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NCEP85T12D-VB Product details
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1. NCEP85T12D-VB Product Introduction
NCEP85T12D-VB is a high-performance **single N-channel MOSFET** in **TO263 package**, designed for high current and high efficiency application scenarios. Its **drain-source voltage (VDS)** is **80V**, **gate voltage (VGS)** range is ±20V, and it has excellent switching speed and low conduction loss. The threshold voltage (Vth) of the device is **3V**, and the **on-resistance (RDS(ON))** is as low as **5mΩ** at **VGS=10V**, ensuring the minimization of power loss while supporting a continuous drain current (ID) of up to **215A**. With **Trench technology**, NCEP85T12D-VB provides lower on-resistance and excellent thermal performance, and is particularly suitable for high-power applications such as efficient power conversion and electric vehicles.
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NCEP85T12D-VB is a high-performance **single N-channel MOSFET** in **TO263 package**, designed for high current and high efficiency application scenarios. Its **drain-source voltage (VDS)** is **80V**, **gate voltage (VGS)** range is ±20V, and it has excellent switching speed and low conduction loss. The threshold voltage (Vth) of the device is **3V**, and the **on-resistance (RDS(ON))** is as low as **5mΩ** at **VGS=10V**, ensuring the minimization of power loss while supporting a continuous drain current (ID) of up to **215A**. With **Trench technology**, NCEP85T12D-VB provides lower on-resistance and excellent thermal performance, and is particularly suitable for high-power applications such as efficient power conversion and electric vehicles.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | 5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 80V | 3V | 215A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
2. NCEP85T12D-VB Detailed Parameter Description
| **Parameter** | **Value** | **Description** |
|------------------------|-------------------------|------------------------------------------|
| **Package** | TO263 | Surface mount package for high power and space constrained designs|
| **Configuration** | Single N-channel | Suitable for efficient current control applications|
| **Drain-source voltage (VDS)** | 80V | Supports a variety of medium voltage application scenarios|
| **Gate-source voltage (VGS)** | ±20V | Wide gate drive range, supporting flexible control|
| **Threshold voltage (Vth)** | 3V | Ensures fast turn-on at low gate voltage|
| **On-resistance (RDS(ON))** | 5mΩ@VGS=10V | Very low resistance, reduced conduction loss|
| | 10mΩ@VGS=4.5V | Maintains good conduction performance at low gate voltage |
| **Continuous drain current (ID)** | 215A | Supports high current loads for demanding applications |
| **Technology** | Trench | Reduces power consumption and improves switching efficiency through trench technology |
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| **Parameter** | **Value** | **Description** |
|------------------------|-------------------------|------------------------------------------|
| **Package** | TO263 | Surface mount package for high power and space constrained designs|
| **Configuration** | Single N-channel | Suitable for efficient current control applications|
| **Drain-source voltage (VDS)** | 80V | Supports a variety of medium voltage application scenarios|
| **Gate-source voltage (VGS)** | ±20V | Wide gate drive range, supporting flexible control|
| **Threshold voltage (Vth)** | 3V | Ensures fast turn-on at low gate voltage|
| **On-resistance (RDS(ON))** | 5mΩ@VGS=10V | Very low resistance, reduced conduction loss|
| | 10mΩ@VGS=4.5V | Maintains good conduction performance at low gate voltage |
| **Continuous drain current (ID)** | 215A | Supports high current loads for demanding applications |
| **Technology** | Trench | Reduces power consumption and improves switching efficiency through trench technology |
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Domain and module applications：
III. Application fields and module examples
1. **Electric vehicle (EV) drive system**
NCEP85T12D-VB is very suitable for **EV drive and control modules**, such as motor drivers and battery management systems. Its high current carrying capacity (215A) can provide sufficient current support for the power system of electric vehicles to ensure efficient operation of the system.
2. **High-efficiency power management system**
In power modules, this MOSFET can be used in **DC-DC converters**, **battery chargers** and **power adapters**, providing low conduction losses and high switching speeds, significantly improving system efficiency.
3. **Industrial control and automation equipment**
NCEP85T12D-VB is suitable for **industrial motor control systems** and **automation equipment**, providing stable current support in scenarios where large current is required to drive loads, ensuring reliable operation of the equipment.
4. **High-power household appliances**
In high-power household appliances such as air conditioners and refrigerators, this MOSFET can provide stable, low-loss current support for internal power conversion and motor drive circuits to improve energy efficiency.
5. **Battery Energy Storage System (BESS)**
In **Energy Storage System**, NCEP85T12D-VB can be used for energy management and voltage conversion modules of battery packs to help optimize energy flow, extend battery life and improve system efficiency.
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**Summary**: NCEP85T12D-VB is a high-performance N-channel MOSFET. With its excellent electrical performance and strong current carrying capacity, it is widely used in electric vehicles, industrial automation and efficient power management. It is an indispensable key component in modern electronic design.
1. **Electric vehicle (EV) drive system**
NCEP85T12D-VB is very suitable for **EV drive and control modules**, such as motor drivers and battery management systems. Its high current carrying capacity (215A) can provide sufficient current support for the power system of electric vehicles to ensure efficient operation of the system.
2. **High-efficiency power management system**
In power modules, this MOSFET can be used in **DC-DC converters**, **battery chargers** and **power adapters**, providing low conduction losses and high switching speeds, significantly improving system efficiency.
3. **Industrial control and automation equipment**
NCEP85T12D-VB is suitable for **industrial motor control systems** and **automation equipment**, providing stable current support in scenarios where large current is required to drive loads, ensuring reliable operation of the equipment.
4. **High-power household appliances**
In high-power household appliances such as air conditioners and refrigerators, this MOSFET can provide stable, low-loss current support for internal power conversion and motor drive circuits to improve energy efficiency.
5. **Battery Energy Storage System (BESS)**
In **Energy Storage System**, NCEP85T12D-VB can be used for energy management and voltage conversion modules of battery packs to help optimize energy flow, extend battery life and improve system efficiency.
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**Summary**: NCEP85T12D-VB is a high-performance N-channel MOSFET. With its excellent electrical performance and strong current carrying capacity, it is widely used in electric vehicles, industrial automation and efficient power management. It is an indispensable key component in modern electronic design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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