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NDC7001C-VB Product details
Back to previous pageProduct introduction：
1. NDC7001C-VB Product Introduction
NDC7001C-VB is a dual N+P channel MOSFET in a SOT23-6 package, designed for efficient power management and signal switching. The device has a drain-source voltage (VDS) of ±60V, suitable for positive and negative voltage applications. The gate voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 1.8V (N channel) and -1.7V (P channel), ensuring effective conduction at a lower gate voltage. Its on-resistance (RDS(ON)) is 120mΩ at VGS=4.5V, and drops to 100mΩ at VGS=10V, supporting a maximum continuous current of ±4A. This MOSFET uses Trench technology, providing superior switching performance and low power consumption, and is widely used in various high-efficiency power supplies and power management modules.
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NDC7001C-VB is a dual N+P channel MOSFET in a SOT23-6 package, designed for efficient power management and signal switching. The device has a drain-source voltage (VDS) of ±60V, suitable for positive and negative voltage applications. The gate voltage (VGS) range is ±20V, and the threshold voltage (Vth) is 1.8V (N channel) and -1.7V (P channel), ensuring effective conduction at a lower gate voltage. Its on-resistance (RDS(ON)) is 120mΩ at VGS=4.5V, and drops to 100mΩ at VGS=10V, supporting a maximum continuous current of ±4A. This MOSFET uses Trench technology, providing superior switching performance and low power consumption, and is widely used in various high-efficiency power supplies and power management modules.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±60V | 1.8/-1.7V | ±4A | 100mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±60V | 1.8/-1.7V | ±4A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P | ±60V | 1.8/-1.7V | ±4A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Dual-N+P |
2. NDC7001C-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|-------------------------------------------|
| **Package** | SOT23-6 | Small surface mount package, suitable for space-constrained designs|
| **Configuration** | Dual N+P channel | Provides flexibility for positive and negative voltage applications|
| **Drain-source voltage (VDS)** | ±60V | Can be used for positive and negative voltage applications|
| **Gate-source voltage (VGS)** | ±20V | Wide gate control range, flexible application|
| **Threshold voltage (Vth)** | 1.8V (N channel)
-1.7V (P channel) | Low threshold voltage ensures fast turn-on|
| **On-resistance (RDS(ON))** | 120mΩ@VGS=4.5V
100mΩ@VGS=10V | Low on-resistance reduces power consumption|
| **Continuous Drain Current (ID)** | ±4A | Suitable for medium current applications|
| **Technology** | Trench | Provides efficient switching performance and low power consumption|
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| **Parameter** | **Value** | **Description** |
|------------------------|----------------------------|-------------------------------------------|
| **Package** | SOT23-6 | Small surface mount package, suitable for space-constrained designs|
| **Configuration** | Dual N+P channel | Provides flexibility for positive and negative voltage applications|
| **Drain-source voltage (VDS)** | ±60V | Can be used for positive and negative voltage applications|
| **Gate-source voltage (VGS)** | ±20V | Wide gate control range, flexible application|
| **Threshold voltage (Vth)** | 1.8V (N channel)
-1.7V (P channel) | Low threshold voltage ensures fast turn-on|
| **On-resistance (RDS(ON))** | 120mΩ@VGS=4.5V
100mΩ@VGS=10V | Low on-resistance reduces power consumption|
| **Continuous Drain Current (ID)** | ±4A | Suitable for medium current applications|
| **Technology** | Trench | Provides efficient switching performance and low power consumption|
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Domain and module applications：
3. Application fields and module examples
1. **Switching power supply (SMPS)**
NDC7001C-VB can be used as an output switch in a **switching power supply** to manage the switching process of the power supply. Its low on-resistance (100mΩ) and high current capability (±4A) can effectively reduce switching losses and improve power conversion efficiency, making it suitable for high-efficiency power supply design.
2. **Audio amplifier**
In an **audio amplifier**, this dual MOSFET can be used for output stage driving to help achieve higher efficiency and lower distortion, and enhance the transmission effect of audio signals.
3. **Signal switch**
NDC7001C-VB can also be used in **signal switch** applications, such as switching different signal paths in a **multiplexer**. Its dual-channel configuration provides flexibility and high efficiency, making it suitable for a variety of communication equipment.
4. **Power Management Module**
In the **Power Management Module**, this MOSFET can effectively control the distribution of power, support fast switching and regulation of power, and improve the overall efficiency of the system.
5. **Power Tools and Home Appliances**
Suitable for **power tools** and **home appliances**, such as electric knives, vacuum cleaners, etc., NDC7001C-VB can be used for motor control and drive to ensure reliable operation under high load conditions.
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**Summary**: NDC7001C-VB is a powerful dual N+P channel MOSFET. With its **SOT23-6 package**, **low on-resistance** and **±4A current capability**, it provides efficient solutions in the fields of switching power supplies, audio amplifiers, signal switches and power management, and is widely used in a variety of electronic devices and applications.
1. **Switching power supply (SMPS)**
NDC7001C-VB can be used as an output switch in a **switching power supply** to manage the switching process of the power supply. Its low on-resistance (100mΩ) and high current capability (±4A) can effectively reduce switching losses and improve power conversion efficiency, making it suitable for high-efficiency power supply design.
2. **Audio amplifier**
In an **audio amplifier**, this dual MOSFET can be used for output stage driving to help achieve higher efficiency and lower distortion, and enhance the transmission effect of audio signals.
3. **Signal switch**
NDC7001C-VB can also be used in **signal switch** applications, such as switching different signal paths in a **multiplexer**. Its dual-channel configuration provides flexibility and high efficiency, making it suitable for a variety of communication equipment.
4. **Power Management Module**
In the **Power Management Module**, this MOSFET can effectively control the distribution of power, support fast switching and regulation of power, and improve the overall efficiency of the system.
5. **Power Tools and Home Appliances**
Suitable for **power tools** and **home appliances**, such as electric knives, vacuum cleaners, etc., NDC7001C-VB can be used for motor control and drive to ensure reliable operation under high load conditions.
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**Summary**: NDC7001C-VB is a powerful dual N+P channel MOSFET. With its **SOT23-6 package**, **low on-resistance** and **±4A current capability**, it provides efficient solutions in the fields of switching power supplies, audio amplifiers, signal switches and power management, and is widely used in a variety of electronic devices and applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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