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NDB6060L-VB Product details
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NDB6060L-VB is a single N-channel MOSFET in TO263 package, designed for high-efficiency switching and driving applications. It supports **60V drain-source voltage (VDS)** and **±20V gate-source voltage (VGS)**, and uses **trench technology** to achieve excellent conduction performance and low RDS(ON) impedance. This MOSFET can withstand up to **75A continuous current (ID)**, while achieving **12mΩ and 11mΩ** on-resistance at 4.5V and 10V gate drive, respectively. With its excellent low resistance and high current capability, NDB6060L-VB excels in high power conversion and low loss switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | 11mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 1.7V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
| Parameter | Value | Description |
|----------------|-------------------------------------|--------------------------------|
| **Package** | TO263 | Surface mount package for compact design|
| **Channel Type** | Single N-channel | Suitable for high-speed switching and driving circuits|
| **VDS** | 60V | Maximum voltage between drain and source|
| **VGS** | ±20V | Maximum voltage between gate and source|
| **Vth** | 1.7V | Gate turn-on voltage|
| **RDS(ON)** | 12mΩ @ VGS=4.5V | On-resistance at low gate voltage|
| **RDS(ON)** | 11mΩ @ VGS=10V | On-resistance at high gate voltage|
| **ID** | 75A | Continuous drain current|
| **Technology Type** | Trench | Improve conductivity and reduce switching losses |
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Domain and module applications：
1. **Power Management Modules**
The NDB6060L-VB is commonly used in **DC-DC converters** and **switching power supply (SMPS)** systems. These systems require MOSFETs that can switch quickly and carry high currents to improve conversion efficiency and reduce power consumption.
2. **Motor Drive and Control Systems**
The high current capability and low RDS(ON) of this MOSFET make it suitable for use in **electric vehicle (EV) motor drives** and **brushless DC motor (BLDC)** control systems. In these applications, it can reduce heat loss and improve the energy efficiency of the overall system.
3. **Load Switches and Distributed Power Systems**
In power management systems for servers and data centers, the NDB6060L-VB can be used as a **load switch** to ensure efficient distribution of power. Its high performance characteristics can also meet the requirements of **distributed power systems** for response speed and low power consumption.
4. **Battery Management System (BMS)**
This device is suitable for **Li-ion battery management systems**, helping to manage current path control during charging and discharging. Due to its low on-resistance, this MOSFET has extremely low power losses inside the battery pack, helping to extend battery life.
5. **Photovoltaic Inverters and Energy Storage Systems**
The NDB6060L-VB excels in **solar inverters** and home energy storage devices. It can switch quickly with low losses in high power environments, thereby improving the conversion efficiency of the system.
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The NDB6060L-VB is a highly reliable, low-loss N-channel MOSFET that is particularly suitable for modules that require high current and high efficiency. Its performance characteristics have led to its widespread use in consumer electronics, power management and industrial automation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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