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NDB6030PL-VB Product details
Back to previous pageProduct introduction：
1. NDB6030PL-VB Product Introduction
NDB6030PL-VB is a **Single-P-Channel** MOSFET in a **TO263 package**, designed for high-efficiency power management applications. Its **drain-source voltage (V\(_{DS}\))** is **-30V**, and supports **±20V** gate-source voltage (V\(_{GS}\)), making it suitable for a variety of drive circuits. **The threshold voltage (V\(_{th}\))** is **-2.5V**, which can achieve good switching performance even at lower gate voltages. The device has an **8mΩ** on-resistance (R\(_{DS(ON)}\))** at **V\(_{GS}\)=10V** and **11mΩ** at **V\(_{GS}\)=4.5V**, ensuring low conduction losses. The maximum drain current (I\(_{D}\)) reaches **-75A**, which is very suitable for high current and low voltage applications. NDB6030PL-VB adopts **Trench technology**, has efficient switching characteristics, and is widely used in DC-DC conversion, battery management and power control systems.
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NDB6030PL-VB is a **Single-P-Channel** MOSFET in a **TO263 package**, designed for high-efficiency power management applications. Its **drain-source voltage (V\(_{DS}\))** is **-30V**, and supports **±20V** gate-source voltage (V\(_{GS}\)), making it suitable for a variety of drive circuits. **The threshold voltage (V\(_{th}\))** is **-2.5V**, which can achieve good switching performance even at lower gate voltages. The device has an **8mΩ** on-resistance (R\(_{DS(ON)}\))** at **V\(_{GS}\)=10V** and **11mΩ** at **V\(_{GS}\)=4.5V**, ensuring low conduction losses. The maximum drain current (I\(_{D}\)) reaches **-75A**, which is very suitable for high current and low voltage applications. NDB6030PL-VB adopts **Trench technology**, has efficient switching characteristics, and is widely used in DC-DC conversion, battery management and power control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | 8mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-P | -30V | -2.5V | -75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-P |
II. Detailed parameter description of NDB6030PL-VB
| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TO263 | High power package for surface mount|
| **Channel type** | Single-P-Channel | Single P-channel, suitable for power management applications|
| **V\(_{DS}\)** | -30V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±20V | Gate-source voltage range|
| **V\(_{th}\)** | -2.5V | Threshold voltage for turn-on|
| **R\(_{DS(ON)}\)** | 11mΩ (V\(_{GS}\)=4.5V) | On-resistance at low gate voltage|
| | 8mΩ (V\(_{GS}\)=10V) | On-resistance at high gate voltage|
| **I\(_{D}\)** | -75A | Maximum continuous drain current|
| **Technology** | Trench | Deep trench technology for improved switching efficiency|
| **Operating temperature range** | -55°C to 150°C | Wide operating temperature range for harsh environments|
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| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TO263 | High power package for surface mount|
| **Channel type** | Single-P-Channel | Single P-channel, suitable for power management applications|
| **V\(_{DS}\)** | -30V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±20V | Gate-source voltage range|
| **V\(_{th}\)** | -2.5V | Threshold voltage for turn-on|
| **R\(_{DS(ON)}\)** | 11mΩ (V\(_{GS}\)=4.5V) | On-resistance at low gate voltage|
| | 8mΩ (V\(_{GS}\)=10V) | On-resistance at high gate voltage|
| **I\(_{D}\)** | -75A | Maximum continuous drain current|
| **Technology** | Trench | Deep trench technology for improved switching efficiency|
| **Operating temperature range** | -55°C to 150°C | Wide operating temperature range for harsh environments|
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Domain and module applications：
III. Application fields and module examples
1. **Battery Management System (BMS)**
NDB6030PL-VB is suitable for **battery protection and management systems**, especially in lithium battery packs, which can control the charge and discharge paths, prevent overcharge or overdischarge of batteries, and improve the service life and safety of battery packs.
2. **DC-DC Converter**
In **DC-DC Buck Converter**, this P-channel MOSFET is used for switch and power path control, reducing losses and improving power efficiency, and is suitable for power management of laptops, mobile devices and other portable devices.
3. **Reverse Polarity Protection Circuit**
In circuits that require **current reverse flow prevention**, this device provides reverse polarity protection to ensure that sensitive components are not damaged by incorrect connections. It is often used in power adapters and industrial control systems.
4. **Power Tools and Motor Drives**
NDB6030PL-VB can achieve fast power switching and motor control in **power tools**, ensuring that the equipment responds quickly and operates efficiently.
5. **Solar Systems**
In **solar charge controllers**, this MOSFET can be used in switch control modules to prevent reverse energy flow, ensure stable operation of photovoltaic systems, and improve power generation efficiency.
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NDB6030PL-VB excels in power management, battery systems, DC conversion, and reverse protection with its excellent conduction performance and high current handling capability. Its Trench technology ensures low conduction losses and fast switching speeds, making it an ideal choice for efficient power electronic devices.
1. **Battery Management System (BMS)**
NDB6030PL-VB is suitable for **battery protection and management systems**, especially in lithium battery packs, which can control the charge and discharge paths, prevent overcharge or overdischarge of batteries, and improve the service life and safety of battery packs.
2. **DC-DC Converter**
In **DC-DC Buck Converter**, this P-channel MOSFET is used for switch and power path control, reducing losses and improving power efficiency, and is suitable for power management of laptops, mobile devices and other portable devices.
3. **Reverse Polarity Protection Circuit**
In circuits that require **current reverse flow prevention**, this device provides reverse polarity protection to ensure that sensitive components are not damaged by incorrect connections. It is often used in power adapters and industrial control systems.
4. **Power Tools and Motor Drives**
NDB6030PL-VB can achieve fast power switching and motor control in **power tools**, ensuring that the equipment responds quickly and operates efficiently.
5. **Solar Systems**
In **solar charge controllers**, this MOSFET can be used in switch control modules to prevent reverse energy flow, ensure stable operation of photovoltaic systems, and improve power generation efficiency.
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NDB6030PL-VB excels in power management, battery systems, DC conversion, and reverse protection with its excellent conduction performance and high current handling capability. Its Trench technology ensures low conduction losses and fast switching speeds, making it an ideal choice for efficient power electronic devices.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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