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NCEP40T11K-VB Product details
Back to previous pageProduct introduction：
1. NCEP40T11K-VB Product Introduction
NCEP40T11K-VB is a high-performance single N-channel power MOSFET in TO-252 package, designed for high efficiency and high current applications. It has a drain-source voltage (V\(_{DS}\)) of 40V and a gate voltage tolerance of ±20V, suitable for operation over a wide voltage range. This MOSFET adopts **Trench technology**, and its low on-resistance can reach 1.6mΩ@V\(_{GS}\)=10V, ensuring its excellent performance in high-frequency switching applications. The maximum drain current is 120A, which makes it perform well in a variety of high-load applications. NCEP40T11K-VB is an ideal choice for power management, drive control and other high-power electronic devices, and can provide reliable performance in complex working environments.
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NCEP40T11K-VB is a high-performance single N-channel power MOSFET in TO-252 package, designed for high efficiency and high current applications. It has a drain-source voltage (V\(_{DS}\)) of 40V and a gate voltage tolerance of ±20V, suitable for operation over a wide voltage range. This MOSFET adopts **Trench technology**, and its low on-resistance can reach 1.6mΩ@V\(_{GS}\)=10V, ensuring its excellent performance in high-frequency switching applications. The maximum drain current is 120A, which makes it perform well in a variety of high-load applications. NCEP40T11K-VB is an ideal choice for power management, drive control and other high-power electronic devices, and can provide reliable performance in complex working environments.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | 1.6mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO252 | Single-N | 40V | 3V | 120A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO252 | Single-N |
2. NCEP40T11K-VB Detailed parameter description
| Parameter | Value | Description|
|---------------------|--------------------------------|--------------------------------|
| **Package** | TO-252 | Provides good heat dissipation performance, suitable for high power applications|
| **Configuration** | Single N-channel | Single N-channel MOSFET |
| **Drain-source voltage (V\(_{DS}\))** | 40V | Supports medium voltage applications|
| **Gate-source voltage (V\(_{GS}\))** | ±20V | Gate voltage tolerance range|
| **Turning voltage (V\(_{th}\))** | 3V | Turn-on threshold of gate drive voltage|
| **On-resistance (R\(_{DS(on)}\))** | 3mΩ @ V\(_{GS}\)=4.5V | On-state impedance affects efficiency and heat dissipation|
| **On-resistance (R\(_{DS(on)}\))** | 1.6mΩ @ V\(_{GS}\)=10V | On-state impedance ensures high performance|
| **Drain current (I\(_{D}\))** | 120A | Maximum continuous current|
| **Technology** | Trench | Trench structure improves switching efficiency|
| **Operating temperature** | -55°C ~ 150°C | Suitable for wide temperature range applications|
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| Parameter | Value | Description|
|---------------------|--------------------------------|--------------------------------|
| **Package** | TO-252 | Provides good heat dissipation performance, suitable for high power applications|
| **Configuration** | Single N-channel | Single N-channel MOSFET |
| **Drain-source voltage (V\(_{DS}\))** | 40V | Supports medium voltage applications|
| **Gate-source voltage (V\(_{GS}\))** | ±20V | Gate voltage tolerance range|
| **Turning voltage (V\(_{th}\))** | 3V | Turn-on threshold of gate drive voltage|
| **On-resistance (R\(_{DS(on)}\))** | 3mΩ @ V\(_{GS}\)=4.5V | On-state impedance affects efficiency and heat dissipation|
| **On-resistance (R\(_{DS(on)}\))** | 1.6mΩ @ V\(_{GS}\)=10V | On-state impedance ensures high performance|
| **Drain current (I\(_{D}\))** | 120A | Maximum continuous current|
| **Technology** | Trench | Trench structure improves switching efficiency|
| **Operating temperature** | -55°C ~ 150°C | Suitable for wide temperature range applications|
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Domain and module applications：
3. NCEP40T11K-VB Applications and Module Examples
1. **Power Management System**
NCEP40T11K-VB is ideal for switching power supply designs such as DC-DC converters and AC-DC adapters. Its extremely low on-resistance helps reduce switching losses and improve system efficiency, making it an ideal choice for efficient power management solutions.
2. **Motor Drive**
This MOSFET also performs well in the field of motor drive control and is suitable for applications such as industrial automation, home appliances and power tools. Its high current handling capability can effectively drive various types of motors and achieve efficient control.
3. **LED Lighting Drive**
NCEP40T11K-VB is suitable for driving circuits for LED lighting and can provide stable current for high-power LEDs. Whether in commercial lighting or outdoor lighting, its fast switching characteristics and high efficiency ensure the brightness and life of the LED.
4. **Renewable energy systems**
In photovoltaic inverters and wind power generation systems, NCEP40T11K-VB can effectively handle high voltage and high current, ensure efficient conversion and stable output of electric energy, and is suitable for renewable energy applications to promote sustainable development.
5. **Automotive electronics**
This MOSFET is also suitable for automotive electronic systems. It can be used in electric power steering and power management modules to provide efficient power control and management to meet the requirements of modern automobiles for high performance and high reliability.
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NCEP40T11K-VB has become the preferred component of modern high-efficiency electronic devices with its excellent electrical characteristics and high power handling capabilities. It can be widely used in a variety of fields and modules to meet the needs of high performance and high reliability.
1. **Power Management System**
NCEP40T11K-VB is ideal for switching power supply designs such as DC-DC converters and AC-DC adapters. Its extremely low on-resistance helps reduce switching losses and improve system efficiency, making it an ideal choice for efficient power management solutions.
2. **Motor Drive**
This MOSFET also performs well in the field of motor drive control and is suitable for applications such as industrial automation, home appliances and power tools. Its high current handling capability can effectively drive various types of motors and achieve efficient control.
3. **LED Lighting Drive**
NCEP40T11K-VB is suitable for driving circuits for LED lighting and can provide stable current for high-power LEDs. Whether in commercial lighting or outdoor lighting, its fast switching characteristics and high efficiency ensure the brightness and life of the LED.
4. **Renewable energy systems**
In photovoltaic inverters and wind power generation systems, NCEP40T11K-VB can effectively handle high voltage and high current, ensure efficient conversion and stable output of electric energy, and is suitable for renewable energy applications to promote sustainable development.
5. **Automotive electronics**
This MOSFET is also suitable for automotive electronic systems. It can be used in electric power steering and power management modules to provide efficient power control and management to meet the requirements of modern automobiles for high performance and high reliability.
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NCEP40T11K-VB has become the preferred component of modern high-efficiency electronic devices with its excellent electrical characteristics and high power handling capabilities. It can be widely used in a variety of fields and modules to meet the needs of high performance and high reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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