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NDB7052L-VB Product details

Product introduction:

1. NDB7052L-VB Product Introduction
NDB7052L-VB is a **single N-channel MOSFET** in **TO263 package**, designed for high power and high efficiency current control applications. The device has a **drain-source voltage (VDS)** of **60V**, a gate voltage (VGS) range of ±20V, and a threshold voltage (Vth) of 3V, ensuring fast turn-on at a lower gate voltage. At **VGS=10V**, its **on-resistance (RDS(ON))** is only **4mΩ**, supporting a maximum continuous current of **150A**. This MOSFET uses **Trench technology**, providing superior conduction performance and low power consumption, and is very suitable for switching power supplies, DC motor drives and other high-efficiency power management systems.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO263 Single-N 60V 3V 150A 4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO263 Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO263 Single-N 60V 3V 150A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO263 Single-N
2. NDB7052L-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|------------------------|-------------------------|------------------------------------------|
| **Package** | TO263 | Surface mount package, suitable for compact design|
| **Configuration** | Single N-channel | Optimized current control and switching characteristics|
| **Drain-source voltage (VDS)** | 60V | Suitable for medium voltage power management|
| **Gate-source voltage (VGS)** | ±20V | Wide gate control range, flexible application|
| **Threshold voltage (Vth)** | 3V | Low threshold voltage ensures fast turn-on|
| **On-resistance (RDS(ON))** | 4mΩ@VGS=10V | Very low on-resistance reduces power consumption|
| **Continuous drain current (ID)** | 150A | For high current applications |
| **Technology** | Trench | Provides efficient switching performance and low power consumption |

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Domain and module applications:

3. Application fields and module examples

1. **Switching power supply (SMPS)**
NDB7052L-VB is very suitable for **switching power supply** as the main switching element. Its low on-resistance (4mΩ) and high current capability (150A) can effectively reduce switching losses and improve the overall power conversion efficiency, suitable for high-efficiency power supply design.

2. **DC motor drive**
In **DC motor control system**, this MOSFET can be used as a switching device in the motor drive circuit. Its high current carrying capacity ensures stable operation of the motor under high load while reducing heat loss.

3. **Battery management system (BMS)**
NDB7052L-VB can be used in **battery management system** to manage the charging and discharging process of the battery, ensure safe and efficient power transmission, and improve the charging and discharging efficiency of the battery through low on-resistance.

4. **Power amplifier and RF applications**
In **RF (Radio Frequency) applications** and **Power amplifier**, this MOSFET can provide fast switching response and efficient power transmission, suitable for various wireless communication devices and signal processors.

5. **Automotive electronic systems**
This MOSFET is suitable for **power management modules** in **automotive electronics**, such as power windows, power seats and various electronic control units, and can provide stable current and high efficiency under high load conditions.

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**Summary**: NDB7052L-VB is a high-performance N-channel MOSFET. With its **TO263 package**, **low on-resistance** and **high current capability**, it is suitable for a wide range of power management fields, including switching power supplies, DC motor drives, battery management and automotive electronics applications, providing superior performance and efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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