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NCEP85T25D-VB Product details
Back to previous pageProduct introduction：
1. NCEP85T25D-VB Product Introduction
NCEP85T25D-VB is a **single-N-channel** MOSFET in **TO263 package**, with excellent conduction performance and high current handling capability. Its **drain-source voltage (V\(_{DS}\))** is as high as **80V**, and the gate-source voltage range is **±20V**. The **threshold voltage (V\(_{th}\))** of this device is **3V**, which is suitable for low gate voltage drive. Its **on-resistance (R\(_{DS(ON)}\))** is only **3.1mΩ** when **V\(_{GS}\)=10V**, showing excellent low loss characteristics. The maximum continuous **drain current (I\(_D\))** can reach **230A**, which is very suitable for high-efficiency switching applications that need to handle high currents. The NCEP85T25D-VB uses **Trench technology** to optimize switching losses and conduction losses, making it an ideal choice for power management and high-efficiency drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 230A | 3.1mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 230A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 230A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. NCEP85T25D-VB Detailed parameter description
| **Parameter** | **Value** | **Description** |
|---------------------|------------------------------|--------------------------------------|
| **Package** | TO263 | High power package for surface mount|
| **Channel type** | Single-N-Channel | Single N-channel, suitable for switching applications|
| **V\(_{DS}\)** | 80V | Maximum drain-source voltage|
| **V\(_{GS}\)** | ±20V | Gate-source voltage range|
| **V\(_{th}\)** | 3V | Threshold voltage for turn-on state|
| **R\(_{DS(ON)}\)** | 3.1mΩ (V\(_{GS}\)=10V) | On-resistance at higher gate voltage|
| **I\(_D\)** | 230A | Maximum continuous drain current|
| **Technology** | Trench | Deep trench technology for faster switching and better power efficiency|
| **Operating temperature range** | -55°C to 150°C | Wide operating temperature range for a variety of environments|
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Domain and module applications：
III. Application fields and module examples
1. **Electric vehicle charging system**
NCEP85T25D-VB is suitable for power management modules in **Electric vehicle (EV) charging systems**, providing high current and low loss switching capabilities to ensure maximum charging efficiency and shorten charging time.
2. **Solar inverter**
In **Photovoltaic systems**, this device can be used as the main switching element of the inverter to handle high current input, convert DC to AC, and improve overall system efficiency.
3. **Motor drive control**
In **Industrial motor drive**, this MOSFET can be used for variable frequency drive (VFD) and DC motor control, providing fast response and low loss current control for high power devices.
4. **Server power management**
In the data center and server field, this MOSFET can be used in the buck converter in the **Server power module** to help manage high power loads, improve energy efficiency, and reduce energy consumption.
5. **Household appliances**
NCEP85T25D-VB is suitable for **high-efficiency home appliance control** (such as air conditioners and washing machines), providing high-efficiency switching with high current to ensure stable operation and extend the service life of the equipment.
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NCEP85T25D-VB is an ideal switching element for high-efficiency power systems, automobiles and industrial equipment with its high current capability, low conduction loss and excellent reliability. This device can maintain excellent performance in a variety of harsh environments and is an ideal choice for optimizing energy consumption and improving system efficiency.
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