under extreme conditions.

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**Summary**: NDC7003P-VB is a high-performance dual P-channel MOSFET. With its **SOT23-6 package**, **low on-resistance** and **-4.5A current capability**, it provides reliable solutions in power management, power tools, audio amplifiers and load control, suitable for a variety of electronic products and applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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