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NDC652P-VB Product details
Back to previous pageProduct introduction：
NDC652P-VB is a single P-channel MOSFET in a SOT23-6 package, designed for high-efficiency switching and power management applications. Its maximum drain-source voltage (VDS) is **-30V**, and it supports **±20V gate-source voltage (VGS)**, making it suitable for a variety of low-voltage circuits. The device has a gate threshold voltage of **-1.7V**, achieving a low on-resistance (RDS(ON)) of **54mΩ and 49mΩ** at a gate voltage of 4.5V and 10V, respectively. Its maximum continuous drain current (ID) is **-4.8A**, making the NDC652P-VB perform well in power control and switching applications, and can effectively reduce energy losses.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
| Parameter | Value | Description |
|----------------|------------------------------------|--------------------------------|
| **Package** | SOT23-6 | Compact surface mount package|
| **Trench Configuration** | Single P-channel | Suitable for load switching and reverse current control|
| **VDS** | -30V | Maximum voltage between drain and source|
| **VGS** | ±20V | Maximum voltage between gate and source|
| **Vth** | -1.7V | Gate turn-on voltage|
| **RDS(ON)** | 54mΩ @ VGS=4.5V | On-resistance at low gate voltage|
| **RDS(ON)** | 49mΩ @ VGS=10V | On-resistance at high gate voltage|
| **ID** | -4.8A | Maximum continuous drain current|
| **Technology type** | Trench | Improve conductivity and reduce switching losses |
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Domain and module applications：
1. **Power management system**
NDC652P-VB is suitable for **DC-DC converter** and **switching power supply (SMPS)**, where it can be used for high-efficiency power conversion, reduce switching losses, and achieve excellent conversion efficiency.
2. **Motor drive**
In **motor control systems**, this MOSFET can be used as a load switch, which can quickly respond to current changes and maintain low conduction losses, thereby improving the efficiency and performance of the motor drive system, especially in brushless DC motor (BLDC) applications.
3. **Signal switch**
NDC652P-VB can be used for **signal switch** applications, supporting the switching of audio, video and data communication signals, with the advantages of low power consumption and high efficiency, ensuring the quality and stability of signal transmission.
4. **Battery Management System (BMS)**
This device is very suitable for **Li-ion battery management** and charging applications. It can effectively control the charging and discharging process, ensure the safety and efficiency of the battery, and extend the battery life.
5. **Portable devices**
NDC652P-VB is suitable for use in **smartphones, tablets** and other portable electronic devices due to its small package and excellent performance. It is used for power switching and power management, providing high efficiency and long battery life support.
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NDC652P-VB is a high-performance single P-channel MOSFET suitable for use in a variety of applications, especially in areas with high requirements for power management and current control. Its excellent electrical performance and compact design make it an ideal choice for modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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