NDC632P-VB Product details
Product introduction:
NDC632P-VB is a **single P-channel MOSFET**, designed with **SOT23-6** package, with the advantages of high efficiency and compactness. The maximum drain-source voltage (V_DS) of the device is **-30V**, the gate-source voltage (V_GS) range is ±20V, and the turn-on voltage (V_th) is **-1.7V**. Under the gate drive of 4.5V and 10V, its on-resistance (R_DS(ON)) is **54mΩ** and **49mΩ** respectively, and it can withstand a maximum drain current of **-4.8A**. Using **Trench technology**, this MOSFET has excellent switching characteristics and is widely used in power management and load switching circuits, suitable for use in small and portable devices.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | 49mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P | -30V | -1.7V | -4.8A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| SOT23-6 | Single-P |
| **Parameter** | **Value** | **Description** |
|--------------------------|-------------------------------|----------------------------|
| **Package Type** | SOT23-6 | Small and lightweight, suitable for high-density circuits|
| **Channel Configuration** | Single P-channel | Suitable for load switching and power management|
| **Drain-Source Voltage (V_DS)** | -30V | Suitable for negative voltage applications|
| **Gate-Source Voltage (V_GS)** | ±20V | Flexible drive voltage control|
| **Turning Voltage (V_th)** | -1.7V | Easy to trigger|
| **On-resistance (R_DS(ON))** | 54mΩ @ V_GS=4.5V | Efficient operation even at low voltage|
| | 49mΩ @ V_GS=10V | Better performance at higher drive voltages|
| **Maximum drain current (I_D)** | -4.8A | Suitable for small and medium loads|
| **Technology type** | Trench | Improved switching efficiency and reduced power consumption|
| **Operating temperature range** | -55°C ~ 150°C | Suitable for various temperature environments|
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Domain and module applications:
**1. Power Management and Load Switching**
NDC632P-VB is widely used in **power management** systems, and can effectively control the on and off of power. This makes it play an important role in the power switching of portable devices, the output switch of chargers and battery management systems, ensuring efficient use and protection of energy.
**2. LED Drive Circuit**
In LED lighting systems, NDC632P-VB can be used for load switching and dimming circuits. Due to its low on-resistance characteristics, the MOSFET can operate stably under different voltage conditions, ensuring high brightness and low energy consumption of LED lamps under different working conditions.
**3. Small Home Appliances and Consumer Electronics**
In various small home appliances (such as fans, heaters and household appliances), NDC632P-VB is used as a switching element to effectively control the load and improve the working efficiency of the equipment. In consumer electronics such as mobile phone chargers and portable power banks, it can reduce power consumption and improve battery efficiency.
**4. Electric toys and models**
This MOSFET is also suitable for **electric toys** and remote control models, which can control the start, stop and speed of the motor. Its compact package design allows it to be easily integrated into space-constrained devices while providing reliable performance.
**5. Automotive electronics and smart devices**
In automotive electronics and smart devices, NDC632P-VB can be used for power switching and motor control to ensure stability and reliability at peak loads. With the development of smart car technology, this MOSFET can meet the growing demand for high efficiency and high reliability.
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With its excellent performance and compact package, NDC632P-VB has shown a wide range of application prospects in power management, consumer electronics and many other fields. Its efficient Trench technology ensures the stability and efficiency of the device under various working conditions.
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