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NCEP60T20D-VB Product details
Back to previous pageProduct introduction：
1. NCEP60T20D-VB Product Introduction
NCEP60T20D-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for high power and high efficiency applications. Its maximum drain-source voltage (VDS) is 60V, which is suitable for a variety of medium and low voltage power supply applications. The threshold voltage (Vth) of the device is 3V, which enables it to turn on quickly at a lower gate voltage, thereby improving switching efficiency. At a gate voltage of 10V, the on-resistance (RDS(ON)) of NCEP60T20D-VB is only 2.5mΩ, ensuring extremely low conduction losses, suitable for applications with extremely high efficiency requirements. In addition, the maximum continuous drain current (ID) of the device can reach 270A, which can meet various applications with high current requirements.
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NCEP60T20D-VB is a high-efficiency single N-channel MOSFET in TO263 package, designed for high power and high efficiency applications. Its maximum drain-source voltage (VDS) is 60V, which is suitable for a variety of medium and low voltage power supply applications. The threshold voltage (Vth) of the device is 3V, which enables it to turn on quickly at a lower gate voltage, thereby improving switching efficiency. At a gate voltage of 10V, the on-resistance (RDS(ON)) of NCEP60T20D-VB is only 2.5mΩ, ensuring extremely low conduction losses, suitable for applications with extremely high efficiency requirements. In addition, the maximum continuous drain current (ID) of the device can reach 270A, which can meet various applications with high current requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | 2.5mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 60V | 3V | 270A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
II. NCEP60T20D-VB Parameter Description
| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------------|--------------------------------------------|
| **Package Type** | TO263 | Suitable for high power applications with heat dissipation requirements. |
| **Configuration** | Single N-channel | Common configuration, suitable for a variety of power management and switching applications. |
| **Drain-Source Voltage (VDS)** | 60V | Suitable for medium and low voltage power supply applications, ensuring stability and reliability. |
| **Gate Drive Voltage (VGS)** | ±20V | Provides a flexible control range for a variety of drive requirements. |
| **Threshold Voltage (Vth)** | 3V | Low threshold voltage ensures fast turn-on, suitable for high frequency applications. |
| **On-Resistance (RDS(ON))** | 7mΩ @ VGS=4.5V | Reduces conduction losses and improves energy efficiency. |
| **On-resistance (RDS(ON))** | 2.5mΩ @ VGS=10V | Reduce conduction loss and improve energy efficiency. |
| **Maximum drain current (ID)** | 270A | Suitable for high current applications and can meet high power requirements. |
| **Technology** | Trench | Improve device performance, reduce switching loss and on-resistance. |
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| **Parameter** | **Value** | **Description** |
|-------------------------|----------------------------------|--------------------------------------------|
| **Package Type** | TO263 | Suitable for high power applications with heat dissipation requirements. |
| **Configuration** | Single N-channel | Common configuration, suitable for a variety of power management and switching applications. |
| **Drain-Source Voltage (VDS)** | 60V | Suitable for medium and low voltage power supply applications, ensuring stability and reliability. |
| **Gate Drive Voltage (VGS)** | ±20V | Provides a flexible control range for a variety of drive requirements. |
| **Threshold Voltage (Vth)** | 3V | Low threshold voltage ensures fast turn-on, suitable for high frequency applications. |
| **On-Resistance (RDS(ON))** | 7mΩ @ VGS=4.5V | Reduces conduction losses and improves energy efficiency. |
| **On-resistance (RDS(ON))** | 2.5mΩ @ VGS=10V | Reduce conduction loss and improve energy efficiency. |
| **Maximum drain current (ID)** | 270A | Suitable for high current applications and can meet high power requirements. |
| **Technology** | Trench | Improve device performance, reduce switching loss and on-resistance. |
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Domain and module applications：
III. Application fields and module examples
1. **Power management**
NCEP60T20D-VB performs well in power management applications, especially for switch mode power supplies (SMPS). Due to its low on-resistance and high current carrying capacity, it can effectively reduce energy loss in the power conversion process. It is widely used in power adapters, server power supplies and industrial power supplies, providing high efficiency and low heat power solutions.
2. **Motor drive**
This MOSFET is suitable for motor drive modules, especially in DC motor and stepper motor drives. With its fast switching speed and high current capability, NCEP60T20D-VB can meet the needs of high efficiency and fast response in fields such as industrial automation, home appliances and power tools.
3. **Battery management system (BMS)**
In the battery management system, NCEP60T20D-VB can effectively control the charging and discharging process to ensure the safety and efficient operation of the battery. Its high current capability is particularly suitable for battery management in electric vehicles, energy storage systems and portable electronic devices, ensuring stable current output.
4. **High-frequency switching power supply**
Due to its fast switching characteristics, NCEP60T20D-VB is an ideal choice for high-frequency switching power supplies, which are widely used in communication equipment and computer power supplies to improve the power density and conversion efficiency of the system.
5. **LED driver**
This device can also be used in LED driver circuits, especially in lighting solutions that require high efficiency and miniaturization. Its low on-resistance and high efficiency make it an excellent performer in LED lighting and backlight applications, which can reduce energy consumption and improve overall system performance.
In summary, NCEP60T20D-VB is a high-efficiency, high-power MOSFET that can meet the diverse needs of modern electronic products in power management, motor drive and other high-efficiency applications.
1. **Power management**
NCEP60T20D-VB performs well in power management applications, especially for switch mode power supplies (SMPS). Due to its low on-resistance and high current carrying capacity, it can effectively reduce energy loss in the power conversion process. It is widely used in power adapters, server power supplies and industrial power supplies, providing high efficiency and low heat power solutions.
2. **Motor drive**
This MOSFET is suitable for motor drive modules, especially in DC motor and stepper motor drives. With its fast switching speed and high current capability, NCEP60T20D-VB can meet the needs of high efficiency and fast response in fields such as industrial automation, home appliances and power tools.
3. **Battery management system (BMS)**
In the battery management system, NCEP60T20D-VB can effectively control the charging and discharging process to ensure the safety and efficient operation of the battery. Its high current capability is particularly suitable for battery management in electric vehicles, energy storage systems and portable electronic devices, ensuring stable current output.
4. **High-frequency switching power supply**
Due to its fast switching characteristics, NCEP60T20D-VB is an ideal choice for high-frequency switching power supplies, which are widely used in communication equipment and computer power supplies to improve the power density and conversion efficiency of the system.
5. **LED driver**
This device can also be used in LED driver circuits, especially in lighting solutions that require high efficiency and miniaturization. Its low on-resistance and high efficiency make it an excellent performer in LED lighting and backlight applications, which can reduce energy consumption and improve overall system performance.
In summary, NCEP60T20D-VB is a high-efficiency, high-power MOSFET that can meet the diverse needs of modern electronic products in power management, motor drive and other high-efficiency applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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